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Abstract

The two-dimensional (2D) materials represented by graphene and boron nitride provide an excellent platform for the study of thermal conduction and the interfacial thermal resistance in low-dimensional system. Recent studies recover exotic physics behind the novel thermal transport properties of 2D materials, such as length effect, dimensional effect, isotopic effect, anisotropic effect, etc. In this review, we introduce the recent progress of thermal properties in 2D materials in the last decade. The principle and development of thermal conduction measurement technologies used in 2D materials are introduced, followed by the experimental progress of thermal conduction and interfacial thermal resistance. Special attention is paid to the abnormal thermal transport and relevant physical problems. Finally, we present thermal management and heat dissipation in 2D electronic devices, summarize and point out the problems and bottlenecks, and forecast the future research directions and foregrounds.

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Authors and contacts

Corresponding author:Xu Xiang-Fan,xuxiangfan@tongji.edu.cn

Funds:Project supported by the Key Research and development Plan of Guangdong Province (Grant No. 2020B010190004), the Key Special Project of the National Key Research and Development Plan of “Strategic Advanced Electronic Materials” (Grant No. 2017YFB0406000), and the National Natural Science Foundation of China (Grant Nos. 11674245, 11890703, 11935010)

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Cited By

DownLoad: Full-Size Img PowerPoint

制备方式	石墨烯层数	热导率κ/W·(m·K)^–1	备注
拉曼法
机械剥离^[31]	1层	~4840—5300 (室温)	数值高估, 见本节文字部分
机械剥离^[97]	1层	~3080—5150 (室温)	数值高估, 见本节文字部分
化学气相沉积^[66]	1层	~2500 +1100/–1050 (T= 350 K)	/
化学气相沉积^[66]	1层	~1400 +500/–480 (T= 500 K)	/
化学气相沉积^[98]	1层	~2600 — 3100 (T= 350 K)	/
机械剥离^[63]	1层	~630 (T= 660 K)	/
机械剥离^[99]	1层	~1800 (T= 325 K)	/
机械剥离^[99]	1层	~710 (T= 500 K)	/
化学气相沉积^[69]	1层	~850—1100 (T= 303—644 K)	/
机械剥离^[69]	1层	~1500 (T= 330—445 K)	/
机械剥离^[69]	2层	~970 (T= 303—630 K)	/
悬空热桥法
化学气相沉积^[100]	1层	~190(T= 280 K,L= 0.5 μm)	/
化学气相沉积^[43]	2层	~560—620(室温,L= 5 μm)	/
化学气相沉积^[17]	1层	~1689—1831(T= 300 K,L= 9 μm)	/
SThM
化学气相沉积^[85]	1层	~2100—2430(T= 335 K)	/

DownLoad: CSV

制备方式	氮化硼薄膜层数	测量方法	热导率(室温/300 K)
制备方式	氮化硼薄膜层数	测量方法	κ/(W(m·K)^–1)
机械剥离^[120]	5层	微桥电阻温度计法	~250
机械剥离^[120]	11层	微桥电阻温度计法	~360
化学气相沉积^[62]	9层	拉曼法	~227—280
化学气相沉积^[57]	2.1 nm	拉曼法	~223
化学气相沉积^[121]	10 nm/20 nm	稳态/瞬态	~100
机械剥离^[41]	2层	热桥法	~484 +141/–24
机械剥离^[44]	4层	热桥法	~286
机械剥离^[56]	1层	拉曼法	751 ± 340
机械剥离^[56]	2层	拉曼法	646 ± 242
机械剥离^[56]	3层	拉曼法	602 ± 247

DownLoad: CSV

制备方式	硫化钼薄膜层数	测量方法	热导率 (300 K/室温)
制备方式	硫化钼薄膜层数	测量方法	κ/(W·(m·K)^–1)
悬空
化学气相沉积^[59]	11层	拉曼法	~52
机械剥离^[60]	1层	拉曼法	34.5 ± 4
机械剥离^[126]	4层	热桥法	~44—45
机械剥离^[126]	7层	热桥法	~48—52
机械剥离^[127]	1层	拉曼法	84 ± 17
机械剥离^[127]	2层	拉曼法	77 ± 25
机械剥离^[54]	4层	电子束自加热	34 ± 6
机械剥离^[54]	5层	电子束自加热	30 ± 3
化学气相沉积^[128]	1层	拉曼法	13.3 ± 1.4
化学气相沉积^[128]	2层	拉曼法	15.6 ± 1.5
化学气相沉积^[47]	1层	热桥法	~21—24
化学气相沉积^[18]	1层	拉曼法	60.3 ± 5.2
化学气相沉积^[18]	2层	拉曼法	38.4 ± 3.1
化学气相沉积^[18]	3层	拉曼法	44.8 ± 5.9
化学气相沉积^[18]	4层	拉曼法	36.9 ± 4.9
衬底
机械剥离^[129]	1层	拉曼法	~62.2
机械剥离^[65]	4层	拉曼法	60.3 ± 5

DownLoad: CSV

制备方式	薄膜层数	测量方法	热导率 (300 K/室温)
制备方式	薄膜层数	测量方法	κ/(W·(m·K)^–1)
硒化钼
机械剥离^[127]	1层	拉曼法	59 ± 18
机械剥离^[127]	2层	拉曼法	42 ± 13
机械剥离^[70]	45 nm	拉曼法	11.1 ± 0.4
机械剥离^[70]	140 nm	拉曼法	20.3 ± 0.9
机械剥离^[132]	5 nm	拉曼法	6.2 ± 0.9
机械剥离^[132]	36 nm	拉曼法	10.8 ± 1.7
硒化钽
机械剥离^[133]	45 nm	拉曼法	~9
机械剥离^[133]	55 nm	拉曼法	~11
硫化钨
化学气相沉积^[134]	1层	拉曼法	~32
化学气相沉积^[134]	2层	拉曼法	~53
化学气相沉积^[18]	1层	拉曼法	74.8 ± 17.2
硒化钨
化学气相沉积^[18]	1层	拉曼法	66 ± 20.9
碲化钨
机械剥离^[135]	220 nm	TDTR	~2
机械剥离^[136]	11.2 nm	拉曼	~0.639—0.743
硫化铼
机械剥离^[137]	150 nm	TDTR	~50—70

DownLoad: CSV

界面结构	室温界面热导	界面结构	室温界面热导
界面结构	G_int/MW·(m²·K)^–1	界面结构	G_int/MW·(m²·K)^–1
石墨烯 (G)		G/h-BN^[235]	~17
石墨烯 (G)		MoS₂/h-BN^[236]	~52.2
SiO₂/G/SiO₂^[237]	~83—179	硫化钼 (MoS₂)、硒化钼 (MoSe₂)
G/SiO₂^[238]	~50	硫化钼 (MoS₂)、硒化钼 (MoSe₂)
G/Al₂O₃^[239]	~17	MoS₂/SiO₂or AlN^[240]	~15
Au/Ti/G/SiO₂^[241]	~25	MoS₂/Au^[127]	~0.44—0.74
Au/Ti/G/SiO₂^[196]	~20	MoS₂/SiO₂^[129]	~1.94
Al/G/Si^[242]	~62—65	MoS₂/SiO₂^[243]	~14
Al/G/SiO₂^[242]	~21—24	MoS₂/SiO₂^[244]	~21
Au/Ti/G/sapphire^[245]	~33.5	MoSe₂/SiO₂^[127]	~0.09—0.13
Au/Ti/G/diamond^[245]	~6.2	MoSe₂/SiO₂^[243]	~2
G/Au^[76]	~23	黑磷 (BP)
G/Al^[76]	~27	黑磷 (BP)
G/Ti^[76]	~31	BP/SiO_X^[246]	~21.7—114
G/Au^[66]	~18.8—44	BP/SiO_X^[247]	~202—60
氮化硼 (h-BN)		硒化钨 (WSe₂)
h-BN/SiO₂/Si^[248]	~8.3	WSe₂/Si/SiO₂^[249]	~10—32
Metal/h-BN/SiO₂^[234]	~29—63	WSe₂/SiO₂^[250]	~22

DownLoad: CSV

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Vol. 69, Issue 19 - 2020-10-05

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