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Abstract

After more than 20 years of development, semiconductor spintronics has become an important and interdisciplinary research filed of spin-based physics, materials and phenomenon. Spin light emitting diode (spin LED) is one of the fascinating topics in semiconductor spintronic, and it is also one of devices in which the radiative recombination of spin-polarized carriers results in luminescence exhibiting a net circular polarization. The research of spin LED involves the studies of materials, structures, and spin based physics in spin injector and active region. The spin injection, spin transport, and spin detection are key factors for understanding the spin based physics in spin LED. Here in this paper, we comprehensively review the current research status and the latest results. Finally, we also discuss the future research trend.

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Authors and contacts

Corresponding author:Lu Yuan,yuan.lu@univ-lorraine.fr; Han Xiu-Feng,xfhan@iphy.ac.cn

Funds:Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0206200), the Key Program of the National Natural Science Foundation of China (Grant No. 51831012), the Key Joint Program of China-France of the National Natural Science Foundation (Grant No. 51620105004), the Strategic Priority Research Program (B) of Chinese Academy of Sciences (Grant No. XDB33000000), the Key Research Program of Frontier Sciences and the International Partnership Program of Chinese Academy of Sciences (Grant No. QYZDJ-SSW-SLH016), the Beijing Natural Science Foundation of China (Grant No. Z201100004220006), and the Joint ANR-NSFC SISTER Project (Grant Nos. ANR-11-IS10-0001, NNSFC61161130527)

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Cited By

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自旋注入端	LED结构	P_C/T	文献	时间
Fe	InGaAs QW	2%/300 K	Zhu等^[16]	2001
Fe/(Al)GaAs	GaAs QW	32%/4.5 K	Hanbicki等^[19]	2002
CoFe/Al₂O₃	GaAs bulk	21%/80 K	Motsnyi等.^[20]	2002
CoFe/MgO	GaAs QW	52%/100 K	Jiang等^[15]	2005
Co/Al₂O₃	InAs QD	15%/1.7 K	Lombez等^[21]	2007
CoFeB/MgO	GaAs QW	32%/100 K	Lu等^[8]	2008
Fe/AlO_x	GaAs QW	18%/80 K	Wu等^[22]	2010
CoFeB/MgO	GaAs QW	25%/25 K	Barate等^[18]	2014
CoFeB/MgO	GaAs QW	23%(Sputtering), 18%(MBE)/25 K	Barate等^[23]	2017

DownLoad: CSV

自旋注入端	LED结构	Pc/T	文献	时间
FeTb	InGaAs QW	0.75%/90 K	Gerhardt等^[24]	2005
MnGa	AlGaAs QW	~3%/20 K	Adelmann等^[25]	2006
FeTb	AlGaAs QW	~3%/300 K	Hövel等^[26]	2008
CoPt	SiGe QW	~3%/5 K	Grenet等^[27]	2009
CoPt	GaAs QW	~2.5%/20 K	Zarpellon等^[28]	2012
Ta/CoFeB/MgO	GaAs QW	~20%/25 K, ~8%/RT	Liang等^[29]	2014
MgO/CoFeB/Ta/CoFeB/MgO	GaAs QW	~10%/10 K	Tao等^[30]	2016
Mo/CoFeB/MgO	GaAs QW	~9.5%/10 K	Tao等^[31]	2018
Ta/CoFeB/MgO	GaAs QD	35%/9 K	Cadiz等^[32]	2018

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Vol. 69, Issue 20 - 2020-10-20

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