[1] |
Jiang Long-Xing, Li Qing-Chao, Zhang Xu, Li Jing-Feng, Zhang Jing, Chen Zu-Xin, Zeng Min, Wu Hao.Spintronic devices based on topological and two-dimensional materials. Acta Physica Sinica, 2024, 73(1): 017505.doi:10.7498/aps.73.20231166 |
[2] |
Yu Ze-Hao, Zhang Li-Fa, Wu Jing, Zhao Yun-Shan.Recent progress of 2-dimensional layered thermoelectric materials. Acta Physica Sinica, 2023, 72(5): 057301.doi:10.7498/aps.72.20222095 |
[3] |
Bao Chang-Hua, Fan Ben-Shu, Tang Pei-Zhe, Duan Wen-Hui, Zhou Shu-Yun.Floquet engineering in quantum materials. Acta Physica Sinica, 2023, 72(23): 234202.doi:10.7498/aps.72.20231423 |
[4] |
Duan Xiu-Ming, Yi Zhi-Jun.Theoretical study on regulatory mechanism of dielectric environmental screening effects on binding energy of two-dimensional InX(X= Se, Te) exciton. Acta Physica Sinica, 2023, 72(14): 147102.doi:10.7498/aps.72.20230528 |
[5] |
Wu Ze-Fei, Huang Mei-Zhen, Wang Ning.Nonlinear Hall effects in two-dimensional moiré superlattices. Acta Physica Sinica, 2023, 72(23): 237301.doi:10.7498/aps.72.20231324 |
[6] |
Chen Xiao-Juan, Xu Kang, Zhang Xiu, Liu Hai-Yun, Xiong Qi-Hua.Research progress of bulk photovoltaic effect in two-dimensional materials. Acta Physica Sinica, 2023, 72(23): 237201.doi:10.7498/aps.72.20231786 |
[7] |
Tian Jin-Peng, Wang Shuo-Pei, Shi Dong-Xia, Zhang Guang-Yu.Vertical short-channel MoS2field-effect transistors. Acta Physica Sinica, 2022, 71(21): 218502.doi:10.7498/aps.71.20220738 |
[8] |
Song Rui, Wang Bi-Li, Feng Kai, Wang Li, Liang Dan-Dan.Structural, magnetic and ferroelectric properties of VOBr2monolayer: A first-principles study. Acta Physica Sinica, 2022, 71(3): 037101.doi:10.7498/aps.71.20211516 |
[9] |
.Structural, magnetic and ferroelectric properties of VOBr2 monolayer: A first-principles study. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211516 |
[10] |
Jiang Xiao-Hong, Qin Si-Chen, Xing Zi-Yue, Zou Xing-Yu, Deng Yi-Fan, Wang Wei, Wang Lin.Study on physical properties and magnetism controlling of two-dimensional magnetic materials. Acta Physica Sinica, 2021, 70(12): 127801.doi:10.7498/aps.70.20202146 |
[11] |
He Cong-Li, Xu Hong-Jun, Tang Jian, Wang Xiao, Wei Jin-Wu, Shen Shi-Peng, Chen Qing-Qiang, Shao Qi-Ming, Yu Guo-Qiang, Zhang Guang-Yu, Wang Shou-Guo.Research progress of spin-orbit torques based on two-dimensional materials. Acta Physica Sinica, 2021, 70(12): 127501.doi:10.7498/aps.70.20210004 |
[12] |
Wu Xiang-Shui, Tang Wen-Ting, Xu Xiang-Fan.Recent progresses of thermal conduction in two-dimensional materials. Acta Physica Sinica, 2020, 69(19): 196602.doi:10.7498/aps.69.20200709 |
[13] |
Liu Jian-Peng, Dai Xi.Topological properties and orbital magnetism in twisted graphene systems. Acta Physica Sinica, 2020, 69(14): 147301.doi:10.7498/aps.69.20200506 |
[14] |
Huang Bing-Quan, Zhou Tie-Ge, Wu Dao-Xiong, Zhang Zhao-Fu, Li Bai-Kui.Properties of vacancies and N-doping in monolayer g-ZnO: First-principles calculation and molecular orbital theory analysis. Acta Physica Sinica, 2019, 68(24): 246301.doi:10.7498/aps.68.20191258 |
[15] |
Liu Qi-Neng.The defect mode and the quantum effect of light wave in cylindrical anisotropic photonic crystal. Acta Physica Sinica, 2011, 60(1): 014217.doi:10.7498/aps.60.014217 |
[16] |
Yuan Ning-Yi, Chen Xiao-Shuang, Ding Jian-Ning, He Ze-Jun, Li Feng, Lu Wei.Quantum effect and up-conversion luminescence of ZnO-SiO2 composite films synthesized by sol-gel technique. Acta Physica Sinica, 2009, 58(4): 2649-2653.doi:10.7498/aps.58.2649 |
[17] |
Liu Kui, Ding Hong-Lin, Zhang Xian-Gao, Yu Lin-Wei, Huang Xin-Fan, Chen Kun-Ji.Simulation of a triple-gate single electron FET memory with a quantum dot floating gate and a quantum wire channel. Acta Physica Sinica, 2008, 57(11): 7052-7056.doi:10.7498/aps.57.7052 |
[18] |
Wang Yue-Yue, Yang Qin, Dai Chao-Qing, Zhang Jie-Fang.Solitary wave solution of Zakharov equation with quantum effect. Acta Physica Sinica, 2006, 55(3): 1029-1034.doi:10.7498/aps.55.1029 |
[19] |
Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng.2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects. Acta Physica Sinica, 2006, 55(7): 3670-3676.doi:10.7498/aps.55.3670 |
[20] |
Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E.An analytical model of MOSFET threshold voltage with considiring the quantum effects. Acta Physica Sinica, 2005, 54(2): 897-901.doi:10.7498/aps.54.897 |