- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

Magnetic refrigeration is a kind of energy-saving, environment-friendly and intrinsically-high-efficient refrigeration technology, which has a wide application prospect. At present, the magnetic refrigeration systems based on active magnetic regenerator cycle have been widely studied and many prototypes of refrigerators have been developed. However, fluids and gases are mainly applied to heat exchange in these systems, which brings some problems such as low operating frequency, large regenerative loss, and complicated sub-component design. These problems increase the cost and reduce the efficiency of magnetic refrigerators. In view of the above problems and challenges, researchers try to introduce the solid-state heat transfer enhancement mechanism, and to design and optimize the full-solid-state magnetic refrigeration system model. In this paper, the development process of magnetic refrigeration technology at room temperature is briefly introduced at first. And the reasons for the low operating frequency and efficiency of the magnetic refrigerator, caused by using fluids for heat exchange, are analyzed. Then, two types of solid-state heat exchange media are briefly described, which are thermal diodes (i.e., electric-field-controlled thermal diode and magnetic-field-controlled thermal diode) and high thermal-conductivity material elements. In this paper we review the research progress of the full-solid-state magnetic refrigeration model based on thermal diodes and high thermal-conductivity material elements. Some key items for these models are described in detail, such as the architectural design concept, physical mechanism and working principle, the main performance simulation results of these systems and their physical change rules. Then, the main performances (i.e. operating frequency, specific cooling power, temperature span, and coefficient of performance) of the full-solid-state magnetic refrigeration model and the AMR model are summarized and comparatively analyzed. It shows that the full-solid-state magnetic refrigeration system can work at high frequency and has greater specific-cooling-power. Meanwhile the design of full-solid-state magnetic refrigeration system is more compact and simpler. The characteristics and problems of the two types of solid heat exchange media are also analyzed. Due to the strong thermal transport capability, easy access and integration of thermoelectric elements, the full-solid-state magnetic refrigeration technology based on thermoelectric thermal diodes has greater application potential. Finally, the main research directions and key scientific problems for further studying the full-solid-state magnetic refrigeration field are discussed and analyzed.

Keywords:

Authors and contacts

Corresponding author:Sun Zhi-Gang,sun_zg@whut.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 11834012, 11574243, 11174231)

FullText HTML: translate this paragraph

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
[44]
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
[56]
[57]
[58]
[59]
[60]
[61]
[62]
[63]
[64]

Cited By

DownLoad: Full-Size Img PowerPoint

配置	温跨/K	最大SCP/W·kg^–1		增加百分比/%
配置	温跨/K	铜块	Peltier元件	增加百分比/%
平行板	5	67.6	133.8	98
平行板	10	26.1	64.9	149
拓扑优化结构	5	88.5	160.9	82
拓扑优化结构	10	35.7	79.8	124

DownLoad: CSV

	类型	磁工质	传热介质	工作频率/Hz	温跨/K	SCP/W·kg^–1	COP	参考文献
全固态MR	准2D全固态MR	Gd	Peltier元件	0—225	5—15	1 × 10⁴	—	[21]
	全固态MR	Gd	Peltier元件	10	50	1.5 × 10⁴	2.8	[27]
	2D全固态MR	Gd	Peltier元件	20	—	—	5.3—6.5	[28]
	全固态MR	Gd	Peltier元件	20—200	60	—	4.0	[30]
	1D全固态MR	Gd	Peltier元件	—	5	—	0.96—9.21	[23]
	准2D全固态MR	Gd	Peltier元件	—	10	79.8	—	[31]
	1D全固态MR	Gd	k_H元件	0—500	2.5	—	1.5	[32]
	1D全固态MR	Gd	k_H元件	—	11.5	—	4.0	[33]
	准2D全固态MR	Gd	Cu块	—	5—50.9	2.6—105.8	1.5—4.2	[24]
传统AMR	1D AMR	Gd	水	—	15	—	1.49—5.27	[42]
	2D AMR	Gd	水	—	3	—	5.4	[43]
	1D AMR	Gd	水	0.125	6	—	12.16	[44]
	AMR/旋转床	Gd	水+乙二醇	0~10	< 18.9	—	—	[45]
	2D AMR	Gd	水+乙二醇	0.75	10.2	60.59	3.1	[46]
	2D AMR	Gd	水	1.5	14.5	—	~2	[47]
	AMR/旋转床	Gd	水+乙二醇	0.8	7.1	—	0.54	[48]
	1D AMR	Gd	水+乙二醇	0.3—10	20	100	7.6—11.2	[49]
	2D AMR	${\rm Gd_5(Si}_x{\rm Ge}_{1-x})_4 $	水	1.25	~10—16	—	~5	[50]
	AMR/平行板床	${\rm MnFeP}_{1-x}{\rm As}_x $	水+乙二醇	0.8	32	—	—	[51]
	1D AMR	LaFeSiMnHy	水+乙二醇	0.15	19.8	12.4	—	[52]

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]
[30]
[31]
[32]
[33]
[34]
[35]
[36]
[37]
[38]
[39]
[40]
[41]
[42]
[43]
[44]
[45]
[46]
[47]
[48]
[49]
[50]
[51]
[52]
[53]
[54]
[55]
[56]
[57]
[58]
[59]
[60]
[61]
[62]
[63]
[64]

[1]	Yang Xu, Li Jing, Mao Yu, Tao Ke-Ai, Sun Kuan, Chen Shan-Shan, Zhou Yong-Li, Zheng Yu-Jie.Experimental study of single-phase change material thermal diode based on calcium chloride hexahydrate. Acta Physica Sinica, 2024, 73(5): 058301.doi:10.7498/aps.73.20231686
[2]	Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang.Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica, 2023, 72(4): 048503.doi:10.7498/aps.72.20221831
[3]	Liu Cheng, Li Ming, Wen Zhang, Gu Zhao-Yuan, Yang Ming-Chao, Liu Wei-Hua, Han Chuan-Yu, Zhang Yong, Geng Li, Hao Yue.Establishment of composite leakage model and design of GaN Schottky barrier diode with stepped field plate. Acta Physica Sinica, 2022, 71(5): 057301.doi:10.7498/aps.71.20211917
[4]	Qu Jun-Fu, Feng Yuan-Wei, Geng Li-Dong, Li Hong-Tao.Study on particle generation model of anode in rod-pinch diode. Acta Physica Sinica, 2022, 71(22): 225203.doi:10.7498/aps.71.20221136
[5]	Jiang Feng-Yi, Liu Jun-Lin, Zhang Jian-Li, Xu Long-Quan, Ding Jie, Wang Guang-Xu, Quan Zhi-Jue, Wu Xiao-Ming, Zhao Peng, Liu Bi-Yu, Li Dan, Wang Xiao-Lan, Zheng Chang-Da, Pan Shuan, Fang Fang, Mo Chun-Lan.Semiconductor yellow light-emitting diodes. Acta Physica Sinica, 2019, 68(16): 168503.doi:10.7498/aps.68.20191044
[6]	Xiao Wen-Bo, Liu Wei-Qing, Wu Hua-Ming, Zhang Hua-Ming.Review of Parameter extraction methods for single-diode model of solar cell. Acta Physica Sinica, 2018, 67(19): 198801.doi:10.7498/aps.67.20181024
[7]	Kang Hai-Yan, Hu Hui-Yong, Wang Bin, Xuan Rong-Xi, Song Jian-Jun, Zhao Chen-Dong, Xu Xiao-Cang.Analytic models for solid state plasma of Si/Ge/Si heterogeneous and lateral SPiN diode. Acta Physica Sinica, 2015, 64(23): 238501.doi:10.7498/aps.64.238501
[8]	Chen Wei-Chao, Tang Hui-Li, Luo Ping, Ma Wei-Wei, Xu Xiao-Dong, Qian Xiao-Bo, Jiang Da-Peng, Wu Feng, Wang Jing-Ya, Xu Jun.Research progress of substrate materials used for GaN-Based light emitting diodes. Acta Physica Sinica, 2014, 63(6): 068103.doi:10.7498/aps.63.068103
[9]	Wang Tian-Shu, Zhang Rui-De, Guan Zhe, Ba Ke, Zu Yun-Xiao.Properties of memristor in RLC circuit and diode circuit. Acta Physica Sinica, 2014, 63(17): 178101.doi:10.7498/aps.63.178101
[10]	Zhang Ying, Liu Lan-Qin, Wang Wen-Yi, Huang Wan-Qing, Xie Xu-Dong, Zhu Qi-Hua.Physical modeling and caculation method of laser pulse superposition in multi-pass amplification process. Acta Physica Sinica, 2013, 62(6): 064208.doi:10.7498/aps.62.064208
[11]	Mi Guang-Bao, Li Pei-Jie, Huang Xu, Cao Chun-Xiao.Relationship between liquid structure and property IIIresidual bond theoretical model. Acta Physica Sinica, 2012, 61(18): 186106.doi:10.7498/aps.61.186106
[12]	Liu Jing-Wang, Du Zhen-Hui, Li Jin-Yi, Qi Ru-Bin, Xu Ke-Xin.Analytical model for the tuning characteristics of static, dynamic, and transient behaviors in temperature and injection current of DFB laser diodes. Acta Physica Sinica, 2011, 60(7): 074213.doi:10.7498/aps.60.074213
[13]	Du Ming-Xing, Wei Ke-Xin.A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region. Acta Physica Sinica, 2011, 60(10): 108401.doi:10.7498/aps.60.108401
[14]	Zhou Qing, He Xiao-Dong, Hu Yue.A universal cryptosystem based on two simple physical models. Acta Physica Sinica, 2011, 60(9): 094701.doi:10.7498/aps.60.094701
[15]	Zhou Qing, Chen Gang, Hu Yue.A cryptosystem based on simple physical models. Acta Physica Sinica, 2011, 60(4): 044701.doi:10.7498/aps.60.044701
[16]	Zhu Qi, Pan Bai-Liang, Chen Li, Wang Ya-Juan, Zhang Xun-Yi.A kinetic model for optically pumped cesium vapor laser. Acta Physica Sinica, 2010, 59(3): 1797-1801.doi:10.7498/aps.59.1797
[17]	Liu Huan, Gong Ma-Li.Compact laser diode end-pumped Nd:YAG intracavity frequency-tripled quasi-continuous 355 nm laser. Acta Physica Sinica, 2009, 58(10): 7000-7004.doi:10.7498/aps.58.7000
[18]	Zhong Wen-Zhen, He Ke-Jing, Zhou Zhao-Yao, Xia Wei, Li Yuan-Yuan.Physical model and simulation system of powder packing. Acta Physica Sinica, 2009, 58(13): 21-S28.doi:10.7498/aps.58.21
[19]	Liu Lan-Qin, Su Jing-Qin, Luo Bin, Wang Wen-Yi, Jing Feng, Wei Xiao-Feng.Physical modeling of broadband pulsed laser amplification process based on hybrid-widened linewidth. Acta Physica Sinica, 2007, 56(11): 6749-6753.doi:10.7498/aps.56.6749
[20]	Li Xiao, Liu Liang, Zhang Hai-Ying, Yin Jun-Jian, Li Hai-Ou, Ye Tian-Chun, Gong Min.A new small signal physical model of InP-based composite channel high electron mobility transistor. Acta Physica Sinica, 2006, 55(7): 3617-3621.doi:10.7498/aps.55.3617

Catalog

Vol. 68, Issue 21 - 2019-11-05

Metrics

Abstract views:10604
PDF Downloads:173
Cited By:0

Search

Article