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Abstract

To break through the conventional binary storage based on spin valves and magnetic tunnel junctions, multi-state storage has been successfully achieved in Hall balance. Meanwhile, logic operation can be realized in the storage cell of Hall balance to improve the operation efficiency. Therefore, the concept of Hall balance will benefit the device integration, which provides an effective insight into fabricating the development of spintronics. In this topical review article, firstly the background of memory based on Hall balance is introduced. Secondly, the concept and recent progress of Hall balance are briefly summarized. Thirdly, the manipulation of anomalous Hall resistance ratio (HRR) and its physical mechanism is systematically investigated. Furthermore, magnetic skyrmions and their dynamics in Hall balance are presented in detail. Finally, the application of Hall balance to other kinds of materials is discussed and prospects its future.

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Authors and contacts

Corresponding author:Wang Shou-Guo,sgwang@ustb.edu.cn

Funds:Project supported by the National Key R&D Program of China (Grant No. 2019YFB2005800), the National Natural Science Foundation of China (Grant Nos. 11874082, 51625101, 51961145305, 51971026), and the Key Program of the Natural Science Foundation of Beijing, China (Grant No. Z190007)

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Vol. 70, Issue 4 - 2021-02-20

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