- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

Memristors are considered to be the potential candidate for simulating synapses due to their high density, low power consumption and continuously adjustable resistance. Metal oxide is an ideal choice for fabricating memristive devices with high performance due to its advantages of oxygen migration, easy adjustment of components and compatibility with traditional CMOS. In this review paper, the memristive behaviors and operation mechanism of oxide-based memristors including digital-type memristors and analog-type memristors are first introduced. We mainly summarize the cognitive functions simulated by analog-type memristive synapse, including nonlinear-transmission characteristic, synaptic plasticity, learning experience, and non-associative/associative learning. Then, the potential applications of memristive synapse in pattern recognition, sound localization, logic operation, flexibility/transferability and optoelectronic memristive synapse are introduced. Finally, we provide an outlook of the future possible studies of oxide-based memristive synapse in the relevant fields.

Keywords:

Authors and contacts

Corresponding author:Liu Yi-Chun,ycliu@nenu.edu.cn

FullText HTML: translate this paragraph

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
[44]
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
[56]
[57]
[58]
[59]
[60]
[61]
[62]
[63]
[64]
[65]
[66]
[67]
[68]
[69]
[70]
[71]
[72]
[73]
[74]
[75]
[76]
[77]
[78]
[79]
[80]
[81]

Cited By

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

DownLoad: Full-Size Img PowerPoint

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
[44]
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
[56]
[57]
[58]
[59]
[60]
[61]
[62]
[63]
[64]
[65]
[66]
[67]
[68]
[69]
[70]
[71]
[72]
[73]
[74]
[75]
[76]
[77]
[78]
[79]
[80]
[81]

[1]	Wang Xuan, Du Jian-Rong, Li Zhi-Jun, Ma Ming-Lin, Li Chun-Lai.Coexisting discharge and synchronization of heterogeneous discrete neural network with crosstalk memristor synapses. Acta Physica Sinica, 2024, 73(11): 110503.doi:10.7498/aps.73.20231972
[2]	Guo Hui-Meng, Liang Yan, Dong Yu-Jiao, Wang Guang-Yi.Simplification of Chua corsage memristor and hardware implementation of its neuron circuit. Acta Physica Sinica, 2023, 72(7): 070501.doi:10.7498/aps.72.20222013
[3]	Wen Xin-Yu, Wang Ya-Sai, He Yu-Hui, Miao Xiang-Shui.Memristive brain-like computing. Acta Physica Sinica, 2022, 71(14): 140501.doi:10.7498/aps.71.20220666
[4]	Hu Wei, Liao Jian-Bin, Du Yong-Qian.An analytic modeling strategy for memristor cell applicable to large-scale memristive networks. Acta Physica Sinica, 2021, 70(17): 178505.doi:10.7498/aps.70.20210116
[5]	Shi Chen-Yang, Min Guang-Zong, Liu Xiang-Yang.Research progress of protein-based memristor. Acta Physica Sinica, 2020, 69(17): 178702.doi:10.7498/aps.69.20200617
[6]	Xu Wei, Wang Yu-Qi, Li Yue-Feng, Gao Fei, Zhang Miao-Cheng, Lian Xiao-Juan, Wan Xiang, Xiao Jian, Tong Yi.Design of novel memristor-based neuromorphic circuit and its application in classical conditioning. Acta Physica Sinica, 2019, 68(23): 238501.doi:10.7498/aps.68.20191023
[7]	Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan.Mathematical model of memristor with sensory memory. Acta Physica Sinica, 2019, 68(1): 018501.doi:10.7498/aps.68.20181577
[8]	Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan.Analysis of memristor model with learning-experience behavior. Acta Physica Sinica, 2019, 68(19): 198502.doi:10.7498/aps.68.20190808
[9]	Chen Yi-Hao, Xu Wei, Wang Yu-Qi, Wan Xiang, Li Yue-Feng, Liang Ding-Kang, Lu Li-Qun, Liu Xin-Wei, Lian Xiao-Juan, Hu Er-Tao, Guo Yu-Feng, Xu Jian-Guang, Tong Yi, Xiao Jian.Fabrication of synaptic memristor based on two-dimensional material MXene and realization of both long-term and short-term plasticity. Acta Physica Sinica, 2019, 68(9): 098501.doi:10.7498/aps.68.20182306
[10]	Yu Zhi-Qiang, Liu Min-Li, Lang Jian-Xun, Qian Kai, Zhang Chang-Hua.Resistive switching characteristics and resistive switching mechanism of Au/TiO2/FTO memristor. Acta Physica Sinica, 2018, 67(15): 157302.doi:10.7498/aps.67.20180425
[11]	Wu Jie-Ning, Wang Li-Dan, Duan Shu-Kai.A memristor-based time-delay chaotic systems and pseudo-random sequence generator. Acta Physica Sinica, 2017, 66(3): 030502.doi:10.7498/aps.66.030502
[12]	Xu Ya-Ming, Wang Li-Dan, Duan Shu-Kai.A memristor-based chaotic system and its field programmable gate array implementation. Acta Physica Sinica, 2016, 65(12): 120503.doi:10.7498/aps.65.120503
[13]	Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan.Modification of memristor model with synaptic characteristics and mechanism analysis of the model's learning-experience behavior. Acta Physica Sinica, 2016, 65(12): 128503.doi:10.7498/aps.65.128503
[14]	Yuan Ze-Shi, Li Hong-Tao, Zhu Xiao-Hua.A digital-analog hybrid random number generator based on memristor. Acta Physica Sinica, 2015, 64(24): 240503.doi:10.7498/aps.64.240503
[15]	Meng Fan-Yi, Duan Shu-Kai, Wang Li-Dan, Hu Xiao-Fang, Dong Zhe-Kang.An improved WOx memristor model with synapse characteristic analysis. Acta Physica Sinica, 2015, 64(14): 148501.doi:10.7498/aps.64.148501
[16]	Guo Yu-Quan, Duan Shu-Kai, Wang Li-Dan.Influence of length parameter on the characteristics of nanoscale titanium oxide memristor. Acta Physica Sinica, 2015, 64(10): 108502.doi:10.7498/aps.64.108502
[17]	Liu Dong-Qing, Cheng Hai-Feng, Zhu Xuan, Wang Nan-Nan, Zhang Chao-Yang.Research progress of memristors and memristive mechanism. Acta Physica Sinica, 2014, 63(18): 187301.doi:10.7498/aps.63.187301
[18]	Xu Hui, Tian Xiao-Bo, Bu kai, Li Qing-Jiang.Influence of temperature change on conductive characteristics of titanium oxide memristor. Acta Physica Sinica, 2014, 63(9): 098402.doi:10.7498/aps.63.098402
[19]	Tian Xiao-Bo, Xu Hui, Li Qing-Jiang.Influence of the cross section area on the conductive characteristics of titanium oxide memristor. Acta Physica Sinica, 2014, 63(4): 048401.doi:10.7498/aps.63.048401
[20]	Jia Lin-Nan, Huang An-Ping, Zheng Xiao-Hu, Xiao Zhi-Song, Wang Mei.Progress of memristor modulated by interfacial effect. Acta Physica Sinica, 2012, 61(21): 217306.doi:10.7498/aps.61.217306

Catalog

Vol. 68, Issue 16 - 2019-08-20

Metrics

Abstract views:16681
PDF Downloads:533
Cited By:0

Search

Article