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Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang.Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica, 2023, 72(4): 048503.doi:10.7498/aps.72.20221831 |
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Yu Yi, An Zhi-Dong, Cai Xiao-Yi, Guo Ming-Lei, Jing Cheng-Bin, Li Yan-Qing.Recent progress of tin-based perovskites and their applications in light-emitting diodes. Acta Physica Sinica, 2021, 70(4): 048503.doi:10.7498/aps.70.20201284 |
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Li Jia-Sen, Liang Chun-Jun, Ji Chao, Gong Hong-Kang, Song Qi, Zhang Hui-Min, Liu Ning.Improvement in performance of carbon-based perovskite solar cells by adding 1, 8-diiodooctane into hole transport layer 3-hexylthiophene. Acta Physica Sinica, 2021, 70(19): 198403.doi:10.7498/aps.70.20210586 |
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Fan Qin-Hua, Zu Yan-Qing, Li Lu, Dai Jin-Fei, Wu Zhao-Xin.Research progress of stability of luminous lead halide perovskite nanocrystals. Acta Physica Sinica, 2020, 69(11): 118501.doi:10.7498/aps.69.20191767 |
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Wu Hai-Yan, Tang Jian-Xin, Li Yan-Qing.Efficient and stable blue perovskite light emitting diodes based on defect passivation. Acta Physica Sinica, 2020, 69(13): 138502.doi:10.7498/aps.69.20200566 |
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Chen Jia-Mei, Su Hang, Li Wan, Zhang Li-Lai, Suo Xin-Lei, Qin Jing, Zhu Kun, Li Guo-Long.Research progress of enhancing perovskite light emitting diodes with light extraction. Acta Physica Sinica, 2020, 69(21): 218501.doi:10.7498/aps.69.20200755 |
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Wu Jia-Long, Dou Yong-Jiang, Zhang Jian-Feng, Wang Hao-Ran, Yang Xu-Yong.Perovskite light-emitting diodes based on solution-processed metal-doped nickel oxide hole injection layer. Acta Physica Sinica, 2020, 69(1): 018101.doi:10.7498/aps.69.20191269 |
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Fu Peng-Fei, Yu Dan-Ni, Peng Zi-Jian, Gong Jin-Kang, Ning Zhi-Jun.Perovskite solar cells passivated by distorted two-dimensional structure. Acta Physica Sinica, 2019, 68(15): 158802.doi:10.7498/aps.68.20190306 |
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Wei Ying-Qiang, Xu Lei, Peng Qi-Ming, Wang Jian-Pu.Rashba effect in perovskites and its influences on carrier recombination. Acta Physica Sinica, 2019, 68(15): 158506.doi:10.7498/aps.68.20190675 |
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Li Zhen-Chao, Chen Zi-Ming, Zou Guang-Rui-Xing, Yip Hin-Lap, Cao Yong.Applications of organic additives in metal halide perovskite light-emitting diodes. Acta Physica Sinica, 2019, 68(15): 158505.doi:10.7498/aps.68.20190307 |
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Wang Dang-Hui, Xu Tian-Han.Low-frequency generation-recombination noise behaviors of blue/violet-light-emitting diode. Acta Physica Sinica, 2019, 68(12): 128104.doi:10.7498/aps.68.20190189 |
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Qu Zi-Han, Chu Ze-Ma, Zhang Xing-Wang, You Jing-Bi.Research progress of efficient green perovskite light emitting diodes. Acta Physica Sinica, 2019, 68(15): 158504.doi:10.7498/aps.68.20190647 |
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Huang Wei, Li Yue-Long, Ren Hui-Zhi, Wang Peng-Yang, Wei Chang-Chun, Hou Guo-Fu, Zhang De-Kun, Xu Sheng-Zhi, Wang Guang-Cai, Zhao Ying, Yuan Ming-Jian, Zhang Xiao-Dan.Perovskite light-emitting diodes based on n-type nanocrystalline silicon oxide electron injection layer. Acta Physica Sinica, 2019, 68(12): 128103.doi:10.7498/aps.68.20190258 |
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Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica, 2015, 64(18): 187801.doi:10.7498/aps.64.187801 |
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi.Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801.doi:10.7498/aps.64.107801 |
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Li Hai-Hong, Liu Wen, Liu De-Sheng.Influence of the choice of zero electric potential energy on charge injection in theoretical calculation. Acta Physica Sinica, 2011, 60(9): 097201.doi:10.7498/aps.60.097201 |
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Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie.A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica, 2011, 60(9): 098107.doi:10.7498/aps.60.098107 |
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao.Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193.doi:10.7498/aps.58.7189 |
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
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Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang.Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389.doi:10.7498/aps.55.1384 |