[1] |
He Huan, Bai Yu-Rong, Tian Shang, Liu Fang, Zang Hang, Liu Wen-Bo, Li Pei, He Chao-Hui.Simulation of displacement damage induced by protons incident on AlxGa1–xN materials. Acta Physica Sinica, 2024, 73(5): 052402.doi:10.7498/aps.73.20231671 |
[2] |
Liu Ye, Guo Hong-Xia, Ju An-An, Zhang Feng-Qi, Pan Xiao-Yu, Zhang Hong, Gu Zhao-Qiao, Liu Yi-Tian, Feng Ya-Hui.Data inversion and erroneous annealing of floating gate cell under proton radiation. Acta Physica Sinica, 2022, 71(11): 118501.doi:10.7498/aps.71.20212405 |
[3] |
.Mechanisms of Alpha Particle Induced Soft Errors in Nanoscale Static Random Access Memories. Acta Physica Sinica, 2020, (): 006100.doi:10.7498/aps.69.20191796 |
[4] |
Zhang Zhan-Gang, Ye Bing, Ji Qing-Gang, Guo Jin-Long, Xi Kai, Lei Zhi-Feng, Huang Yun, Peng Chao, He Yu-Juan, Liu Jie, Du Guang-Hua.Mechanisms of alpha particle induced soft errors in nanoscale static random access memories. Acta Physica Sinica, 2020, 69(13): 136103.doi:10.7498/aps.69.20201796 |
[5] |
Wang Xun, Zhang Feng-Qi, Chen Wei, Guo Xiao-Qiang, Ding Li-Li, Luo Yin-Hong.Experimental study on neutron single event effects of commercial SRAMs based on CSNS. Acta Physica Sinica, 2020, 69(16): 162901.doi:10.7498/aps.69.20200265 |
[6] |
Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei.Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices. Acta Physica Sinica, 2020, 69(5): 056101.doi:10.7498/aps.69.20191209 |
[7] |
Zhu Bing-Hui, Yang Ai-Xiang, Niu Shu-Tong, Chen Xi-Meng, Zhou Wang Shao, Jian-Xiong.Simulation analyses of 100-keV as well as low and high energy protons through insulating nanocapillary. Acta Physica Sinica, 2018, 67(1): 013401.doi:10.7498/aps.67.20171701 |
[8] |
Zhang Zhan-Gang, Lei Zhi-Feng, Yue Long, Liu Yuan, He Yu-Juan, Peng Chao, Shi Qian, Huang Yun, En Yun-Fei.Single event upset characteristics and physical mechanism for nanometric SOI SRAM induced by space energetic ions. Acta Physica Sinica, 2017, 66(24): 246102.doi:10.7498/aps.66.246102 |
[9] |
Luo Yin-Hong, Guo Xiao-Qiang, Chen Wei, Guo Gang, Fan Hui.Energy and angular dependence of single event upsets in ESA SEU Monitor. Acta Physica Sinica, 2016, 65(20): 206103.doi:10.7498/aps.65.206103 |
[10] |
Luo Yin-Hong, Zhang Feng-Qi, Wang Yan-Ping, Wang Yuan-Ming, Guo Xiao-Qiang, Guo Hong-Xia.Single event upsets sensitivity of low energy proton in nanometer static random access memory. Acta Physica Sinica, 2016, 65(6): 068501.doi:10.7498/aps.65.068501 |
[11] |
Zhao Wen, Guo Xiao-Qiang, Chen Wei, Qiu Meng-Tong, Luo Yin-Hong, Wang Zhong-Ming, Guo Hong-Xia.Effects of nuclear reactions between protons and metal interconnect overlayers on single event effects of micro/nano scaled static random access memory. Acta Physica Sinica, 2015, 64(17): 178501.doi:10.7498/aps.64.178501 |
[12] |
Luo Yin-Hong, Zhang Feng-Qi, Guo Hong-Xia, Guo Xiao-Qiang, Zhao Wen, Ding Li-Li, Wang Yuan-Ming.Angular dependence of proton single event multiple-cell upsets in nanometer SRAM. Acta Physica Sinica, 2015, 64(21): 216103.doi:10.7498/aps.64.216103 |
[13] |
Zhu Jin-Hui, Wei Yuan, Xie Hong-Gang, Niu Sheng-Li, Huang Liu-Xing.Numerical investigation of non-ionizing energy loss of proton at an energy range of 300 eV to 1 GeV in silicon. Acta Physica Sinica, 2014, 63(6): 066102.doi:10.7498/aps.63.066102 |
[14] |
Wang Xiao-Han, Guo Hong-Xia, Lei Zhi-Feng, Guo Gang, Zhang Ke-Ying, Gao Li-Juan, Zhang Zhan-Gang.Calculation of single event upset based on Monte Carlo and device simulations. Acta Physica Sinica, 2014, 63(19): 196102.doi:10.7498/aps.63.196102 |
[15] |
Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui.Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica, 2013, 62(11): 117103.doi:10.7498/aps.62.117103 |
[16] |
Ding Li-Li, Guo Hong-Xia, Chen Wei, Yan Yi-Hua, Xiao Yao, Fan Ru-Yu.Simulation study of the influence of ionizing irradiation on the single event upset vulnerability of static random access memory. Acta Physica Sinica, 2013, 62(18): 188502.doi:10.7498/aps.62.188502 |
[17] |
Wang Zu-Jun, Tang Ben-Qi, Xiao Zhi-Gang, Liu Min-Bo, Huang Shao-Yan, Zhang Yong.Experimental analysis of charge transfer efficiency degradation of charge coupled devices induced by proton irradiation. Acta Physica Sinica, 2010, 59(6): 4136-4142.doi:10.7498/aps.59.4136 |
[18] |
Zhang Ke-Ying, Guo Hong-Xia, Luo Yin-Hong, He Bao-Ping, Yao Zhi-Bin, Zhang Feng-Qi, Wang Yuan-Ming.Three-dimensional numerial simulation of single event upset effects in static random access memory. Acta Physica Sinica, 2009, 58(12): 8651-8656.doi:10.7498/aps.58.8651 |
[19] |
He Bao-Ping, Chen Wei, Wang Gui-Zhen.A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protons. Acta Physica Sinica, 2006, 55(7): 3546-3551.doi:10.7498/aps.55.3546 |
[20] |
Zhang Qing-Xiang, Hou Ming-Dong, Liu Jie, Wang Zhi-Guang, Jin Yun-Fan, Zhu Zhi-Yong, Sun You-Mei.The dependence of single event upset cross-section on incident angle. Acta Physica Sinica, 2004, 53(2): 566-570.doi:10.7498/aps.53.566 |