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Abstract

Lead halide perovskites have aroused widespread interest in recent years due to their superior optoelectronic properties, such as high absorption coefficient, high charge carrier mobility, high defect tolerance and high photoluminescence (PL) efficiency. However, one critical problem which potentially hampers their commercial applications is the toxicity caused by lead. To address this toxicity problem, a careful and strategic replacement of Pb ²⁺with other nontoxic candidate elements represents a promising direction. Tin (Sn), currently the most promising alternative to lead due to its structure and properties, has received extensiveattention. In this review, some recent developments of Sn-based perovskites and their applications in light-emitting diodes are summarized. Firstly, some synthesis methods of Sn-based perovskite materials are introduced. Then, the crystal structures and photoelectric properties of Sn-perovskites in different valence states are analyzed. Then, the potential application of Sn-based perovskite materials in light-emitting devices is presented and some methods to improve the performance of Sn-based PeLEDs are also summarized. Finally, the significant challenges in these Sn-based PeLEDs are pointed out and their possible solutions are suggested. It is expected that this review can conduce to an in-depth understanding of Sn-based halide materials and their application in PeLEDs.

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Authors and contacts

Corresponding author:Jing Cheng-Bin,cbjing@ee.ecnu.edu.cn; Li Yan-Qing,yqli@phy.ecnu.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 61520106012, 61722404, 51873138)

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Cited By

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年份	器件结构	优化方式	电致发光峰/nm	半峰宽/nm	最大亮度/ 辐射率	EQE/%	参考文献
2018	ITO/ZnO/PEI/(C₁₈H₃₅NH₃)₂SnBr₄/TCTA/MnO₃/Al	低维	621	162	350 cd/m²	0.1	[40]
2019	ITO/PVK/(PEA)_3.5Cs₅Sn_4.5I_17.5/TmPyPB/LiF/Al	低维	920	—	40 W/(sr·m²)	3.01	[42]
2020	ITO/PEDOT:PSS/TEA₂SnI₄/TPBi/LiF/Al	低维	638	28	322 cd/m²	0.62	[59]
2016	ITO/PEDOT:PSS/CsSnI₃/PBD/LiF/Al	—	950	—	40 W/(sr·m²)	3.8	[58]
2018	ITO/LiF/CsSnBr₃/LiF/ZnS/Al	封装层	672	—	172 cd/m²	0.34	[65]
2020	ITO/PEDOT:PSS/(PEA)₂SnI₄/TPBi/LiF/Al	还原剂	633	24	70 cd/m²	0.3	[88]
2020	ITO/PEDOT:PSS/(PEA)₂SnI₄/TPBi/LiF/Al	还原剂	632	—	132 cd/m²	0.72	[110]
2020	ITO/PEDOT:PSS/(PEA)₂SnI₄/TPBi/LiF/Al	还原剂	630	—	355 cd/m²	0.52	[39]
2018	ITO/PEDOT:PSS/CsPbBr₃/PMMA/B3 PYMPM/LiF/Al	—	525	20	14000 cd/m²	20.3	[2]
2018	ITO/ZnO-PEIE/FAPbI₃/TFB/MoOx/Au	—	800	—	390 W/(sr·m²)	20.7	[3]
2019	ITO/ZnO-PEIE/FAPbI₃/TFB/MoOx/Au	—	800	—	308 W/(sr·m²)	21.6	[5]
2019	ITO/poly-TPD/FA_0.33Cs_0.67Pb(I_0.7Br_0.3)₃/TPBi/LiF/Al	—	694	37	—	20.9	[37]

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Vol. 70, Issue 4 - 2021-02-20

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