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Abstract

Polarized photodetection technology has good application value in the fields of remote sensing imaging, environmental monitoring, medical detection and military equipment. Polarized photodetectors based on low-dimensional materials can use the natural anisotropy of materials to detect polarized information. Some two-dimensional materials have strong in-plane anisotropy due to their low-symmetrical crystal structure, such as black-phosphorus, black-arsenic, ReS ₂, GaTe, GeSe, GeAs, and TiS ₃. These anisotropic two-dimensional materials are appropriate for the working medium of polarized photodetectors. Numerous researchs focused on polarized photodetectors with different materials and device structures and our works are introduced. Polarized photodetectors based on such low-dimensional materials have realized a broadband photodetection, including ultraviolet, visible, and infrared lights.

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Authors and contacts

Corresponding author:Wei Zhong-Ming,zmwei@semi.ac.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 61622406).

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	禁带宽度/eV	载流子迁移率/cm²·V^–1·s^–1	光响应强度	二向色性比值	参考文献
黑磷	0.3 (体材料) 1.5 (单层)	1000 (空穴,x)600 (空穴,y)	14.2 mA/W	8.7 (1550 nm)	[29]
黑砷	0.3 (体材料)1— 1.5 (单层)	376.7 (电子, zigzag)1.5 (电子, armchair) 60.7 (空穴, zigzag)10606 (空穴, armchair)			[14,30]
锑烯	1.3—1.7			100 (3.2 eV)	[31]
ReS₂	1.4 (体材料)	23.1 (电子, DS-chains方向)14.8 (电子, 垂直DS-chains方向)	10³A·W^–1(532 nm)	~ 4	[32,33]
ReSe₂	1.17—1.2	10	1.5 mA·W^–1(633 nm)	2 (633 nm)	[34]
MoTe₂	外尔半金属		110 mA·W^–1(1064 nm)		[10]
WTe₂	外尔半金属			4.9 (514.5 nm)	[35]
GaTe	1.7	0.2 (空穴)	10⁴A·W^–1(532 nm)		[36]
TlSe	0.73		1.48 A·W^–1(633 nm)	2.56 (633 nm)	[37]
SnS	1.3	20 (zisgzag)μ_zigzag/μ_armchair≈ 1.7	365 A·W^–1(808 nm)	1.49 (808 nm)	[38,39]
GeSe	1.34 (体材料) 1.7 (单层)		4.25 A·W^–1	2.16 (808 nm)	[40]
GeS₂	> 3			2.1 (325 nm)	[41]
GeSe₂	2.74			3.4 (450 nm)	[42]
GeAs	0.83 (体材料) 2.07 (单层)			4.4 (808 nm)	[43]
GeP	0.51 (体材料) 1.68 (单层)	电导率比值: 1.52	3.11—0.43 A·W^–1	1.83 (532 nm)	[44]
GeAs₂	0.98 (体材料) 1.62 (单层)	2.5 (空穴,a)1.3 (空穴,b)		2	[45]
ZrS₃	1.79 (体材料)		230 m A·W^–1(520 nm)	2.55 (520 nm)	[46]
TiS₃	1.13		2500 A·W^–1(808 nm)	4	[47]
α-MoO₃	2.7	0.06–0.09 (电子,b)0.03—0.04 (电子,c)	67.9 A·W^–1	5 (254 nm)	[12]

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Vol. 68, Issue 16 - 2019-08-20

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