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Thermoelectric (TE) materials can directly realize the mutual conversion between heat and electricity, and it is an environmentally friendly functional material. At present, the thermoelectric conversion efficiencies of thermoelectric materials are low, which seriously restricts the large-scale application of thermoelectric devices. Therefore, finding new materials with better thermoelectric properties or improving the thermoelectric properties of traditional thermoelectric materials has become the subject of thermoelectric research. Thin film materials, compared with bulk materials, possess both the two-dimensional macroscopic properties and one-dimensional nanostructure characteristics, which makes it much easier to study the relationships between physical mechanisms and properties. Besides, thin film are also suitable for the preparation of wearable electronic devices. This article summarizes five different preparation methods of Cu 2Se thin films, i.e. electrochemical deposition, thermal evaporation, spin coating, sputtering, and pulsed laser deposition. In addition, combing with typical examples, the characterization methods of the film are summarized, and the influence mechanism of each parameter on the thermoelectric performance from electrical conductivity, Seebeck coefficient and thermal conductivity is discussed. Finally, the hot application direction of Cu 2Se thin film thermoelectrics is also introduced.
[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] [74] [75] [76] [77] [78] [79] [80] [81] [82] [83] [84] [85] [86] [87] [88] [89] [90] -
Table 1. in recent years.
Methods Film Cu/Se Crystallite
size/mmS/μV·K–1 σ/
×103S/mκ/
W·(m·K)–1PF/
mW·(m·K2)–1ZT Ref. Chemical
deposition600 1.8 38 18 [68] 330 2.125 1 [69] 403 1.96 37.039 17.8 [70] 1700 1.81 8.13 × 103 [71] Pulsed laser
deposition40 1.7 < 10 450 [72] 234 57 130 619 [10] 60 10 350 [61] Electrochemial
deposition90—100 1.92—1.89 0.14—0.22 [42] 1.78 40—50 80 27 0.77 173 0.07 [41] 2.191 34 56 130 [73] Sputtering deposition 1—3 1000 10—100 100 [74] 3—10 100 > 100 1 48—131 1.777 37.3 1.4—4.9 [5] 600—850 1—9 25—84 100 100 0.8 ± 0.1 110 0.4 [60] Spin coating
process300—500 44.603 [75] 62.6 1.9—1.995 200—250 25 0.62 653 0.34 [54] 50—100 80 100 0.4—1.4 0.14 [76] 55 1.79 ± 0.06 10 1.3—1.5 620 [40] Simple mechanical
pressing10000—50000 1.743 14.3 557.82 0.79 111.84 0.04 [9] Wet-chemical
process8000 1.98 50.8 104.7 0.25—0.3 270.3 0.3 [77] 
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[1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] [30] [31] [32] [33] [34] [35] [36] [37] [38] [39] [40] [41] [42] [43] [44] [45] [46] [47] [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] [73] [74] [75] [76] [77] [78] [79] [80] [81] [82] [83] [84] [85] [86] [87] [88] [89] [90]
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