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Abstract

In this work, thermal annealing effects of InGaAs (1.0 eV) and InGaAs (0.7 eV) sub-cells for inverted metamorphic four junction (IMM4J) solar cells after being irradiated by 1 MeV electrons are investigated by using light I- Vcharacteristic, dark I- Vcharacteristic and spectral response. Annealing temperature range is 60–180 ℃ and annealing time is 0-180 min. The results indicate that the open-circuit voltage V _oc, short-circuit current I _sc, and maximum power P _maxof two sub-cells are gradually recovered with annealing time increasing, and the rate of recovery increases with annealing temperature increasing. Besides, the recovery rate of InGaAs (1.0 eV) sub-cell is less than that of InGaAs (0.7 eV) sub-cell under the same annealing temperature and time. Double exponential model is used to fit the dark I- Vcurve for the key parameters (the serial resistant R _s, the parallel resistant R _sh, the diffusion current I _s1and the recombination current I _s2). It is found that R _s, I _s1and I _s2of two sub-cells decrease gradually and R _shincreases during annealing and the rate of recovery increases with annealing temperature rising. However, the recovery of I _s1and I _s2of InGaAs(1.0 eV) are much greater than that of InGaAs(0.7 eV). The equivalent model between short-circuit current density ( J _sc) and defect concentration (N) induced by irradiation and annealing is established. Nchanges follow the first reaction kinetics, and the rate constant follows the Arrhenius equation with the annealing temperature. Therefore, the thermal annealing activation energy of InGaAs(1.0 eV) and InGaAs(0.7 eV) sub-cells are 0.38 eV and 0.26 eV, respectively. These efforts will contribute to the IMM4J solar cells, in particular, to space-based applications.

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Authors and contacts

Corresponding author:Qi Chun-Hua,qichunhua@hit.edu.cn; Liu Chao-Ming,cmliu@hit.edu.cn;

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 11805045, 61704039, 61771167, 11775061), the State Key Laboratory for Environmental Simulation and Effects of Intense Pulsed Radiation, China (Grant Nos. SKLIPR2015, SKLIPR1912), and the Research and Innovation Fund of Harbin Institute of Technology, China (Grant Nos. HIT.NSRIF.2019007, HIT.NSRIF.20190028)

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References

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InGaAs (1.0 eV)	V_oc/V	I_sc/mA	P_max/mW
未辐照	0.5089	18.25	7.30
辐照后	0.3093	11.57	3.56
剩余率	60.8%	63.4%	48.8%

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InGaAs (0.7 eV)	V_oc/V	I_sc/mA	P_max/mW
未辐照	0.2529	11.660	1.940
辐照后	0.1428	6.950	0.653
剩余率	56.5%	59.6%	33.7%

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InGaAs (1.0 eV)	R_s/Ω	R_sh/Ω	I_s1/A	I_s2/A
未辐照	1.5	4.3 × 10⁴	3.6 × 10^–7	4.2 × 10^–7
辐照后	6.2	5.3 × 10³	6.4 × 10^–5	6.5 × 10^–5
剩余率	4.13%	0.123%	178%	155%

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InGaAs (0.7 eV)	R_s/Ω	R_sh/Ω	I_s1/A	I_s2/A
未辐照	2.9	1.3 × 10⁴	2.7 × 10^–5	3.3 × 10^–5
辐照后	7.5	1.4 × 10³	1.4 × 10^–4	1.9 × 10^–4
剩余率	2.59%	0.108%	5.19%	5.76%

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InGaAs (1.0 eV) 退火温度	未辐照J_sc/mA)	退火时间J_sc/min·mA^–1
InGaAs (1.0 eV) 退火温度	未辐照J_sc/mA)	0	3	5	10	15	30	60	120	180
60 ℃	13.57	10.26	10.26	10.28	10.29	10.31	10.38	10.41	10.48	10.53
90 ℃	13.31	10.19	10.21	10.23	10.28	10.30	10.34	10.39	10.41	10.46
120 ℃	13.75	10.41	10.46	10.49	10.57	10.65	10.78	10.79	10.81	10.84
150 ℃	13.51	10.31	10.43	10.59	10.84	11.07	11.68	11.73	11.83	11.98
180 ℃	13.55	10.38	10.72	10.96	11.46	11.90	12.50	12.67	12.85	12.88

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InGaAs (0.7 eV) 退火温度	未辐照J_sc/mA	退火时间J_sc/min·mA^–1
InGaAs (0.7 eV) 退火温度	未辐照J_sc/mA	0	3	5	10	15	30	60	120	180
60 ℃	8.17	6.27	6.27	6.27	6.31	6.32	6.36	6.40	6.45	6.47
90 ℃	8.33	6.46	6.47	6.48	6.53	6.53	6.55	6.59	6.63	6.67
120 ℃	8.28	6.19	6.21	6.22	6.24	6.28	6.33	6.35	6.42	6.44
150 ℃	8.24	6.15	6.18	6.21	6.25	6.29	6.45	6.71	6.79	6.82
180 ℃	8.25	6.2	6.25	6.3	6.44	6.51	6.8	7.34	7.59	7.69

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退火温度	α[InGaAs (1.0 eV)/s^–1]	α[InGaAs (0.7 eV)/s^–1]
60 ℃	1.74 × 10^–3	1.47 × 10^–3
90 ℃	4.09 × 10^–3	2.43 × 10^–3
120 ℃	7.33 × 10^–3	4.70 × 10^–3
150 ℃	2.52 × 10^–2	7.38 × 10^–3
180 ℃	5.72 × 10^–2	1.82 × 10^–2

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Vol. 69, Issue 22 - 2020-11-20

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