- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

With the increasing demand for high-frequency, high-power and high-temperature microwave applications, AlGaN/GaN high electron mobility transistors have received much attention due to their promising material features such as wide band gaps, high-concentration two-dimensional electron gas (2DEG), strong electric field, at which the electron velocity is saturated, and high operating temperature. The 2DEG mobility at AlGaN/GaN interface is a key parameter to describe characteristics of high electron mobility transistor, and the mobility of 2DEG in AlGaN/GaN high electron mobility transistor is determined by a variety of scattering mechanisms in which the polar optical phonon scattering caused by electrostatic field between uneven polar positive and negative charges is responsible for mobility limitation in a 2DEG at high temperature. Calculation of polar optical phonon scattering is carried out by the analytical model in which Fang-Howard variational wave function and Fermi’s golden rule are used. The interaction between 2DEG and phonon is described by scattering matrix element for the transition, in which phonon occupation number is given by Bose-Einstein statistics. The scattering time is derived by neglecting the in-scattering, and the numerically calculated energy-dependent scattering time is averaged according to Fermi statistics. At temperatures in a range of 200–400 K and two-dimensional electron gas concentration in a range of 6 × 10 ¹¹–1 × 10 ¹³cm ^–2, the mobility varying with temperature is analyzed. It is found that the mobility limited by polar phonon scattering decreases monotonically with the temperature rising and their dependence is well approximated by a function of $\mu_{\rm PO} = AT^{-\alpha} ~ (\alpha = 3.5)$ as the phonon occupation number increases with temperature rising. Furthermore, the polar optical phonon scattering is enhanced by greater electron concentration as a result of increased interaction between phonon and 2DEG. The mobility limit is calculated separately by emission phonon and absorption phonon, the results indicate that absorption phonon is predominant, which is attributed to high optical phonon energy in GaN. The mobility of polar optical phonon scattering is further studied by changing the optical phonon energy, which shows that the room temperature mobility of 2DEG can be improved by increasing the energy of polar optical phonon.

Keywords:

Authors and contacts

Corresponding author:Yao Ruo-He,phrhyao@scut.edu.cn

FullText HTML: translate this paragraph

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]

Cited By

DownLoad: Full-Size Img PowerPoint

参数	符号/单位	取值
介电常数(低频)	ε/F·m^–1	10.4ε₀^[18]
介电常数(高频)	ε_∞/F·m^–1	5.47ε₀^[18]
电子有效质量	m^*/kg	0.22m₀^[19]
声子能量	ћω_LO/meV	91.2^[19]

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]

[1]	Zhou Shu-Xing, Fang Ren-Feng, Wei Yan-Feng, Chen Chuan-Liang, Cao Wen-Yu, Zhang Xin, Ai Li-Kun, Li Yu-Dong, Guo Qi.Structure parameters design of InP based high electron mobility transistor epitaxial materials to improve radiation-resistance ability. Acta Physica Sinica, 2022, 71(3): 037202.doi:10.7498/aps.71.20211265
[2]	Ma Song-Song, Shu Tian-Yu, Zhu Jia-Qi, Li Kai, Wu Hui-Zhen.Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas. Acta Physica Sinica, 2019, 68(16): 166801.doi:10.7498/aps.68.20191074
[3]	Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang.Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer. Acta Physica Sinica, 2017, 66(16): 167301.doi:10.7498/aps.66.167301
[4]	Wang Xian-Bin, Zhao Zheng-Ping, Feng Zhi-Hong.Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure. Acta Physica Sinica, 2014, 63(8): 080202.doi:10.7498/aps.63.080202
[5]	Li Jia-Dong, Cheng Jun-Jie, Miao Bin, Wei Xiao-Wei, Zhang Zhi-Qiang, Li Hai-Wen, Wu Dong-Min.Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors. Acta Physica Sinica, 2014, 63(7): 070204.doi:10.7498/aps.63.070204
[6]	Zhang Yang, Gu Shu-Lin, Ye Jian-Dong, Huang Shi-Min, Gu Ran, Chen Bin, Zhu Shun-Ming, Zhen You-Dou.Two-dimensional electron Gas in ZnMgO/ZnO heterostructures. Acta Physica Sinica, 2013, 62(15): 150202.doi:10.7498/aps.62.150202
[7]	Wang Wei, Zhou Wen-Zheng, Wei Shang-Jiang, Li Xiao-Juan, Chang Zhi-Gang, Lin Tie, Shang Li-Yan, Han Kui, Duan Jun-Xi, Tang Ning, Shen Bo, Chu Jun-Hao.Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure. Acta Physica Sinica, 2012, 61(23): 237302.doi:10.7498/aps.61.237302
[8]	Li Ming, Zhang Rong, Liu Bin, Fu De-Yi, Zhao Chuan-Zhen, Xie Zhi-Li, Xiu Xiang-Qian, Zheng You-Dou.Study of Rashba spin splitting and intersubband spin-orbit coupling effect in AlGaN/GaN quantum wells. Acta Physica Sinica, 2012, 61(2): 027103.doi:10.7498/aps.61.027103
[9]	Zheng Yu-Jun, Xu Xian-Gang, Ji Zi-Wu.Optical properties of exciton and charged exciton in undoped ZnSe/BeTe type-Ⅱ quantum wells under high magnetic fields. Acta Physica Sinica, 2011, 60(4): 047805.doi:10.7498/aps.60.047805
[10]	Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue.High electron mobility lattice-matched InAlN/GaN materials. Acta Physica Sinica, 2011, 60(11): 117305.doi:10.7498/aps.60.117305
[11]	Zhou Zhong-Tang, Guo Li-Wei, Xing Zhi-Gang, Ding Guo-Jian, Tan Chang-Lin, Lü Li, Liu Jian, Liu Xin-Yu, Jia Hai-Qiang, Chen Hong, Zhou Jun-Ming.The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure. Acta Physica Sinica, 2007, 56(10): 6013-6018.doi:10.7498/aps.56.6013
[12]	Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Zhu Bo, Cui Li-Jie, Gao Hong-Ling, Li Dong-Lin, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao.Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers. Acta Physica Sinica, 2007, 56(7): 4143-4147.doi:10.7498/aps.56.4143
[13]	Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping.Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness. Acta Physica Sinica, 2007, 56(8): 4955-4959.doi:10.7498/aps.56.4955
[14]	Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Cui Li-Jie, Li Dong-Lin, Gao Hong-Ling, Zeng Yi-Ping, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao.Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems. Acta Physica Sinica, 2007, 56(7): 4099-4104.doi:10.7498/aps.56.4099
[15]	Zhou Wen-Zheng, Yao Wei, Zhu Bo, Qiu Zhi-Jun, Guo Shao-Ling, Lin Tie, Cui Li-Jie, Gui Yong-Sheng, Chu Jun-Hao.Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAlAs/InGaAs single quantum well. Acta Physica Sinica, 2006, 55(4): 2044-2048.doi:10.7498/aps.55.2044
[16]	Shu Qiang, Shu Yong-Chun, Zhang Guan-Jie, Liu Ru-Bin, Yao Jiang-Hong, Pi Biao, Xing Xiao-Dong, Lin Yao-Wang, Xu Jing-Jun, Wang Zhan-Guo.Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure. Acta Physica Sinica, 2006, 55(3): 1379-1383.doi:10.7498/aps.55.1379
[17]	Zheng Ze-Wei, Shen Bo, Gui Yong-Sheng, Qiu Zhi-Jun, Tang Ning, Jiang Chun-Ping, Zhang Rong, Shi Yi, Zheng You-Dou, Guo Shao-Lin, Chu Jun-Hao.Study on the subband properties of AlxGa1-x N/GaN modulation-doped heterostructures. Acta Physica Sinica, 2004, 53(2): 596-600.doi:10.7498/aps.53.596
[18]	Kong Yue-Chan, Zheng You-Dou, Zhou Chun-Hong, Deng Yong-Zhen, Gu Shu-Lin, Shen Bo, Zhang Rong, Han Ping, Jiang Ruo-Lian, Shi Yi.Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AlGaN/GaN heterostruture. Acta Physica Sinica, 2004, 53(7): 2320-2324.doi:10.7498/aps.53.2320
[19]	Liu Hong-Xia, Hao Yue, Zhang Tao, Zheng Xue-Feng, Ma Xiao-Hua.Study on the kink effect in AlGaAs/InGaAs/GaAs PHEMTs. Acta Physica Sinica, 2003, 52(4): 984-988.doi:10.7498/aps.52.984
[20]	Lv YONG-LIANG, ZHOU SHI-PING, XU DE-MING.ANALYSIS OF PROPERTIES OF HIGH-ELECTRON-MOBILITY-TRANSISTOR UNDER OPTICAL ILLUMI NATION. Acta Physica Sinica, 2000, 49(7): 1394-1399.doi:10.7498/aps.49.1394

Catalog

Vol. 69, Issue 15 - 2020-08-05

Metrics

Abstract views:9007
PDF Downloads:171
Cited By:0

Search

Article