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Abstract

Formamidinium lead bromide (FAPbBr ₃) perovskite nanocrystals (NCs) have attracted great attention due to their remarkable performances of low cost, high color purity and tunable band gap. However, in a typical FAPbBr ₃perovskite light-emitting diode(LED), PEDOT:PSS, with hygroscopic and acidic nature, serves as a hole injection layer (HIL), thus leading to the device stability to decrease seriously. Device stability is one critical issue that needs improving for future applications. Here in this study, the nickel oxide (NiO) film prepared by the solution method is adopted as the HIL of the FAPbBr ₃perovskite LED to substitute detrimental PEDOT:PSS. Compared with the control device with PEDOT:PSS HIL, the resulting LED based on NiO film has the operating lifetime twice as great as that based on the PEDOT:PSS film. For further enhancing the performance of FAPbBr ₃LED, two metal dopants (Cs and Li) are introduced to improve the hole injection capability of NiO film and the charge carriers’ balance of device. With Hall measurements, both NiO and Cs/Li-doped NiO demonstrate a full p-type semiconductor characteristic. Increasing the doping concentration in the film can increase the carrier concentration and reduce the carrier mobility. This decreased carrier mobility results from the increased scattering due to grain boundaries and impurity phases, seriously at high Cs/Li concentration. As a result, the device, based on the NiO film (doping 2 mol% Cs) shows the best performance with a maximum brightness value of 2970 cd/m ², current efficiency of 43 cd/A and external quantum efficiency (EQE) of 11.0%, thus its efficiency is increased nearly by twice compared with that of the PEDOT:PSS-based device. The results pave the way for making highly efficient and stability perovskite LEDs based on FAPbBr ₃NCs.

Keywords:

formamidinium lead bromide perovskite nanocrystals/
nickel oxide/
metal dopants/
light emitting diodes

Authors and contacts

Corresponding author:Yang Xu-Yong,yangxy@shu.edu.cn

Funds:Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0401702), the National Natural Science Foundation of China (Grant Nos. 51675322, 61605109, 61735004), the Shanghai Rising-Star Program, China (Grant No. 17QA1401600), and the Program for Professors of Special Appointment (Eastern Scholar) of the Higher Education Institutions of Shanghai, China.

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金属掺杂浓度	V_on/V^a	L_max/ cd·m^–2^b	CE/ cd·A^–1^c	EQE/%^d
2 mol% Cs	3	2970	43.0	11.0
4 mol% Cs	3	2610	27.8	7.1
6 mol% Cs	3	2090	8.7	2.2
2 mol% Li	3	2500	32.3	8.3
4 mol% Li	3	3490	41.8	10.7
6 mol% Li	3	2950	16.0	4.1
^a开启电压, 亮度为1 cd·m^–2时的电压;^b最高的亮度;^c最高的电流效率;^d最高的外量子效率.

DownLoad: CSV

金属掺杂浓度	ρ/Ω·cm^a	μ/cm²·V^–1·s^–1^b	p/cm^–3^c
0	2.6 × 10^–1	1.7	2.1 × 10¹⁸
2 mol% Cs	1.8 × 10^–1	1.5	5.3 × 10¹⁸
4 mol% Cs	1.7 × 10^–1	0.5	6.0 × 10¹⁸
6 mol% Cs	1.4 × 10^–1	0.2	7.4 × 10¹⁸
2 mol% Li	2.2 × 10^–1	1.3	4.6 × 10¹⁸
4 mol% Li	1.8 × 10^–1	1.1	5.7 × 10¹⁸
6 mol% Li	1.5 × 10^–1	0.3	6.9 × 10¹⁸
^a电阻率;^b迁移率;^c载流子浓度(空穴).

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Vol. 69, Issue 1 - 2020-01-05

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