[1] |
Liu Qing-Bin, Yu Cui, Guo Jian-Chao, Ma Meng-Yu, He Ze-Zhao, Zhou Chuang-Jie, Gao Xue-Dong, Yu Hao, Feng Zhi-Hong.Influence of polycrystalline diamond on silicon-based GaN material. Acta Physica Sinica, 2023, 72(9): 098104.doi:10.7498/aps.72.20221942 |
[2] |
Lei Zhen-Shuai, Sun Xiao-Wei, Liu Zi-Jiang, Song Ting, Tian Jun-Hong.Phase diagram prediction and high pressure melting characteristics of GaN. Acta Physica Sinica, 2022, 71(19): 198102.doi:10.7498/aps.71.20220510 |
[3] |
Yuan Ying-Kuo, Guo Wei-Ling, Du Zai-Fa, Qian Feng-Song, Liu Ming, Wang Le, Xu Chen, Yan Qun, Sun Jie.Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode. Acta Physica Sinica, 2021, 70(19): 197801.doi:10.7498/aps.70.20210122 |
[4] |
Xie Fei, Zang Hang, Liu Fang, He Huan, Liao Wen-Long, Huang Yu.Simulated research on displacement damage of gallium nitride radiated by different neutron sources. Acta Physica Sinica, 2020, 69(19): 192401.doi:10.7498/aps.69.20200064 |
[5] |
Zhang Zhi-Rong, Fang Yu-Long, Yin Jia-Yun, Guo Yan-Min, Wang Bo, Wang Yuan-Gang, Li Jia, Lu Wei-Li, Gao Nan, Liu Pei, Feng Zhi-Hong.Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates. Acta Physica Sinica, 2018, 67(7): 076801.doi:10.7498/aps.67.20172581 |
[6] |
He Ju-Sheng, Zhang Meng, Pan Hua-Qing, Zou Ji-Jun, Qi Wei-Jing, Li Ping.Determination of dislocation density of a class of n-GaN based on the variable temperature Hall-effect method. Acta Physica Sinica, 2017, 66(6): 067201.doi:10.7498/aps.66.067201 |
[7] |
Wang Bo, Fang Yu-Long, Yin Jia-Yun, Liu Qing-Bin, Zhang Zhi-Rong, Guo Yan-Min, Li Jia, Lu Wei-Li, Feng Zhi-Hong.Effect of surface pretreatment on GaN van der Waals epitaxy growth on graphene. Acta Physica Sinica, 2017, 66(24): 248101.doi:10.7498/aps.66.248101 |
[8] |
Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang.Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica, 2017, 66(15): 158501.doi:10.7498/aps.66.158501 |
[9] |
Feng Bo, Deng Biao, Liu Le-Gong, Li Zeng-Cheng, Feng Mei-Xin, Zhao Han-Min, Sun Qian.Effect of plasma surface treatment on embedded n-contact for GaN-based blue light-emitting diodes grown on Si substrate. Acta Physica Sinica, 2017, 66(4): 047801.doi:10.7498/aps.66.047801 |
[10] |
Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi.Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801.doi:10.7498/aps.64.107801 |
[11] |
Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica, 2015, 64(18): 187801.doi:10.7498/aps.64.187801 |
[12] |
Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate. Acta Physica Sinica, 2015, 64(17): 177804.doi:10.7498/aps.64.177804 |
[13] |
Liu Mu-Lin, Min Qiu-Ying, Ye Zhi-Qing.Efficiency droop in blue InGaN/GaN light emitting diodes on Si substrate. Acta Physica Sinica, 2012, 61(17): 178503.doi:10.7498/aps.61.178503 |
[14] |
Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi.Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica, 2011, 60(7): 078503.doi:10.7498/aps.60.078503 |
[15] |
Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie.A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica, 2011, 60(9): 098107.doi:10.7498/aps.60.098107 |
[16] |
Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di.Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica, 2010, 59(2): 1233-1236.doi:10.7498/aps.59.1233 |
[17] |
Jiang Yang, Luo Yi, Wang Lai, Li Hong-Tao, Xi Guang-Yi, Zhao Wei, Han Yan-Jun.Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structures. Acta Physica Sinica, 2009, 58(5): 3468-3473.doi:10.7498/aps.58.3468 |
[18] |
Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao.Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193.doi:10.7498/aps.58.7189 |
[19] |
Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling.Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2008, 57(1): 472-476.doi:10.7498/aps.57.472 |
[20] |
Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |