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Abstract

With the shrinkage of chip feature sizes, porous materials are widely used in microelectronics. However, they are facing severe challenges in plasma etching, as the reactive radicals can diffuse into the interior of material and damage the material, which is called plasma induced damage. In this paper, we review two kinds of etching processes based on low chuck temperature, i.e. cryogenic etching. By lowering the chuck temperature, either the etching by-products or the precursor gas can condense in the porous material, and thus preventing the radicals from diffusing and protect the material from being damaged by plasma. The technology of cryogenic filling inside the porous material is simple but effective, which allows it to have a good application prospect.

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Authors and contacts

Corresponding author:Wang You-Nian,ynwang@dlut.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 11675036, 11935005) and the Scientific Research Foundation from Dalian University of Technology, China (Grant No. DUT19RC(3)045)

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Cited By

DownLoad: Full-Size Img PowerPoint

	优点	缺点
傅里叶变换红外光谱	通过吸收峰变化, 可表征材料化学结构变化	对操作环境较敏感, 要避免材料二次污染的影响
光谱椭偏仪测量	通过反射率变化, 可间接推测介电常数等变化	需要额外数据处理
dHF酸浸泡法	操作简单, 易观测损伤	使用化学试剂, 腐蚀损伤材料

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Vol. 70, Issue 9 - 2021-05-05

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