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Abstract

Inorganic ferroelectric films exhibit excellent electric and optic properties, which have been widely used in dielectrics, memory, piezoelectric, photoelectric devices, etc. However, conventional synthesis strategies based on rigid single-crystal substrates severely limit their applications in flexible electronics. Realization of flexible inorganic ferroelectric films can introduce the excellent properties of inorganic ferroelectric materials into flexible devices, which is the developing trend for the next generation of electronic devices. In this review, the strategies to fabricate flexible inorganic perovskite structures’ ferroelectric films are summarized, including 1) direct growth on flexible substrates, 2) transferring ferroelectric film from a rigid substrate to a flexible one. Subsequently, the applications of flexible inorganic ferroelectric films are briefly introduced. Finally, research status, prospects and future development trend of flexible inorganic ferroelectric films are discussed.

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Authors and contacts

Corresponding author:Lin Yuan-Hua,linyh@tsinghua.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grants Nos. 51729201, 51532003)

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材料	基底	U_e/J·cm^–3	η/%	E_b/MV·m^–1	T_w/℃	疲劳次数	弯折次数
0.25BFO-0.3BTO-0.45STO^[6]	Nb:STO	112	80	490	–100—150	10⁸	—
BCT/BZT multilayer^[108]	Nb:STO	83.9	78.4	800	–100—200	10⁶	—
BZT^[21]	Nb:STO	78.7	80.5	697	–150—200	10⁶	—
PLZT^[109]	LNO/Ni	85	65	450	—	—	—
Mn:NBT-BT-BFO^[110]	Pt/F-mica	81.9	64.4	229	25—200	10⁹	10³(r= 4 mm)
NKBT/BSMT multilayer^[111]	Pt/F-mica	91	68	303	–50—200	10⁸	10⁴(r= 4 mm)
BZT^[112]	LSMO/STO/F-mica	65.1	72.9	615	–100—200	10⁶	10³(r= 4 mm)
PLZT^[113]	LNO/F-mica	40.2	58	200	30—180	10⁷	2 × 10³(r= 4 mm)

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Vol. 69, Issue 21 - 2020-11-05

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