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Abstract

The experiment of neutron single event effect was carried out at China Spallation Neutron Source (CSNS) back-n on 13 kinds of commercial SRAM. The single event upset (SEU) cross section of each device was obtained, and multiple cell upsets (MCU) were extracted from the SEUs using a statistical method without layout information. The influences of the test pattern, feature size and device layout on the SEU cross section and MCU were studied. The results show that the test pattern has little influence on the SEU cross section of the devices, but has a great influence on the MCU ratio of some devices. The feature size has influence both on the SEU cross section and the MCU ratio of the devices. The influence on SEU cross section is not definite. The influence on the MCU ratio is definite. Both the ratio and the maximum size of the MCUs increase with the decrease of the feature size. The difference of layout has great influence both on the SEU cross section and the MCU ratio of the device. In addition, compared with the results of plateau irradiation, the ratio of MCU in CSNS back-n is less than that of plateau irradiation. There are two reasons for this difference. One is that the energy spectrum of CSNS back-n is softer than that of the atmospheric neutron. The other is the neutron beam at CSNS back-n is perpendicular to the device under test. Therefore, evaluating the atmospheric neutron SEE using CSNS back-n line may underestimate the MCU ratio of the device under test. The experimental data, analytical methods and results obtained in this paper are valuable for the researchers to carry out the atmospheric neutron SEE test and the evaluation of devices on atmospheric neutron SEE.

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Authors and contacts

Corresponding author:Wang Xun,wangxun@nint.ac.cn

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References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]

Cited By

DownLoad: Full-Size Img PowerPoint

型号	制造商	容量/bits	特征尺寸/nm	工作电压/V
HM628512A	HITACHI	4 M (512 K × 8)	500	5
HM628512B	HITACHI	4 M (512 K × 8)	350	3.3
HM62V8100	RENESAS	8 M (1 M × 8)	180	3.3
IS62WV1288	ISSI	1 M (128 K × 8)	130	3.3
IS64WV25616	ISSI	4 M (256 K × 16)	65	3.3
IS61WV204816	ISSI	32 M (2 M × 16)	40	3.3
CY62126V	Cypress	1 M (64 K × 16)	350	3.0
CY62126BV	Cypress	1 M (64 K × 16)	250	3.0
CY62126DV	Cypress	1 M (64 K × 16)	130	3.0
CY7C1318AV18	Cypress	18 M (1 M × 18)	150	1.8
CY7C1318BV18	Cypress	18 M (1 M × 18)	90	1.8
CY7C1318KV18	Cypress	18 M (1 M × 18)	65	1.8
M328C	国产	256 K (32 K × 8)	65	1.8

DownLoad: CSV

型号	特征尺寸/nm	测试图形	容量/Mbit	注量(>10 MeV)/10⁸n·cm^–2	翻转数/#	翻转截面/10^-14cm²·bit^–1	不确定度/%
HM628512A	500	0x00H	12	5.54	176	2.52	12.88
		0x55H	12	7.21	262	2.89	12.13
		0xAAH	12	5.38	215	3.18	12.47
		0xFFH	12	5.36	205	3.04	12.56
HM628512B	350	0x00H	12	5.71	207	2.88	12.54
		0x55H	8	7.03	197	3.34	12.64
		0xAAH	12	8.97	303	2.69	11.92
		0xFFH	12	3.26	114	2.78	14.03
HM62V8100	180	0x00H	24	5.31	343	2.57	11.75
		0x55H	24	5.29	367	2.76	11.67
		0xAAH	24	5.29	387	2.91	11.61
		0xFFH	24	5.36	342	2.53	11.76
IS62WV1288	130	0x00H	1	9.52	55	5.51	17.05
		0xAAH	3	8.05	116	4.58	13.97
		0xFFH	3	10.20	151	4.68	13.24
IS64WV25616	65	0x00H	8	4.76	271	6.79	12.08
		0x55H	8	4.76	339	8.49	11.77
		0xAAH	8	5.23	381	8.68	11.63
		0xFFH	8	4.50	275	7.28	12.06
IS61WV204816	40	0x00H	64	4.76	534	1.67	11.30
		0x55H	64	4.76	523	1.64	11.32
		0xAAH	64	4.76	589	1.84	11.22
		0xFFH	64	6.35	707	1.66	11.10
CY62126V	350	0x55H	3	9.88	64	2.06	16.29
CY62126V	350	0xAAH	3	9.88	71	2.28	15.81
CY62126BV	250	0x55H	3	128.00	516	1.28	11.33
CY62126DV	130	0x00H	3	10.40	115	3.53	14.00
		0x55H	3	10.60	139	4.16	13.45
		0xAAH	3	10.40	141	4.30	13.41
		0xFFH	3	9.04	106	3.73	14.26
CY7C1318AV18	150	0X55H	32	5.12	1293	7.52	10.80
CY7C1318BV18	90	0X55H	32	4.69	381	2.42	11.63
CY7C1318KV18	65	0X55H	32	5.09	374	2.19	11.65
M328C	65	0X55H	0.75	116	167	1.84	13.00

DownLoad: CSV

型号	特征尺寸/nm	不同测试图形时MCU占比				最大MCU位数
型号	特征尺寸/nm	0x00	0x55H	0xAAH	0xFFH	最大MCU位数
HM628512A	500	0	0	0	0	1
HM628512B	350	0	0	0	0	1
HM62V8100	180	2.33%	5.94%	1.09%	4.68%	2
IS62WV1288	130	—	0	4.65%	0	2
IS64WV25616	65	9.59%	9.14%	6.01%	0.73%	3
IS61WV204816	40	28.29%	24.09%	28.52%	25.00%	7
CY62126V	350	0	0	0	0	1
CY62126BV	250	0	0	0	0	1
CY62126DV	130	40.00%	35.97%	35.46%	45.28%	3
CY7C1318AV18	150	—	36.13%	—	—	4
CY7C1318BV18	90	—	42.31%	—	—	6
CY7C1318KV18	65	—	56.80%	—	—	7
M328C	65	—	14.37%	—	—	2

DownLoad: CSV

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[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]

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Vol. 69, Issue 16 - 2020-08-20

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