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Abstract

In this paper, the Am-241 is used as an alpha particle radioactive source to investigate the soft error mechanism in 65-nm and 90-nm static random accessmemory (SRAM). Combining reverse analysis, TRIM and CREME-MC Monte Carlo simulation, the energy transport process, deposited energy spectrum and cross-section characteristics of alpha particles in the device are revealed. The results show that the soft error sensitivity of the 65-nm device is much higher than that of the 90-nm device, and no flipping polarity is found. According to the real-time measured soft error rate at an altitude of 4300 m in Tibetan Yangbajing area, the thermal neutron sensitivity and alpha particle soft error rate, the overall soft error rate of 65-nm SRAM used at sea level of Beijing city is 429 FIT/Mb, and the contribution from alpha particles is 70.63%. Based on the results of reverse analysis, a three-dimensional simulation model of the device is constructed to study the influence of the incident angle of alpha particles on the single event upset characteristics. It is found that the corresponding deposition energy value at the peak of the number of particles in the sensitive region decreases by 40% with the incident angle increasing from 0° to 60°. While the single event upset cross sectionincreases by 79% due to the apparent single event upset edge effect in a sensitive region of the 65-nm device.

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Authors and contacts

Corresponding author:Lei Zhi-Feng,leizhifeng@ceprei.com; Huang Yun,yunhuang@ceprei.com;

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 61704031), the Science and Technology Research Project of Guangdong Province, China (Grant Nos. 2017B090901068, 2017B090921001), and the Science and Technology Plan Project of Guangzhou, China (Grant No. 201707010186)

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α粒子源	Am-241
放射率/粒子·2π^–1·min^–1	5.73 × 10⁵
尺寸	圆柱体,Φ18 mm, 1 mm厚

DownLoad: CSV

器件类型	型号	厂商	工艺尺寸/nm	测试容量/Mb	工作电压/V	硅片尺寸
DDR-II SRAM	CY7C1318	CYPRESS	65	1.125	1.8	5 mm × 8 mm
QDR-II SRAM	CY7C1412	CYPRESS	65	18	1.8	5 mm × 8 mm
SRAM	CY7C1019D	CYPRESS	90	1	3.3	2 mm × 2 mm

DownLoad: CSV

器件	测试容量/Mb	粒子注量率/cm^–2·s^–1	测试时长	SEU数量	SEU截面/cm²·bit^–1
CY7 C1318(65 nm)	1.125	1.33 × 10³	7 min 52 s	204	2.76 × 10^–10
CY7 C1412(65 nm)	18	1.33 × 10³	3 min 41 s	1613	2.91 × 10^–10
CY7 C1019 D(90 nm)	1	7.42 × 10²	16 h	127	2.83 × 10^–12

DownLoad: CSV

α粒子发射率等级	发射率/cm^–2·h^–1	65 nm SRAM软错误率/FIT·Mb^–1	90 nm SRAM软错误率/FIT·Mb^–1
ULA	~0.001	3.03 × 10²	2.97
Low Alpha (LA)	~0.01	3.03 × 10³	29.7
Uncontrolled Alpha	~20	6.06 × 10⁶	5.94 × 10⁴

DownLoad: CSV

粒子种类	4300 m海拔处的软错误率/FIT·Mb^–1	占比(4300 m海拔)	北京海平面处的软错误率/FIT·Mb^–1	占比(北京海平面)
全部	2356	100%	429	100%
α粒子	303	12.86%	303	70.63%
高能中子	2053	87.14%	126	29.37%
热中子	0	0%	0	0%

DownLoad: CSV

器件	存储单元尺寸	灵敏区尺寸	灵敏区厚度/μm	重离子LET阈值/ MeV·cm²·mg^-1	临界能量/keV
65 nm SRAM	1 μm × 0.5 μm	0.2 μm × 0.19 μm	0.45	0.22^[19]	22.5^[19]

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Vol. 69, Issue 13 - 2020-07-05

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