[1] |
Huang Xin-Yu, Zhang Jin-Xin, Wang Xin, Lü Ling, Guo Hong-Xia, Feng Juan, Yan Yun-Yi, Wang Hui, Qi Jun-Xiang.Numerical simulation of single-particle transients in low-noise amplifiers based on silicon-germanium heterojunction bipolar transistors and inverse-mode structures. Acta Physica Sinica, 2024, 73(12): 126103.doi:10.7498/aps.73.20240307 |
[2] |
Li Pei, Dong Zhi-Yong, Guo Hong-Xia, Zhang Feng-Qi, Guo Ya-Xin, Peng Zhi-Gang, He Chao-Hui.Investigation of laser-induced single event effect on SiGe BiCMOS low noise amplifiers. Acta Physica Sinica, 2024, 73(4): 044301.doi:10.7498/aps.73.20231451 |
[3] |
Yang Wei-Tao, Hu Zhi-Liang, He Huan, Mo Li-Hua, Zhao Xiao-Hong, Song Wu-Qing, Yi Tian-Cheng, Liang Tian-Jiao, He Chao-Hui, Li Yong-Hong, Wang Bin, Wu Long-Sheng, Liu Huan, Shi Guang.Neutron induced single event effects on near-memory computing architecture AI chips. Acta Physica Sinica, 2024, 73(13): 138502.doi:10.7498/aps.73.20240430 |
[4] |
Ju An-An, Guo Hong-Xia, Zhang Feng-Qi, Liu Ye, Zhong Xiang-Li, Ouyang Xiao-Ping, Ding Li-Li, Lu Chao, Zhang Hong, Feng Ya-Hui.Simulation research on single event effect of N-well resistor. Acta Physica Sinica, 2023, 72(2): 026102.doi:10.7498/aps.72.20220125 |
[5] |
Shen Rui-Xiang, Zhang Hong, Song Hong-Jia, Hou Peng-Fei, Li Bo, Liao Min, Guo Hong-Xia, Wang Jin-Bin, Zhong Xiang-Li.Numerical simulation of single-event effects in fully-depleted silicon-on-insulator HfO2-based ferroelectric field-effect transistor memory cell. Acta Physica Sinica, 2022, 71(6): 068501.doi:10.7498/aps.71.20211655 |
[6] |
Fu Jing, Cai Yu-Long, Li Yu-Dong, Feng Jie, Wen Lin, Zhou Dong, Guo Qi.Single event transient effect of frontside and backside illumination image sensors under proton irradiation. Acta Physica Sinica, 2022, 71(5): 054206.doi:10.7498/aps.71.20211838 |
[7] |
Xu Yu, Wang Chao-Liang, Qin Si-Cheng, Zhang Yu, He Tao, Guo Ying, Ding Ke, Zhang Yu-Ru, Yang Wei, Shi Jian-Jun, Du Cheng-Ran, Zhang Jing.Treatment uniformity of atmospheric pressure plasma on flexible and porous material surface: A critical review. Acta Physica Sinica, 2021, 70(9): 099401.doi:10.7498/aps.70.20210077 |
[8] |
Wang Xun, Zhang Feng-Qi, Chen Wei, Guo Xiao-Qiang, Ding Li-Li, Luo Yin-Hong.Application and evaluation of Chinese spallation neutron source in single-event effects testing. Acta Physica Sinica, 2019, 68(5): 052901.doi:10.7498/aps.68.20181843 |
[9] |
Niu Chen, Liu Zhong-Wei, Yang Li-Zhen, Chen Qiang.Effect of standing wave on the uniformity of a low magnetic field helicon plasma. Acta Physica Sinica, 2017, 66(4): 045201.doi:10.7498/aps.66.045201 |
[10] |
Zhong Zhe-Qiang, Hou Peng-Cheng, Zhang Bin.A novel radial beam smoothing scheme based on optical Kerr effect. Acta Physica Sinica, 2016, 65(9): 094207.doi:10.7498/aps.65.094207 |
[11] |
Zhao Wen, Guo Xiao-Qiang, Chen Wei, Qiu Meng-Tong, Luo Yin-Hong, Wang Zhong-Ming, Guo Hong-Xia.Effects of nuclear reactions between protons and metal interconnect overlayers on single event effects of micro/nano scaled static random access memory. Acta Physica Sinica, 2015, 64(17): 178501.doi:10.7498/aps.64.178501 |
[12] |
Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin.Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2015, 64(11): 118502.doi:10.7498/aps.64.118502 |
[13] |
Zhang Jin-Xin, He Chao-Hui, Guo Hong-Xia, Tang Du, Xiong Cen, Li Pei, Wang Xin.Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2014, 63(24): 248503.doi:10.7498/aps.63.248503 |
[14] |
Xiao Yao, Guo Hong-Xia, Zhang Feng-Qi, Zhao Wen, Wang Yan-Ping, Ding Li-Li, Fan Xue, Luo Yin-Hong, Zhang Ke-Ying.Synergistic effects of total ionizing dose on the single event effect sensitivity of static random access memory. Acta Physica Sinica, 2014, 63(1): 018501.doi:10.7498/aps.63.018501 |
[15] |
Zhang Jin-Xin, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Xi Shan-Bin, Wang Xin, Deng Wei.3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2013, 62(4): 048501.doi:10.7498/aps.62.048501 |
[16] |
Liu Bi-Wei, Chen Jian-Jun, Chen Shu-Ming, Chi Ya-Qin.NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n+ deep well. Acta Physica Sinica, 2012, 61(9): 096102.doi:10.7498/aps.61.096102 |
[17] |
Pan Jin-Yan, Gao Yun-Long, Zhang Wen-Yan.High luminance carbon nanotube field emission cold cathode based on indium tin oxide/Ti composite electrode. Acta Physica Sinica, 2010, 59(12): 8762-8769.doi:10.7498/aps.59.8762 |
[18] |
Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Wang Yue-Hu.Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD. Acta Physica Sinica, 2008, 57(10): 6649-6653.doi:10.7498/aps.57.6649 |
[19] |
Li He, Li Xue-Dong, Li Juan, Wu Chun-Ya, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Li-Zhu.Investigation on the improvement of the stability and uniformity of solution-based metal-induced crystallization poly-Si using surface-embellishment. Acta Physica Sinica, 2008, 57(4): 2476-2480.doi:10.7498/aps.57.2476 |
[20] |
He Chao-Hui, Geng Bin, Yang Hai-Liang, Chen Xiao-Hua, Wang Yan-Ping, Li Guo-Zheng.Experimental study on irradiation effects in floating gate ROMs. Acta Physica Sinica, 2003, 52(1): 180-187.doi:10.7498/aps.52.180 |