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Abstract

Topological state is a rapidly emerging branch of condensed matter physics in recent years, among which two-dimensional topological insulators (2D TIs) have attracted wide attentions due to their great potential in basic research and applications. The 2D TI has insulating bulk state and conductive edge state. Its edge state is protected by time inversion symmetry and will not be backscattered by weak disordered impurities on the boundaries, thus forming a dissipationless edge conductive channel. Compared with 3D TIs, the edge state of 2D TIs can only propagate in two directions, meaning stronger anti-interference with robustness, thus is of great significance for the development of advanced integrated circuits with low energy consumption. Among many experimental methods for studying two-dimensional materials, scanning tunneling microscopy is a surface-sensitive tool with high atomic and energy resolution to locally detect the electronic structure of the material surface. By detecting the edge state of 2D materials in real space, it is particularly suitable for characterizing their topological properties. This paper traces the research progress of 2D TIs, and illustrates their spectroscopic evidences to resolve the nontrivial properties of the one-dimensional edge states. Combined with theoretical calculations, the topological edge states are verified to reside within the bulk energy gap, as well as being localized in the vicinity of step boundaries with a specific spatial distribution in real space. Finally, we discuss the tunability and manipulations of 2D topological materials through structural and external fields, which show promising prospects for applications in future spintronics and energy-saving devices.

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Authors and contacts

Corresponding author:Zhang Wen-Hao,wenhaozhang@hust.edu.cn; Fu Ying-Shuang,yfu@hust.edu.cn

Funds:Project supported by the National Key Research and Development Plan of China (Grant Nos. 2017YFA0403501, 2018YFA0307000, 2016YFA0401003) and the National Natural Science Foundation of China (Grant Nos. 11874161, 11774105).

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References

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Cited By

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研究体系	代表性材料	拓扑能隙	实验进展
石墨烯及相关异质结构	Graphene	~μeV
	Graphene/BiTeX	70—80 meV
	5d吸附原子/Graphene	0.2 eV
	Graphene/Re/SiC(0001)	0.1 eV
	Ru/Graphene	10 meV
	In(Tl)/Graphene	~7(20) meV
	Bi₂Se₃/Graphene/Bi₂Se₃	30—40 meV
	Sb₂Te₃/Graphene/Sb₂Te₃	1.5 meV
	MoTe₂/ Graphene/MoTe₂	3.5 meV
量子阱	HgTe/CdTe	~meV	支持^[7]
	InAs/GaSb/AlSb	~meV	支持^[9]
	GaN/InN/GaN	~10 meV
	GaAs/Ge/GaAs	~15 meV
二维层状单质或化物	单层Bi(111)	0.2—0.6 eV	支持^[11]
	多层Bi(111)/Si(111)	0.8 eV	支持^[14]
	Bi单晶	—	支持^[13]
	Bi(110)	~0.1 eV	支持^[52]
	4层黑磷	~5 meV
	应力或电场下Sb(111)	—
	单层GaAs, BBi, AlBi
三维弱拓扑结缘体	ZrTe₅/HfTe₅	~0.1 eV	支持^[22-24]
	Bi₄I₄	—	支持^[27]
	Bi₄Br₄	~0.18 eV
	Bi₁₄Rh₃I₉	~0.2 eV	支持^[26]
类石墨烯六角蜂窝晶格	Silene(硅烯)	2 meV
	Germanene(锗烯)	23.9 meV
	Stanene(锡烯)	~0.1 eV	支持^{[35], [37]}
	Bismuthene(铋烯)	0.67 eV	支持^[38]
1 T’相过渡金属硫族化合物	1 T’-WTe₂	~0.1 eV	支持^[40-42]
1 T’相过渡金属硫族化合物	1 T’-WSe₂	~0.1 eV	支持^[47-48]
有机材料	Ni₃(C₁₈H₁₂N₆)₂	16—23 meV
	Ni₃C₁₂S₁₂	22.7和9.5 meV
	Pb(C₆H₅)₃/Bi(C₆H₅)₃	43和8.6 meV
	δ-石墨炔	0.59 meV
	石墨化-C₆N₆	5.50和8.27 meV
官能团修饰材料	–F, –Cl, –Br, –I, –OH修饰的锡烯/锗烯	~0.3 eV
	–H, –F, –Cl, –Br, –I, –CH₃修饰的单层Bi(111)/Sb(111)/双层Pb	~0.3—1 eV
	-Cl修饰的GaBi	0.65 eV
狄拉克半金属薄膜	Na₃Bi	层厚依赖~0.3 eV	支持^[57]
狄拉克半金属薄膜	Cd₃As₂	层厚依赖~0.11 eV	支持^[55]
过渡金属氧化物	双层LaAuO₃	0.15 eV
重金属元素化合物	TlBi	56 meV
	TlAs	0.131 eV
	TlSb	0.268 eV

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Vol. 68, Issue 22 - 2019-11-20

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