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Abstract

In the past, the memristor model and its application research have mainly focused on constructing and analyzing the memristor model and its equivalent circuit model based on the basic concept of memristor, while the research based on commercial memristive devices in the market has been rare. According to the theoretical relationship between meminductor and memristor, a new model of meminductor is constructed based on Knowm memristor, the first commercial memristor chip in the world, combined with the second-generation current conveyor and transconductance operational amplifier. By adjusting the frequency and the amplitude of the input voltage and the transconductance gain of the transconductance operational amplifier, the continuous adjustment of the meminductance can be effectively achieved in the circuit. The LTspice circuit model and hardware experimental circuit of the proposed meminductor are designed. The validity of the new meminductor model and the correctness of the design method are verified by LTspice simulations and circuit experiments.

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Authors and contacts

Corresponding author:Wang Fa-Qiang,faqwang@mail.xjtu.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 51377124) and the New Star of Youth Science and Technology of Shaanxi Province, China (Grant No. 2016KJXX-40)

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[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]

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元件	参数值
${V_{{\rm{dd}}}}$/V	$ \pm {\rm{10 }}$
${V_{\rm{m}}}$/mV	60
${R_{\rm{1}}}$/kΩ	56
${R_2}$/kΩ	56
${R_6}$/kΩ	51
${R_7}$/kΩ	200
$C$	$100\;{\rm{ nF}}-{R_3} = {R_4} = 43\;{\rm{k}}\Omega,{R_5} = 22\;{\rm{k}}\Omega $
	${\rm{47\;nF}}-{R_3} = {R_4}={\rm{80\;k}}\Omega,{R_5}={\rm{40\;k}}\Omega $
	$10\;{\rm{ nF}}-{R_3} = {R_4} = 100\;{\rm{ k}}\Omega,{R_5} = 50\;{\rm{ k}}\Omega $

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[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]

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Vol. 68, Issue 19 - 2019-10-05

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