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Abstract

As the substance carrier of nonlinear optical phenomenon, saturable absorber is an essential material for generating the ultrafast pulse laser. The saturable absorbers based on graphene, transition metal sulfides, topological insulators, black phosphorus and other two-dimensional (2D) materials exhibit different optical advantages. However, limitations of those single 2D materials as saturable absorbers exist. The nanomaterial heterojunction structure can combine the advantages of different 2D materials to achieve optical complementarity, and it also provides new ideas for generating the ultrafast laser with ultrashort pulse duration and high peak power. Here in this paper, the preparation methods, band alignment and the electronic transition mechanism of heterojunction saturable absorbers are summarized, and the recent research progress of ultrafast lasers based on 2D nano-heterostructures are also reviewed, including the wavelength, pulse width, repetition frequency and pulse energy. Therefore, 2D nano-heterostructure exhibits great potential applications in future optical modulator and optical switch.

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Authors and contacts

Corresponding author:Dong Hua-Feng,hfdong@gdut.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 62005053), the One-Hundred Young Talents Program of Guangdong University of Technology, China (Grant No. 220413293), and the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2020A1515011178, 2017B030306003)

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Material type	Type of Laser	Fabrication method	λ/nm	Pulse width	Repetition rate/MHz	Energy/nJ	Ref.
InAs/GaAs QDs	FL	MBE	1556.00	920.00 fs	8.16	—	[75]
GaN/InGaN	—	FIBE	408.00	1.40 ps	10.00		[78]
2D Te/BP	SL	LPE	1049.10	404.00 fs	42.10	6.9400	[65]
Te/Se	FL	HM	1500.00	889.00 fs	18.50	—	[76]
Te/Se	FL	HM	1000.00	11.70 ps	18.50	—	[76]
Graphene/MoS₂	SL	LPE	1061.56	306.00 ps	83.30	—	[34]
Graphene/MoS₂	SL	LPE	1063.00	92.00 fs	84.75	—	[66]
Graphene/MoS₂	SL	CVD	1037.20	236.00 fs	41.84	19.0000	[64]
Graphene/MoS₂	FL	CVD	1571.80	830.00 fs	11.93	—	[74]
Graphene/MoS₂	FL	LPE HM	1571.80	2.20 ps	3.47	—	[68]
Graphene/WS₂	FL	CVD	1593.50	55.60 ps	3.63	—	[79]
Graphene/WS₂	FL	CVD	1568.30	1.12 ps	8.83	0.5400	[69]
Graphene/WS₂	FL	LPE	1066.20	450.00 ps	19.68	0.1108	[80]
Graphene/Mo₂C	FL	CVD	1599.00	723.00 fs	15.33	0.7130	[70]
Graphene/BP	FL	LPE	1529.92	820.00 fs	7.43	—	[71]
Graphene/BP	FL	LPE	1531.00	148.00 fs	7.50	—	[71]
Graphene/Bi₂Te₃	FL	CVD	1565.60	1.80 ps	6.91	—	[56]
Graphene/Bi₂Te₃	FL	CVD	1049.10	144.30 ps	3.70	—	[56]
Graphene/Bi₂Te₃	FL	CVD	1568.07	837.00 fs	17.30	0.1780	[72]
Graphene/Bi₂Te₃	FL	CVD	1058.90	189.94 ps	79.13	—	[81]
Bi₂Te₃/FeTe₂	FL	SMD	1064.00	164.70 ps	15.02	—	[73]
Bi₂Te₃/FeTe₂	FL	SMD	1550.00	481.00 fs	23.00	—	[73]
MoS₂/graphene/WS₂	FL	CVD	1567.51	—	2.10	—	[82]
MoS₂/WS₂	FL	MSD	1560.00	154.00 fs	74.60	—	[57]
WS₂/MoS₂/WS₂	FL	MSD	1562.66	296.00 fs	36.46	—	[63]
MoS₂/Sb₂Te₃/MoS₂	FL	MSD	1554.00	286.00 fs	36.40	—	[77]
注: SL, solid-state laser; FL, fiber laser; MBE, molecular beam epitaxy; FIBE, focused ion beam etching; LPE, liquid phase exfoliation; HM, hydrothermal method; CVD, chemical vapour deposition; SMD, selective metal deposition; MSD, magnetron sputtering deposition; SASR, self-assembly solvothermal route.

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Vol. 69, Issue 18 - 2020-09-20

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