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Abstract

Transparent conductive oxide (TCO) films and transparent oxide semiconductor (TOS) films have been widely adopted in solar cells, flat panel displays, smart windows, and transparent flexible electronic devices due to their advantages of high transparency and good conductivity and so on. Most of TCO and TOS films are mainly derived from indium oxide, zinc oxide and tin oxide. Among these materials, the In element is toxic, rare and expensive for indium oxide film, which will cause environmental pollution; zinc oxide film is sensitive to acid or alkali etchants, resulting in a poor formation of film patterning; tin oxide film is not only non-toxic, eco-friendly, and cheap but also has good electrical properties and strong chemical stability. Thus, tin oxide has a great potential for developing the TCO and TOS films. At present, the film is prepared mainly by the vacuum deposition technique. The drawbacks of this technique are complex and expensive equipment system, high energy consumption, complicated process and high-cost production. However, compared with the vacuum deposition technique, the sol-gel method has attracted extensive attention because of its virtues such as simple process and low cost. In this paper, we review the development status and trend of TCO and TOS films. First, the structural characteristics, conductive mechanism, element doping theory and carrier scattering mechanism of tin oxide thin films are introduced. Then the principle of sol-gel method and correlative film fabrication techniques are illustrated. Subsequently, the application and development of tin oxide-based thin films prepared by sol-gel method in n-type transparent conductive films, thin-film transistors and p-type semiconductor films in recent years are described. Finally, current problems and future research directions are also pointed out.

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Authors and contacts

Corresponding author:Tao Hong,tao.h@scut.edu.cn; Ning Hong-Long,ninghl@scut.edu.cn;

Funds:Project supported by the Major project of Basic and Applied Basic Research in Guangdong Province, China(Grant No. 2019B030302007), the National Natural Science Foundation of China (Grant Nos. 51771074, 61574061), Major Integration Project of the National Natural Science Foundation of China (Grant No.U1601651), Guangzhou Science and Technology Project, China (Grant No. 201904010344), Special Funds for Basic Scientific Research Operating Expenses of Central Universities, China (Grant No. 2019MS012), Special Fund for "Climbing Plan" of Science and Technology Innovation Cultivation for Guangdong University Students in 2019 (Grant Nos. pdjh2019a0028, pdjh2019b0041), National Innovation and Entrepreneurship Training Program for College Students (Grant Nos. 201910561005, 201910561007), and the South China University of Technology BaiBu Ladder Climbing Program Research Project (Grant Nos. j2tw201902475, j2tw201902203).

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References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
[44]
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
[56]
[57]
[58]
[59]
[60]
[61]
[62]
[63]
[64]
[65]
[66]
[67]
[68]
[69]
[70]
[71]
[72]
[73]
[74]
[75]
[76]
[77]
[78]
[79]
[80]
[81]
[82]

Cited By

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Element	Electroneg- ativity	BDE of X-H/kJ·mol^–1	Atomic radius/nm	BDE of X-Sn/kJ·mol^–1
F	4.0	569.68	0.42	476
Cl	3.0	431.36	0.79	350
Br	2.8	366.16	1.2	337
BDE: Bond dissociation energy

DownLoad: CSV

Doping elements	Conductivity/Ω^–1·cm^–1	Carrier density /cm^–3	Hall Mobility /cm²·V^–1·s^–1	Transmittance/%	Technique	Ref.
F	0.33 × 10³	2.62 × 10²⁰	7.96	86	spray pyrolysis	[51]
F	1.43 × 10³	1.10 × 10²¹	8.1	90	dip-coating	[52]
Li, F	2.70 × 10³	5.62 × 10²⁰	29.1	70	spray pyrolysis	[53]
P, F	4.0 × 10⁵	8.30 × 10²⁶	0.0032	86	spray pyrolysis	[54]
Sb	0.36 × 10³	6.37 × 10²¹	0.347	61	spin-coating	[55]
Sb	3.50 × 10³	1.68 × 10²¹	12.03	—	spray pyrolysis	[56]
Ta	0.50 × 10³	1.30 × 10²⁰	29.26	80	spray pyrolysis	[57]
Pr	0.26 × 10³	8.70 × 10¹⁹	18.75	80	spray pyrolysis	[59]
W	0.17 × 10³	7.60 × 10¹⁹	14.2	90	dip-coating	[60]
Nb	0.23 × 10³	5.00 × 10¹⁹	25	70	spray pyrolysis	[61]

DownLoad: CSV

Solute	Dopant	Concentration /mol·L^–1	Substrate	Channel thickness/nm	Annealing temperature /℃	Mobility /cm²·V^–1·s^–1	I_on/I_off	SS/V·dec^–1	Ref.
SnCl₂·2H₂O	—	0.02	SiO₂/Si	3.8	500	11.2	6.8 × 10⁶	0.78	[63]
SnCl₂·2H₂O	—	0.167	HfO₂/Mo	9.2	300	99.16	1.7 × 10⁸	0.114	[64]
SnCl₂·2H₂O	Ga(NO₃)₃ ·xH₂O	0.12	SiO₂/Si	—	400	4.1	6.6 × 10⁶	0.77	[65]
SnCl₂·2H₂O	—	0.03	SiO₂/Si	—	500	12.18	5 × 10⁷	1.17	[66]
SnCl₂·2H₂O	—	0.1	ZrO₂/ITO	22	400	103	10⁴—10⁵	0.3	[67]
C₁₆H₃₀O₄Sn	—	0.5	Al₂O₃/ITO	15	350	96.4	2.2 × 10⁶	0.26	[68]

DownLoad: CSV

Solute	Dopant	Resistivity /Ω·cm	Carrier density/cm^–3	Hall Mobility /cm²·V^–1·s^–1	Bandgap/eV	Technique	Ref.
SnCl₂·2H₂O	AlCl₃	3.6 × 10^–2	6.7 × 10¹⁸	25.90	4.11	spray pyrolysis	[74]
SnCl₂·2H₂O	Ga(NO₃)₃·H₂O	1.6	1.70 × 10¹⁸	6.34	3.83	spin-coating	[75]
SnCl₂·2H₂O	InCl₃·4H₂O	20.4	1.85 × 10¹⁷	1.57	3.8	dip-coating	[76]
SnCl₂·2H₂O	InCl₃·4H₂O, GaCl₃	0.17	9.5 × 10¹⁷	39.2	3.38	spray pyrolysis	[77]
SnCl₂·2H₂O	FeCl₃·6H₂O	660	1.4 × 10¹⁵	6.75	3.75	dip-coating	[78]
SnCl₂·2H₂O	MgCl₂·6H₂O	2.5 × 10⁴	10¹⁴	1.6	3.73	spin-coating	[79]
SnCl₂·2H₂O	MnCl₂	359.1	6.72 × 10¹⁴	6.14	3.85	dip-coating	[80]
SnCl₂·2H₂O	CoCl₂·6H₂O	140	1.47 × 10¹⁵	8.25	3.81	spin-coating	[81]

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
[44]
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
[56]
[57]
[58]
[59]
[60]
[61]
[62]
[63]
[64]
[65]
[66]
[67]
[68]
[69]
[70]
[71]
[72]
[73]
[74]
[75]
[76]
[77]
[78]
[79]
[80]
[81]
[82]

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Vol. 69, Issue 22 - 2020-11-20

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