[1] |
Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang.Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica, 2023, 72(4): 048503.doi:10.7498/aps.72.20221831 |
[2] |
Chen Jia-Mei, Su Hang, Li Wan, Zhang Li-Lai, Suo Xin-Lei, Qin Jing, Zhu Kun, Li Guo-Long.Research progress of enhancing perovskite light emitting diodes with light extraction. Acta Physica Sinica, 2020, 69(21): 218501.doi:10.7498/aps.69.20200755 |
[3] |
Wang Su-Jie, Li Shu-Qiang, Wu Xiao-Ming, Chen Fang, Jiang Feng-Yi.Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP. Acta Physica Sinica, 2020, 69(4): 048103.doi:10.7498/aps.69.20191720 |
[4] |
Wang Dang-Hui, Xu Tian-Han.Low-frequency generation-recombination noise behaviors of blue/violet-light-emitting diode. Acta Physica Sinica, 2019, 68(12): 128104.doi:10.7498/aps.68.20190189 |
[5] |
Qu Zi-Han, Chu Ze-Ma, Zhang Xing-Wang, You Jing-Bi.Research progress of efficient green perovskite light emitting diodes. Acta Physica Sinica, 2019, 68(15): 158504.doi:10.7498/aps.68.20190647 |
[6] |
Jia Bo-Lun, Deng Ling-Ling, Chen Ruo-Xi, Zhang Ya-Nan, Fang Xu-Min.Numerical research of emission properties of localized surface plasmon resonance enhanced light-emitting diodes based on Ag@SiO2 nanoparticles. Acta Physica Sinica, 2017, 66(23): 237801.doi:10.7498/aps.66.237801 |
[7] |
Wang Dang-Hui, Xu Tian-Han, Wang Rong, Luo She-Ji, Yao Ting-Zhen.Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise. Acta Physica Sinica, 2015, 64(5): 050701.doi:10.7498/aps.64.050701 |
[8] |
Chen Wei-Chao, Tang Hui-Li, Luo Ping, Ma Wei-Wei, Xu Xiao-Dong, Qian Xiao-Bo, Jiang Da-Peng, Wu Feng, Wang Jing-Ya, Xu Jun.Research progress of substrate materials used for GaN-Based light emitting diodes. Acta Physica Sinica, 2014, 63(6): 068103.doi:10.7498/aps.63.068103 |
[9] |
Gao Hui, Kong Fan-Min, Li Kang, Chen Xin-Lian, Ding Qing-An, Sun Jing.Structural optimization of GaN blue light LED with double layers of photonic crystals. Acta Physica Sinica, 2012, 61(12): 127807.doi:10.7498/aps.61.127807 |
[10] |
Chen Huan-Ting, Lü Yi-Jun, Gao Yu-Lin, Chen Zhong, Zhuang Rong-Rong, Zhou Xiao-Fang, Zhou Hai-Guang.The physical characteristic study on luminance uniformity and temperature for power GaN LEDs chip. Acta Physica Sinica, 2012, 61(16): 167104.doi:10.7498/aps.61.167104 |
[11] |
Dong Ya-Juan, Zhang Jun-Bing, Chen Hai-Tao, Zeng Xiang-Hua.Performance of power omnidirectimal reflector LED. Acta Physica Sinica, 2011, 60(7): 077803.doi:10.7498/aps.60.077803 |
[12] |
Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao.Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica, 2010, 59(2): 1268-1274.doi:10.7498/aps.59.1268 |
[13] |
Zhu Li-Hong, Cai Jia-Fa, Li Xiao-Ying, Deng Biao, Liu Bao-Lin.Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers. Acta Physica Sinica, 2010, 59(7): 4996-5001.doi:10.7498/aps.59.4996 |
[14] |
Li Wei-Jun, Zhang Bo, Xu Wen-Lan, Lu Wei.Experimental and theoretical study of blue InGaN/GaN multiple quantum well blue light-emitting diodes. Acta Physica Sinica, 2009, 58(5): 3421-3426.doi:10.7498/aps.58.3421 |
[15] |
Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao.Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193.doi:10.7498/aps.58.7189 |
[16] |
Li Bing-Qian, Liu Yu-Hua, Feng Yu-Chun.The power dissipation of equivalent series resistance and its influence on lumen efficiency of GaN based high power light-emitting diodes. Acta Physica Sinica, 2008, 57(1): 477-481.doi:10.7498/aps.57.477 |
[17] |
Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling.Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2008, 57(1): 472-476.doi:10.7498/aps.57.472 |
[18] |
Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di.Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2007, 56(10): 6003-6007.doi:10.7498/aps.56.6003 |
[19] |
Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
[20] |
Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang.Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389.doi:10.7498/aps.55.1384 |