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Abstract

The development of semiconductor light-emitting diode (LED) in the visible emission range is very unbalance, as the power efficiency of yellow LED is far below other colors. Based on the GaN/Si technology, the authors and his team made a systematic research from the aspect of material growth, chip fabrication, device physics and equipment design, resolved the problems of epi-film cracking, high dislocation density, large strain in quantum well (QW), phase separation in QW, low QW growth temperature, low hole concentration, light absorption by substrate and light blocking by electrode, successfully made a breakthrough in fabricating efficient yellow LED. The yellow LED chip achieves a power efficiency of 26.7% at 20 A/cm ²with 565 nm wavelength and efficacy of 164 lm/W, and the power efficiency goes up to 42.8% at 1 A/cm ²with 577 nm wavelength and efficacy of 248 lm/W. New LED light source with multi-colors and without phosphor was developed based on the efficient yellow LEDs, opened up a new direction of pure LED healthy lighting.

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Authors and contacts

Corresponding author:Jiang Feng-Yi,jiangfengyi@ncu.edu.cn

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样品	电流密度/A·cm^–2	电流/mA	电压/V	主波长/nm	半宽/nm	光功率/mW	外量子效率/%	光功率效率/%	流明效率/lm·W^–1
A	1	10	2.10	571	36.2	10.1	46.3	47.9	283
A	20	200	2.43	560	36.8	143.3	32.3	29.5	182
B	1	10	2.09	577	37.8	8.9	41.6	42.8	248
B	20	200	2.41	565	38.6	128.7	29.4	26.7	164
C	1	10	2.08	582	39.9	8.1	37.8	38.8	200
C	20	200	2.40	570	40.3	113.3	26.0	23.6	139

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Vol. 68, Issue 16 - 2019-08-20

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