Preparation, optical, and electrical properties of rubrene∶MoO<sub>3</sub> films

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Abstract

In this paper, the mixed films with different rubrene-to-MoO ₃ratios are deposited on the substrates of Si, indium tin oxide and quartz glass by using the thermal evaporation technique. First, these films are characterized by atomic force microscopy and X-ray diffraction in order to identify their surface morphology and their structure properties. The results show that all the films are amorphous and the film has the best flatness when the rubrene-to-MoO ₃ratio is 2∶1. Second, the optical properties of the mixed films are investigated by both photoluminescence (PL) spectra and absorption spectra. The optical band gap of rubrene and MoO ₃are 2.2 eV and 3.49 eV respectively and there is almost no absorption about rubrene and MoO ₃in the near-infrared (NIR) region. However the PL spectrum shows a peak in NIR region and it indicates that the interface between rubrene and MoO ₃possesses an abrupt discontinuity at the vacuum level, resulting in electron wave functions overlapping and charge-transfer complex (CTC) forming. The intermediate state within the original band gap of rubrene with energy of 1.25 eV is induced by the CTC, which suggests the possibility of charge transfer exciton generated upon NIR excitation. The absorption spectra of the mixed films show that there is an obvious absorption. All the films have the same absorption peak except the film with a rubrene-to-MoO ₃ratio of 4∶1 and it indicates that the concentration of MoO ₃has almost no influence on the absorption of the mixed films. The optical band gaps of the mixed thin films are calculated in a spectral range of 345－1035 nm according to the Tauc equation, and the results show that the optical band gap of the film with a rubrene-to-MoO ₃ratio of 2∶1 is narrowest (~2.23 eV). In order to study the electrical characteristics of the mixed films, an Al/rubrene:MoO ₃/ITO device is fabricated. The current density-voltage ( J- V) characteristic is also investigated. The analysis of the J- Vmeasurement for the device indicates that the current conduction in the Al/rubrene:MoO ₃/ITO device is Ohmic type when the rubrene-to-MoO ₃ratios are 4∶1 and 2∶1, and it is Schottky type when the ratio is other value. The current for rubrene-to-MoO ₃ratio of 1∶1 is larger than that for 1∶2, which indicates that the contact is better when the surface is more smooth. These properties of the mixed films can result in the applications in the near-infrared region.

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Authors and contacts

Corresponding author:Deng Jin-Xiang,jdeng@bjut.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant Nos. 60876006, 60376007), the Natural Science Foundation of Beijing, China (Grant No. 4192016), and the Funding for the Development Project of Beijing Municipal Education Commission of Science and Technology, China (Grant No. KZ201410005008).

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Rubrene∶MoO₃	4∶1	2∶1	1∶1	1∶2	1∶4
能隙E_g/eV	2.24	2.23	2.25	2.25	2.25

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Vol. 68, Issue 17 - 2019-09-05

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