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Abstract

In this paper, neutron-induced displacement damage effects of AlGaN/GaN High electron mobility ransistor (HEMT) device and heterostructure on the Xi’an pulse reactor are studied. The equivalent 1 MeV neutron fluence is 1 × 10 ¹⁴n/cm ². The direct-current characteristics and low frequency noise characteristics of the HEMT deviceare used to characterize the performances before and after being irradiated by the neutrons, and then the experimental results are analyzed theoretically. The analysis results showed that the displacement damage effect caused by the neutron irradiation will introduce the bulk defects into the device. The bulk defects at the channel cause the electrical performance of the device to degrade through trapping electrons and scattering electrons, which are mainly manifested as the drift of positive threshold voltage, the decrease of output saturation drain current, and the increase of gate leakage current. In order to further confirm the effect of neutron irradiation on the defect density of the device, we implement the low-frequency noise test and the calculation of the device, and the results show that the defect density at the channel of the device increases from 1.78 × 10 ¹²cm ^–3·eV ^–1to 1.66 × 10 ¹⁴cm ^–3·eV ^–1, which is consistent with the results of the electrical characteristics test, indicating that the new defects introduced by neutron irradiation do degrade the electrical performance of the device. At the same time, the capacitor-voltage test is also carried out to analyze the Schottky heterojunctions before and after neutron irradiation. It is found that the channel carrier concentration is significantly reduced after irradiation, and the flat band voltage also drifts positively. The analysis shows that after irradiating the device with neutrons, a large number of defects will be generated in the channel, and these defects will affect the concentration and mobility of the channel carriers, which in turn will influence the electrical performance of the device. These experimental results can be used for designing the AlGaN/GaN high electron mobility transistor for radiationhard reinforcement.

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Corresponding author:Guo Hong-Xia,guohxnint@126.com

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直流测试	参数V/V
转移特性	V_G= –6—2,V_D= 10,V_STEP= 0.1
输出特性	V_D= 0—10,V_G= –4—1,V_STEP= 1.0
栅特性	V_G= –10—2,V_D=V_S= 0
低频噪声测试	V_G= –3.5—–2.0,V_STEP= 0.1, V_D= 10,V_S= 0

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参数	辐照前	辐照后
S_Vfb/V²·Hz^–1	1.56 × 10^–9	1.45 × 10^–7
N_it/cm^–3·eV^–1	1.78 × 10¹²	1.66 × 10¹⁴

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直流测试	参数设置:V/V,F/kHz
转移特性	V_G= –6—2,V_D= 10,V_STEP= 0.1
输出特性	V_D= 0—10,V_G= –4—1,V_STEP= 1
栅特性	V_G= –10—2,V_D=V_S= 0
C-V测试	V_G= –6—1,V_D= 0,V_STEP= 0.05 F=10, 50, 100, 500, 1000, 2000

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Vol. 69, Issue 20 - 2020-10-20

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