Recent advances in synthesis and memory computing of large-area <i>α</i>-MoO<sub>3</sub>

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Abstract

In recent years, α-MoO ₃has received extensive attention in the research of memristor devices. The variation of valence of molybdenum will lead the resistivity to change, and the unique layer structure is beneficial to the implantation of donor ion into free space to adjust the conductance, so that it has a great influence on the study of synaptic transistors. This paper mainly summarize the properties of α-MoO ₃, the method and characteristics of large-scale two-dimensional α-MoO ₃and analyze the recent progress of in-memory computing based on α-MoO ₃. Primarily, this paper introduces crystal structures, band structure and defect state of α-MoO ₃. The synthesis methods of large-area α-MoO ₃are compared with each other, including the one-step method to directly obtain α-MoO ₃nanosheets, and the combined post-annealing process of magnetron sputtering or atomic layer deposition to prepare the thin α-MoO ₃films. In the one-step synthesis method we conclude that the chamber pressure influences the ratio of MoO ₃to MoO _3–x, and the growth temperature affects the ratio of α-MoO ₃to β-MoO ₃. That is to say, the phase composition of molybdenum trioxide, the concentration of precursors has an important influence on the film size. The advantages of α-MoO ₃synthesis by different methods in memory computing applications are discussed in detail. And then, this paper summarizes the device performance of α-MoO ₃in memristor and the application progress of α-MoO ₃-based neuromorphic devices, and analyzes the performance of α-MoO ₃-based resistive random access memory such as switching ratio, endurance, and stability in detail. The synaptic functions of different structural device units are extensively studied, and various typical synapse functions are realized such as short-term plasticity, long-term plasticity, paired pulse facilitation, etc. It shows the excellent characteristics of low energy consumption in the simulation of synaptic plasticity. The use of short-term memory and long-term memory modes of the device can realize the functions of image memory and preprocessing. Through the memristor array combined with the back-propagation network, the high-precision handwriting recognition can be realized. Finally, combining the recent research progress of α-MoO ₃, its opportunities and challenges in the field of memory computing are prospected.

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Authors and contacts

Corresponding author:Wang Fang,fwang75@163.com; Zhang Kai-Liang,kailiang_zhang@163.com

Funds:Project supported by the Natural Science Foundation of Tianjin, China (Grant Nos. 18JCZDJC30500, 17JCYBJC16100, 17JCZDJC31700), the National Natural Science Foundation of China (Grant Nos. 61404091, 61274113, 61505144, 51502203, 51502204), the Science and Technology Planning Project of Tianjin, China (Grant No. 20ZYQCGX00070), the Open Project of State Key Laboratory of Functional Materials for Information, China (Grant No. SKL202007), and the National Key Research and Development Program of China (Grant No. 2017YFB0405600)

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Ref.	Carrier flow	Pressure	Substrate temperature/℃	Growth time/min	Lateral size	Thickness/nm
[13]	—	Atmospheric	580	120	69.6 μm	5.3—89.8
[16]	—	Atmospheric	850—1050	30	0.72 cm	—
[17]	Ar	Atmospheric	750	20	Centimeters scale	4.3—550
[18]	Ar	310 mTorr	530	45	500 µm × 500 µm	8 ± 0.75
[19]	Ar & O₂	100 mTorr	150	90	Wafer-scale	30
[20]	—	Atmospheric	540	20	Centimeters scale	≥ 1.4
[21]	N₂	Atmospheric	350—480	20	Several tens micron	2.8—14

DownLoad: CSV

Ref.	R_on/R_off	Endurence	V_forming/V	V_set/V	V_reset/V	Retention/s	Compliance/mA
[24]	10—10²	60	1.8—3	1—2	0.5—1	—	2—5
[36]	10³	—	–2.2	1.7	3.3	10³	10^-3
[37]	> 10⁵	50	3.2—4.1	3—3.9	4.45—5.9	10⁴	50
[38]	10³	> 6000	–2.7	–2	2.5	> 10⁴	0.8
[39]	18	—	24.5	1.8	–1.1	3.6 × 10³	1
[40]	～350	—	—	1—3	—	2.6 × 10⁶	—
[41]	1.15 × 10³	7	—	4	8	4.5 × 10³	—
[42]	1.6 × 10²	500	—	–3	3	—	—
[43]	10⁶	> 100	—	0.8	–0.2—1.6	2 × 10⁴	10²
[44]	20	—	—	2.2	–1.1	1.4 × 10³	0.1
[45]	—	—	Free	0.4	–1	—	0.1

DownLoad: CSV

Ref.	Channel material	Electrolyte	Operation votage/V	Pulse width/ ms	Energy consumption
[56]	α-MoO₃	EMIM(CF₃SO₂)₂N	2.5	1	9.6 pJ
[57]	α-MoO₃	LiClO₄/PEO	2.5	1	≈0.16 pJ
[58]	IGZO	Chitosan	2	25	1.0 nJ
[59]	IZO	Methyl cellulose	0.2—1	15—60	16 nJ
[60]	MoS₂	chitosan	1.5	10	5 pJ

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Vol. 70, Issue 9 - 2021-05-05

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