- 必威体育下载

姓名
邮箱
手机号码
标题
留言内容
验证码

Abstract

In recent years, amorphous InGaZnO thin-film transistor (InGaZnO TFT) has attracted intensive attention. Due to its high mobility, low off-state current, and excellent uniformity over large fabrication area, the InGaZnO TFTs promise to replace silicon-based TFTs in flat panel displays, optical image sensors, touch sensing and fingerprint sensing area. The on-state performances of InGaZnO TFT are used in thin film transistor liquid crystal display, active-matrix organic light emitting display, etc. Consequently, numerous on-current models have been proposed previously. However, for lots of the emerging sensing applications such as optical image sensors, the leakage current of InGaZnO TFTs is critical. Previous literature has shown that the leakage current generation mechanisms in TFTs include trap-assisted thermal emission, trap-assisted field emission, inter-band tunneling, and auxiliary thermal electron field emission containing Poole-Frenkel effect. However, up to now, there has been few reports on the leakage current model of InGaZnO TFT, which hinders further the development of emerging applications in InGaZnO TFTs for sensor and imagers integrated in display panels. In this paper, the leakage current model of InGaZnO TFT is established on the basis of carrier generation recombination rate. The feasibility of the proposed model is proved by comparing the TCAD simulations with the measured results. In addition, the influences of geometrical parameters on the leakage current of InGaZnO TFT, i.e. the channel width, the active layer thickness, and the gate dielectric thickness, are analyzed in detail. This research gives insightful results for designing the sensors and circuits by using the InGaZnO TFTs.

Keywords:

Authors and contacts

Corresponding author:Liao Cong-Wei,289114489@qq.com

Funds:Project supported by the National Key Research and Development Program of China (Grant No. 2017YFA0204600), the National Natural Science Foundation of China (Grant No. 61404002), and the Fundamental Research Funds for the Central Universities of Central South University, China (Grant No. 2018zzts344).

FullText HTML: translate this paragraph

References

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]

Cited By

DownLoad: Full-Size Img PowerPoint

参数	数值
栅介质层厚度/nm	150
a-InGaZnO半导体层厚度/nm	40
沟道宽度/${\text{μ}}{\rm{m}}$	300
沟道长度/${\text{μ}}{\rm{m}}$	50

DownLoad: CSV

参数	描述	数值	单位
nta	导带尾类受主能态密度	1.04 × 10¹⁹	cm^–3·eV^–1
ntd	价带尾类施主能态密度	5.0 × 10²⁰	cm^–3·eV^–1
wta	类受主态特征能量	0.04	eV
wtd	类施主态特征能量	0.1	eV
nga	高斯分布的受主态密度	0	cm^–3·eV^–1
ngd	高斯分布的施主态密度	2.0 × 10¹⁶	cm^–3·eV^–1
egd	高斯分布施主能态峰值能量	2.9	eV
wgd	高斯分布施主能态特征能量	0.1	eV

DownLoad: CSV

[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
[26]
[27]
[28]
[29]

[1]	Peng Chao, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Ma Teng, Cai Zong-Qi, Chen Yi-Qiang.Study on characteristics of neutron-induced leakage current increase for SiC power devices. Acta Physica Sinica, 2023, 72(18): 186102.doi:10.7498/aps.72.20230976
[2]	Liu Dong-Ji, Ma Yuan-Yuan, He Jin-Bai, Wang Hao, Zhou Yuan-Xiang, Sun Guan-Yue, Zhao Hong-Feng.ZnO varistors with low leakage current and high stability arrester with Ga doping. Acta Physica Sinica, 2023, 72(6): 067301.doi:10.7498/aps.72.20222233
[3]	Ma Qun-Gang, Wang Hai-Hong, Zhang Sheng-Dong, Chen Xu, Wang Ting-Ting.Electro-static discharge protection analysis and design optimization of interlayer Cu interconnection in InGaZnO thin film transistor backplane. Acta Physica Sinica, 2019, 68(15): 158501.doi:10.7498/aps.68.20190646
[4]	Ma Qun-Gang, Zhou Liu-Fei, Yu Yue, Ma Guo-Yong, Zhang Sheng-Dong.Electro-static discharge failure analysis and design optimization of gate-driver on array circuit in InGaZnO thin film transistor backplane. Acta Physica Sinica, 2019, 68(10): 108501.doi:10.7498/aps.68.20190265
[5]	Wang Xiang, Chen Lei-Lei, Cao Yan-Rong, Yang Qun-Si, Zhu Pei-Min, Yang Guo-Feng, Wang Fu-Xue, Yan Da-Wei, Gu Xiao-Feng.Physical model of conductive dislocations in GaN Schottky diodes. Acta Physica Sinica, 2018, 67(17): 177202.doi:10.7498/aps.67.20180762
[6]	Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Luo Heng, Liu Sheng, Deng Lian-Wen.Floating gate effect in amorphous InGaZnO thin-film transistor. Acta Physica Sinica, 2018, 67(4): 047302.doi:10.7498/aps.67.20172325
[7]	Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Deng Lian-Wen.Analytical channel potential model of amorphous InGaZnO thin-film transistors with synchronized symmetric dual-gate. Acta Physica Sinica, 2017, 66(9): 097101.doi:10.7498/aps.66.097101
[8]	Tang Du, He Chao-Hui, Zang Hang, Li Yong-Hong, Xiong Cen, Zhang Jin-Xin, Zhang Peng, Tan Peng-Kang.Multi-scale simulations of single particle displacement damage in silicon. Acta Physica Sinica, 2016, 65(8): 084209.doi:10.7498/aps.65.084209
[9]	Zhang Shi-Yu, Yu Zhi-Nong, Cheng Jin, Wu De-Long, Li Xu-Yang, Xue Wei.Effects of annealing temperature and Ga content on properties of solution-processed InGaZnO thin film. Acta Physica Sinica, 2016, 65(12): 128502.doi:10.7498/aps.65.128502
[10]	Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu.A Model of channel current for uniaxially strained Si NMOSFET. Acta Physica Sinica, 2015, 64(19): 197301.doi:10.7498/aps.64.197301
[11]	Xu Hua, Lan Lin-Feng, Li Min, Luo Dong-Xiang, Xiao Peng, Lin Zhen-Guo, Ning Hong-Long, Peng Jun-Biao.Effect of source/drain preparation on the performance of oxide thin-film transistors. Acta Physica Sinica, 2014, 63(3): 038501.doi:10.7498/aps.63.038501
[12]	Li Wei-Qin, Liu Ding, Zhang Hai-Bo.Leakage current characteristics of the insulating sample under high-energy electron irradiation. Acta Physica Sinica, 2014, 63(22): 227303.doi:10.7498/aps.63.227303
[13]	Wen Juan-Hui, Yang Qiong, Cao Jue-Xian, Zhou Yi-Chun.Strain control of the leakage current of the ferroelectric thin films. Acta Physica Sinica, 2013, 62(6): 067701.doi:10.7498/aps.62.067701
[14]	Zhang Geng-Ming, Guo Li-Qiang, Zhao Kong-Sheng, Yan Zhong-Hui.Effect of oxygen on stability performance of the IZO junctionless thin film transistors. Acta Physica Sinica, 2013, 62(13): 137201.doi:10.7498/aps.62.137201
[15]	Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Li Yu-Chen.Analytical modeling for drain current of strained Si NMOSFET. Acta Physica Sinica, 2013, 62(23): 237103.doi:10.7498/aps.62.237103
[16]	Chen Hai-Feng, Guo Li-Xin.Influence of gate voltage on gate-induced drain leakage current in ultra-thin gate oxide and ultra-short channel LDD nMOSFET's. Acta Physica Sinica, 2012, 61(2): 028501.doi:10.7498/aps.61.028501
[17]	Zhuo Qing-Qing, Liu Hong-Xia, Yang Zhao-Nian, Cai Hui-Min, Hao Yue.The total dose irradiation effects of SOI NMOS devices under different bias conditions. Acta Physica Sinica, 2012, 61(22): 220702.doi:10.7498/aps.61.220702
[18]	Tang Dong-He, Du Lei, Wang Ting-Lan, Chen Hua, Jia Xiao-Fei.A unified scattering theory model for current noise in nanoscale devices. Acta Physica Sinica, 2011, 60(9): 097202.doi:10.7498/aps.60.097202
[19]	Wang Si-Hao, Lu Qing, Wang Wen-Hua, An Xia, Huang Ru.The improvement on total ionizing dose （TID） effects of the ultra-deep submicron MOSFET featuring delta doping profiles. Acta Physica Sinica, 2010, 59(3): 1970-1976.doi:10.7498/aps.59.1970
[20]	Hao Yue, Han Xin-Wei, Zhang Jin-Cheng, Zhang Jin-Feng.Current slump mechanism and its physical model of AlGaN/GaN HEMTs under DC bias. Acta Physica Sinica, 2006, 55(7): 3622-3628.doi:10.7498/aps.55.3622

Catalog

Vol. 68, Issue 5 - 2019-03-05

Metrics

Abstract views:10295
PDF Downloads:232
Cited By:0

Search

Article