-
The spin-orbit torque generated by charge current in a strong spin-orbit coupling material provides a fast and efficient way to manipulate the magnetic moment in adjacent magnetic layers, which is expected to be used for developing low-power, high-performance spintronic devices. Two-dimensional materials have attracted great attention, for example, they have abundant species, a variety of crystal structures and symmetries, good adjustability of spin-orbit coupling strength and conductivity, and good ability to overcome the lattice mismatch to form high-quality heterojunctions, thereby providing a unique platform for studying the spin-orbit torques. This paper covers the latest research progress of spin-orbital torques in two-dimensional materials and their heterostructures, including their generations, characteristics, and magnetization manipulations in the heterostructures based on non-magnetic two-dimensional materials (such as MoS 2, WSe 2, WS 2, WTe 2, TaTe 2, MoTe 2, NbSe 2, PtTe 2, TaS 2, etc.) and magnetic two-dimensional materials (such as Fe 3GeTe 2, Cr 2Ge 2Te 6, etc.). Finally, some problems remaining to be solved and challenges are pointed out, and the possible research directions and potential applications of two-dimensional material spin-orbit torque are also proposed.
-
Keywords:
- two-dimensional materials/
- spin-orbit coupling/
- spin-orbit torque/
- current-driven magnetization switching
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] [74] [75] [76] [77] [78] [79] [80] [81] [82] [83] [84] [85] [86] [87] [88] [89] [90] [91] [92] [93] [94] [95] [96] [97] [98] [99] [100] [101] [102] [103] [104] [105] [106] [107] [108] [109] [110] -
TMD材料 空间群 制备方法 表征方法 自旋霍尔电导$/[{10}^{3}({\hbar /2{\rm{e}}} )$ (Ω·m)–1] 文献 MoS2 P6/mmc CVD SHH $ {\sigma }_{\rm{A}}= $ 2.9 [60] WSe2 P6/mmc CVD SHH $ {\sigma }_{\rm{A}}= $ 5.5 [60] WS2 P6/mmc CVD SHH $ {\sigma }_{\rm{A}}, {\sigma }_{\rm{S}} $ observed [61] WTe2 Pmn21 Exfoliation ST-FMR/SHH $ {\sigma }_{\rm{A}}= $ 9 ± 3, $ {\sigma }_{\rm{S}}= $ 8 ± 2, $ {\sigma }_{\rm{B}}= $ 3.6 ± 0.8 [58] WTe2 Pmn21 Exfoliation ST-FMR/SHH $ {\sigma }_{\rm{A}}, {\sigma }_{\rm{S}} $, ${\sigma }_{\rm B}$ observed [62] TaTe2 C2/m Exfoliation ST-FMR/SHH $ {\sigma }_{\rm{A}}, {\sigma }_{\rm{S}} $, ${\sigma }_{\rm B}$ observed [64] MoTe2 P21/m Exfoliation ST-FMR ${\sigma }_{\rm{S} }=4.4 —8.0,$ ${\sigma }_{\rm{B} }=0.04—1.6,$ ${\sigma }_{\rm{T} }=0.026—1.0$ [65] NbSe2 P63/mmc Exfoliation ST-FMR ${\sigma }_{\rm{A} }=0— 40,$ ${\sigma }_{\rm{S} }=0— 13,$ ${\sigma }_{\rm{T} }=- 2—3.5$ [66] PtTe2 — CVD ST-FMR ${\sigma }_{\rm{S} }=0.20—1.6\times {10}^{2}$ [68] TaS2 — Ion-beam sputtering ST-FMR/SHH $ {\sigma }_{\rm{S}}=14.9\times {10}^{2} $ [69] 
DownLoad:
CSV
-
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] [74] [75] [76] [77] [78] [79] [80] [81] [82] [83] [84] [85] [86] [87] [88] [89] [90] [91] [92] [93] [94] [95] [96] [97] [98] [99] [100] [101] [102] [103] [104] [105] [106] [107] [108] [109] [110]
DownLoad:
Catalog
Metrics
- Abstract views:13925
- PDF Downloads:1432
- Cited By:0