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The leap in communication technology in recent years has brought new challenges to the compactness, modulation speed, working bandwidth and control efficiency of modulation equipment. The discovery of graphene has led the two-dimensional materials to develop rapidly, and a series of new materials have continuously emerged, such as MXene, black phosphorus, transition metal sulfides, etc. These new two-dimensional materials have excellent nonlinear optical effects, strong light-matter interaction, and ultra-wide working bandwidth. Using their thermo-optic effect, nonlinear effect and the combination with optical structure, the needs of ultra-fast modulation in optical communication can be met. Compact, ultra-fast, and ultra-wide will become the tags for all-optical modulation of two-dimensional materials in the future. This article focuses on all-optical devices based on thermo-optical effects and non-linear effects of two-dimensional materials, and introduces fiber-type Mach-Zehnder interferometer structures, Michelson interferometer structures, polarization interferometer structures, and micro-ring structures. In this paper, the development status of all-optical devices is discussed from the perspectives of response time, loss, driving energy, extinction ratio, and modulation depth. Finally, we review the latest developments, analyze the challenges and opportunities faced by all-optical devices, and propose that all-optical devices should be developed in the direction of ring resonators and finding better new two-dimensional materials. We believe that all-optical devices will maintain high-speed development, acting as a cornerstone to promote the progress of all-optical systems.
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Keywords:
- all-optical devices/
- two-dimensional material/
- optical nonlinear effect/
- thermo-optic effect
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二维材料
种类能隙/eV 厚度/Å 导热系数
/W·m–1·K-1饱和吸收强度Is/GW·cm–2 三阶极化率
$ {\rm{Im}}\chi^{(3)} $/esu非线性折射率n2/cm2·W–1 载流子弛豫
时间Ref. graphene 0 3.35 1600—5300 583 –8.7 × 10–15 10–7 200 fs—1 ps [84—86] TMDs 1—2 6.04—6.91 19—112 381—590 –(0.145—1.38) × 10–14 10–12 1 ps—400 ps [84,85] BP 0.3—2.2 5.24—5.29 6—89 459 –7.85 × 10–15 6.8 × 10–9 360 fs—1.36 ps [84,89,87] MXene $ < 0.2 $ — 298—460 10 10–13 –10–16 — [82,88] 全光器件结构 二维材料类型 耦合形式 上升时间 下降时间 消光比/dB 控制效率/$\pi$·mW–1 Ref. MZI graphene MF 4.00 ms 1.40 ms 20 0.091 [101] Mxene MF 4.10 ms 3.55 ms 18.53 0.061 [100] phosphorene MF 2.50 ms 2.10 ms 17 0.029 [75] boron MF 0.48 ms 0.69 ms 10.5 0.01329 [90] WS2 MF 7.30 ms 3.50 ms 15 0.0174 [102] MI antimonene MF 3.20 ms 2.90 ms 25 0.049 [103] bismuthene MF 1.56 ms 1.53 ms 25 0.076 [104] MXene MF 2.30 ms 2.10 ms 27 0.034 [105] graphene SPTCF 55.80 ms 15.50 ms 7 0.0102 [108] PI MoS2 TF 324.5 μs 353.1 μs 10 NA [106] micro-ring graphenen MF 294.7 μs 212.2 μs 13 0.115 [107] MXene MF 306 μs 301 μs 12.9 0.196 [109] 注: MF, microfiber. TF, Thin film. SPTCF, side-polished twin-core fiber. 非线性效应类型 二维材料类型 耦合
形式上升时间 下降时间 消光比/dB 调制深度/% 控制效率
π·mW–1转换效率/dB 调谐范围/nm Ref. SA graphene MF ~0 ~0 — 73.08, 79.11, 81.38
(1310 nm, 1550 nm, 1610 nm)— — — [125] BP MF ~0.2 ns ~0.4 ns — 4.7 — — — [116] Kerr effect graphene MF 3 μs 100 μs — — — — — [118] bismuthine MF — — 22 — — — — [123] Topological insulators MF — — 14 — 0.0125 — — [124] BP MF — — 26 — 0.0081 — — [122] antimonene MF — — 12 — 0.0071 126 FWM bismuthine MF — 17 — — -65 4 [123] Topological insulators MF — — — — — -34 6.4 [124] BP MF — — 10 — — -60 3 [122] antimonene MF — — 13 — — -65 5.5 [126] MXene MF — — 13 — — -59 5 [127] graphene MF — — 13 — — -59 5 [128] 注: MF, microfiber. SA, saturable absorption. FWM, four-wave-mixing. -
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