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Abstract

As one of the most dazzling star materials in recent years, perovskite has attracted extensive attention due to its unique photoelectric properties. Since the first report on 3.8% power conversion efficiency of perovskite solar cells (PSCs) was published in 2009, its efficiency has increased to 25.2% in a short period of 10 years, almost comparable to the efficiency of commercial polysilicon cells. However, due to its simple preparation process, it is easy to introduce a large number of defects in the film formation process. The defects accelerate the recombination of carriers and thus hindering the carrier transport channel, which is unfavorable for the preparation of high efficiency perovskite solar cells. Moreover, the existence of defects will affect the stability of PSCs, accelerate the degradation of materials, thereby hindering its further commercial development. Therefore, it is very important to understand the mechanism of defects and effectively suppress the generation of defects for the fabrication of high performance devices. As an effective passivation strategy, the interface modification has been widely used. In this paper, the locations of defects in different structures of devices and their effects on device performance are discussed. Based on the carrier transport layer passivation strategy and perovskite interface modification strategy, the mechanism of the passivation defects at the transport layer/perovskite interface is analyzed. The great advantages of passivation strategy and the classification of appropriate passivation materials are pointed out. It is hoped that this paper can provide useful guidance for developing the perovskite solar cells with high repeatability, high efficiency and long-term stability.

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Authors and contacts

Corresponding author:Liang Chun-Jun,chjliang@bjtu.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 61874008, 61574014, 11474017) and the Beijing Municipal Science and Technology Project, China (Grant No. Z181100004718004)

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Passivation material	Perovskite material	Passivation position	J_sc/(mA·cm^–2)	V_OC(V)	FF/%	PCE/%	Ref.
ITIC-Th	(FAPbI₃)_x(MAPbCl₃)_1–_x	TiO₂/ITIC-Th	23.56 22.89	1.05 1.02	76.58 66.10	18.91^a 15.43^b	[21]
H₂PtCl₆.	MAPbI₃	TiO₂-Pt	23.83 22.13	1.15 1.06	75 70	20.05^a 17.52^b	[25]
MeOH+CF disperse the NCs	Cs_0.05FA_0.81MA_0.14PbI_2.55Br_0.45	TiO₂-Cl	22.3	1.189	80.6	21.4^b	[26]
Boron element	MAPbI₃	B-TiO₂	23.71 22.96	1.10 1.08	78.60 76.60	20.51^a 19.06^b	[27]
EDTA	CsFAPbI	E-SnO₂	24.57 22.79	1.11 1.10	79.2 75.5	21.60^a 18.93^b	[28]
Synthesized N, S-RCQs	Cs_0.05FA_0.81MA_0.14PbI_2.55Br_0.45	SnO₂-RCQs	24.1 23.1	1.14 1.07	82.9 77.8	22.77^a 19.15^b	[29]
KOH/NaOH	Cs_0.05(FA_0.85MA_0.15)_0.95Pb(I_0.85Br_0.15)₃	SnO₂/KOH SnO₂/NaOH	22.48 22.26	1.144 1.095	78 78	20.06^a 19.01^b	[30]
TiAcac/ZrAcac/HfAcac	MAPbI₃	PCBM/ZrAcac/Ag	22.17 20.03	1.079 1.048	78.1 59.1	18.69^a 12.43^b	[32]
Fullerene(C₆₀)	MAPbI₃	ICBA/C₆₀	15.7	0.97	80.1	12.2^a	[33]
TBP+PbI₂	FA_xMA_1–_xPb(I_yBr_1–_y)₃	PbI₂-doped Spiro	23.9 22.7	1.123 1.077	75.6 71.8	20.3^a 17.6^b	[35]
LAD replace Li-TFSI/t-BP	MAPbI₃	LAD-doped Spiro	22.35 22.34	1.05 1.02	81 78	19.01^a 17.77^b	[36]
V₂O₅	MAPbI₃	V₂O₅/PEDOT	22.69 18.86	0.884 0.896	74.70 74.08	15^a 12.52^b	[38]
GO solution (Highly concentrated graphene oxide)	MAPb(I_yBr_1–_y)₃	PEDOT:GO	21.55 19.63	1.02 0.97	82.3 78.53	18.09^a 14.95^b	[39]
NiO_x/Spiro bilayers	(FAPbI₃)_0.87(MAPbBr₃)_0.13	NiO_x/Spiro	23.82 23.02	1.14 1.10	79.8 78.2	21.66^a 19.80^b	[40]
NaCl or KCl	Cs_0.05(FA_0.85MA_0.15)_0.95Pb(I_0.85Br_0.15)₃	NiO_x/MClM: Na or K	22.89 22.65	1.15 1.07	79.5 79.5	20.96^a 19.27^b	[41]
Cu(ac)₂	MAPbI_3–_xCl_x	Cu-doped NiO_x	22.84 ± 0.32 23.53 ± 0.32	1.06 ± 0.01 1.10 ± 0.01	59.68 ± 2.79 70.04 ± 1.47	14.47 ± 0.83^b 18.05 ± 0.58^a	[42]
Thiophene or pyridine	MAPbI_3–_xCl_x	Perovskite/Thiophene or pyridine	21.3 24.1 20.7	1.02 1.05 0.95	68 72 68	15.3(T)^a1 16.5(p)^a2 13.1^b	[45]
PVP Poly(4-vinylpyridine)	MAPbI₃	Perovskite/PVP	22.0 20.1	1.05 0.90	66 64	15.1^a 11.6^b	[46]
Lewis base BrPh-ThR and Lewis acid bis-PCBM	(FAI)_0.81(PbI₂)_0.85(MABr)_0.15(PbBr₂)_0.15	BrPh-ThR-doped Perovskite/bis-PCBM	23.93 23.13	1.12 1.10	78 73	21.7^a 19.3^b	[47]
ITIC;DTS;DR3T;PCBM	MAPbI₃	Perovskite/DR3T	22.20 ± 0.68 21.07 ± 0.87	1.08 ± 0.02 1.06 ± 0.02	75.6 ± 1.07 4.7 ± 1.6	18.22 ± 0.65^a 16.66 ± 0.63^b	[48]
PEAI	FAMAPbI	Perovskite/PEAI	24.9	1.16	81.4	23.56^a	[49]
NMAI	Cs_0.05(FA_0.85MA_0.15)_0.95Pb(I_0.85Br_0.15)₃	Perovskite/NMAI	22.28 22.54	1.174 1.092	78.63 77.58	20.57^a 19.10^b	[50]
GABr	(FA_0.95PbI_2.95)_0.85(MAPbBr₃)_0.15	Perovskite/GABr	22.50 ± 0.92 22.56 ± 0.97	1.20 ± 0.0 21.10 ± 0.03	77 ± 1 78.5 ± 2	20.79 ± 0.50^a 19.48 ± 0.85^b	[51]
FAI	MAPbI₃	Perovskite/FAI	22.99 22.36	1.127 1.126	77.5 75.5	20.09^a 18.96^b	[52]
LAIS	Cs_0.05(FA_0.85MA_0.15)_0.95Pb(I_0.85Br_0.15)₃	BDAI/Perovskite	22.59	1.21	81.63	22.31^a	[53]
Residual amount of different PbI₂	FAMAPbI	Perovskite/PbI₂	23.69	1.13	80.61	21.52^a	[54]
Residual amount of different PbI₂	FAMAPbI	PbI₂/Perovskite/PbI₂	24.8 24.1 23.8	1.15 1.12 1.04	78.4 80.1 75.2	22.3^a1 21.6^a2 18.8^b	[55]
Cetyltrimethylammonium bromide (CTAB)	FAMAPbI	modulated perovskite films with ligand-modulation technology	23.82 23.83	1.14 1.10	81.14 78.54	22.03^a 20.58^b	[56]
BAI	BA_x(FA_0.83Cs_0.17)_1–_xPb(I_0.6Br_0.4)₃	2D-3D	22.7 19.8	1.14 1.14	80 75	20.6^a 16.9^b	[58]
BABr	(FA_0.83Cs_0.17)Pb(I_0.6Br_0.4)₃	3D/2D	19.3 19.2	1.31 1.24	78 74	19.8^a 17.5^b	[59]
PEAI	Cs_0.1FA_0.74MA_0.13PbI_2.48Br_0.39	3D/2D	22.73 21.81	1.14 1.098	76.3 77.9	20.08^a 18.65^b	[60]
PEAI	MAPbI₃	2D/3D/2D	23.77 21.31	0.94 0.89	81.95 79.28	18.37^a 15.10^b	[61]
EAI, IAI, and GuaI	FA_0.93Cs_0.07Pb (I_0.92Br_0.08)₃	3D/2D(EAI)	24.14 24.50	1.12 1.08	81 76	22.40^a 20.52^b	[62]
FEAI	CsFAMAPbI	3D/2D(FEAI)	25.79 25.47	1.096 1.045	78.4 77.5	22.16^a 20.62^b	[63]
HDAD+	Cs_0.05(MA_0.17FA_0.83)_0.95Pb(I_0.83Br_0.17)₃	3D/2D (HDADI)	22.80 22.88	1.10 1.09	81 77	20.31^a 19.22^b	[64]
tBBAI	Cs_0.05FA_0.85MA_0.10Pb(I_0.97Br_0.03)₃	Perovskite/tBBAI	25.10 24.79	1.14 21.091	82.1 78.5	23.5^a 21.2^b	[65]
Triphenylphosphine oxide (TPPO) and tribenzylphosphine oxide (TBPO)	Cs_0.1FA_0.74MA_0.13PbI_2.48Br_0.39	Perovskite/TPPO Perovskite/TBPO	23.9 ± 0.25 23.7 ± 0.31 23.7 ± 0.21	1.139 ± 0.00 6 1.131 ± 0.004 1.106 ± 0.013	80 ± 1 79 ± 1 78 ± 2	21.7 ± 0.2^a1 21.2 ± 0.2^a2 20.4 ± 0.3^b	[66]
(1H, 1H, 2H, 2H-perfluorooctyl trichlorosilane)PFTS	Cs_0.05(FA_0.85MA_0.15)_0.95PbI_2.55Br_0.45	Perovskite/PFTS	23.03 22.93	1.176 1.136	78.80 77.39	21.34^a 20.16^b	[67]
Theophylline, caffeine, and theobromine	(FAPbI₃)_0.92(MAPbBr₃)_0.08	N-H and C=O Passivation defect	25.24 24.78	1.191 1.164	78.1 72.9	23.48^a 21.02^b	[68]
注: a, 材料钝化; b.原始无钝化. 仅有一行参数的为只给出了最优钝化性能; 有三行参数的前两行分别是不同材料钝化结果.

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Vol. 70, Issue 2 - 2021-01-20

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