[1] |
Jiang Long-Xing, Li Qing-Chao, Zhang Xu, Li Jing-Feng, Zhang Jing, Chen Zu-Xin, Zeng Min, Wu Hao.Spintronic devices based on topological and two-dimensional materials. Acta Physica Sinica, 2024, 73(1): 017505.doi:10.7498/aps.73.20231166 |
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Bao Chang-Hua, Fan Ben-Shu, Tang Pei-Zhe, Duan Wen-Hui, Zhou Shu-Yun.Floquet engineering in quantum materials. Acta Physica Sinica, 2023, 72(23): 234202.doi:10.7498/aps.72.20231423 |
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Ba Jia-Yan, Chen Fu-Yang, Duan Hou-Jian, Deng Ming-Xun, Wang Rui-Qiang.Planar Hall effect in topological materials. Acta Physica Sinica, 2023, 72(20): 207201.doi:10.7498/aps.72.20230905 |
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Wang Huan, He Chun-Juan, Xu Sheng, Wang Yi-Yan, Zeng Xiang-Yu, Lin Jun-Fa, Wang Xiao-Yan, Gong Jing, Ma Xiao-Ping, Han Kun, Wang Yi-Ting, Xia Tian-Long.Single crystal growth of topological semimetals and magnetic topological materials. Acta Physica Sinica, 2023, 72(3): 038103.doi:10.7498/aps.72.20221574 |
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Qiu Zi-Yang, Chen Yan, Qiu Xiang-Gang.Infrared spectroscopic study of topological material BaMnSb2. Acta Physica Sinica, 2022, 71(10): 107201.doi:10.7498/aps.71.20220011 |
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Xu Jia-Ling, Jia Li-Yun, Liu Chao, Wu Quan, Zhao Ling-Jun, Ma Li, Hou Deng-Lu.Band structure of topological insulator Li(Na)AuS. Acta Physica Sinica, 2021, 70(2): 027101.doi:10.7498/aps.70.20200885 |
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Jiang Tian-Shu, Xiao Meng, Zhang Zhao-Qing, Chan Che-Ting.Physics and topological properties of periodic and aperiodic transmission line networks. Acta Physica Sinica, 2020, 69(15): 150301.doi:10.7498/aps.69.20200258 |
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Gu Kai-Yuan, Luo Tian-Chuang, Ge Jun, Wang Jian.Superconductivity in topological materials. Acta Physica Sinica, 2020, 69(2): 020301.doi:10.7498/aps.69.20191627 |
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Yang Wen, Song Jian-Jun, Ren Yuan, Zhang He-Ming.Band structure model of modified Ge for optical device application. Acta Physica Sinica, 2018, 67(19): 198502.doi:10.7498/aps.67.20181155 |
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Lu Yao, Wang Pei-Ji, Zhang Chang-Wen, Feng Xian-Yang, Jiang Lei, Zhang Guo-Lian.Study of material properties of Fe, S Co-doped SnO2 by first principles. Acta Physica Sinica, 2012, 61(2): 023101.doi:10.7498/aps.61.023101 |
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Gong Li, Feng Xiang-Yang, Lu Yao, Zhang Chang-Wen, Wang Pei-Ji.The investigation on effect of property of ZnO photoelectric material by Ta-doping. Acta Physica Sinica, 2012, 61(9): 097101.doi:10.7498/aps.61.097101 |
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Chen Dong, Xiao He-Yang, Jia Wei, Chen Hong, Zhou He-Gen, Li Yi, Ding Kai-Ning, Zhang Yong-Fan.Electronic structures and optical properties of AAl2C4 (A=Zn, Cd, Hg; C=S, Se) semiconductors. Acta Physica Sinica, 2012, 61(12): 127103.doi:10.7498/aps.61.127103 |
[13] |
Lu Yao, Wang Pei-Ji, Zhang Chang-Wen, Jiang Lei, Zhang Guo-Lian, Song Peng.Material opto-electronic properties of In, N co-doped SnO2 studied by first principles. Acta Physica Sinica, 2011, 60(6): 063103.doi:10.7498/aps.60.063103 |
[14] |
Lu Yao, Wang Pei-Ji, Zhang Chang-Wen, Feng Xian-Yang, Jiang Lei, Zhang Guo-Lian.First-principles calculation on electronic structure and optical properties of iron-doped SnO2. Acta Physica Sinica, 2011, 60(11): 113101.doi:10.7498/aps.60.113101 |
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Ma Xiao-Feng, Wang Yi-Zhe, Zhou Cheng-Yue.Structural and optical properties of a-Si ∶H/SiO2 multiple quantum wells. Acta Physica Sinica, 2011, 60(6): 068102.doi:10.7498/aps.60.068102 |
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Yu Feng, Wang Pei-Ji, Zhang Chang-Wen.Electronic structure and optical properties of Al-doped SnO2. Acta Physica Sinica, 2011, 60(2): 023101.doi:10.7498/aps.60.023101 |
[17] |
Ma Jian-Li, Zhang He-Ming, Song Jian-Jun, Wang Guan-Yu, Wang Xiao-Yan.Energy band structure of uniaxial-strained silicon material on the (001) surface arbitrary orientation. Acta Physica Sinica, 2011, 60(2): 027101.doi:10.7498/aps.60.027101 |
[18] |
Wu Yun-Wen, Hai Wen-Hua, Cai Li-Hua.Energy band structure of two ions in a one-dimensional Paul trap. Acta Physica Sinica, 2006, 55(2): 583-589.doi:10.7498/aps.55.583 |
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Chen De-Yan, Lü Tie-Yu, Huang Mei-Chun.GW quasiparticle band structure of BaSe. Acta Physica Sinica, 2006, 55(7): 3597-3600.doi:10.7498/aps.55.3597 |
[20] |
Guo Zeng-Bao.. Acta Physica Sinica, 2002, 51(10): 2344-2348.doi:10.7498/aps.51.2344 |