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Xia Yong-Shun, Yang Xiao-Kuo, Dou Shu-Qing, Cui Huan-Qing, Wei Bo, Liang Bu-Jia, Yan Xu.Ultra-low power magneto-elastic analog-to-digital converter based on magnetic tunnel junctions and bicomponent multiferroic nanomagnet. Acta Physica Sinica, 2024, 73(13): 137502.doi:10.7498/aps.73.20240129 |
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Luo Yin-Hong, Zhang Feng-Qi, Guo Hong-Xia, Wojtek Hajdas.Prediction of proton single event upset sensitivity based on heavy ion test data in nanometer hardened static random access memory. Acta Physica Sinica, 2020, 69(1): 018501.doi:10.7498/aps.69.20190878 |
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.Mechanisms of Alpha Particle Induced Soft Errors in Nanoscale Static Random Access Memories. Acta Physica Sinica, 2020, (): 006100.doi:10.7498/aps.69.20191796 |
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Zhang Zhan-Gang, Ye Bing, Ji Qing-Gang, Guo Jin-Long, Xi Kai, Lei Zhi-Feng, Huang Yun, Peng Chao, He Yu-Juan, Liu Jie, Du Guang-Hua.Mechanisms of alpha particle induced soft errors in nanoscale static random access memories. Acta Physica Sinica, 2020, 69(13): 136103.doi:10.7498/aps.69.20201796 |
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Liu Wan-Xin, Chen Rui, Liu Yong-Jie, Wang Jun-Feng, Han Xiao-Tao, Yang Ming.A pulsed high magnetic field facility for electric polarization measurements. Acta Physica Sinica, 2020, 69(5): 057502.doi:10.7498/aps.69.20191520 |
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Sheng Yu, Zhang Nan, Wang Kai-You, Ma Xing-Qiao.Demonstration of four-state memory structure with perpendicular magnetic anisotropy by spin-orbit torque. Acta Physica Sinica, 2018, 67(11): 117501.doi:10.7498/aps.67.20180216 |
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Ju An-An, Guo Hong-Xia, Zhang Feng-Qi, Guo Wei-Xin, Ouyang Xiao-Ping, Wei Jia-Nan, Luo Yin-Hong, Zhong Xiang-Li, Li Bo, Qin Li.Experimental study about single event functional interrupt of ferroelectric random access memory induced by 30-90 MeV proton. Acta Physica Sinica, 2018, 67(23): 237803.doi:10.7498/aps.67.20181225 |
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Qin Li, Guo Hong-Xia, Zhang Feng-Qi, Sheng Jiang-Kun, Ouyang Xiao-Ping, Zhong Xiang-Li, Ding Li-Li, Luo Yin-Hong, Zhang Yang, Ju An-An.Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons. Acta Physica Sinica, 2018, 67(16): 166101.doi:10.7498/aps.67.20180829 |
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Cai Tian-Yi, Ju Sheng.Photovoltaic effect in ferroelectrics. Acta Physica Sinica, 2018, 67(15): 157801.doi:10.7498/aps.67.20180979 |
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Xu Meng, Yan Jian-Min, Xu Zhi-Xue, Guo Lei, Zheng Ren-Kui, Li Xiao-Guang.Progresses of magnetoelectric composite films based on PbMg1/3Nb2/3O3-PbTiO3 single-crystal substrates. Acta Physica Sinica, 2018, 67(15): 157506.doi:10.7498/aps.67.20180911 |
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Luo Yin-Hong, Zhang Feng-Qi, Wang Yan-Ping, Wang Yuan-Ming, Guo Xiao-Qiang, Guo Hong-Xia.Single event upsets sensitivity of low energy proton in nanometer static random access memory. Acta Physica Sinica, 2016, 65(6): 068501.doi:10.7498/aps.65.068501 |
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Luo Yin-Hong, Zhang Feng-Qi, Guo Hong-Xia, Guo Xiao-Qiang, Zhao Wen, Ding Li-Li, Wang Yuan-Ming.Angular dependence of proton single event multiple-cell upsets in nanometer SRAM. Acta Physica Sinica, 2015, 64(21): 216103.doi:10.7498/aps.64.216103 |
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Chen Yan-Bin, Zhang Fan, Zhang Lun-Yong, Zhou Jian, Zhang Shan-Tao, Chen Yan-Feng.Exploring multiferroic materials based on artificial superlattice LaFeO3-YMnO3 and natural superlattice n-LaFeO3-Bi4Ti3O12 thin films. Acta Physica Sinica, 2015, 64(9): 097502.doi:10.7498/aps.64.097502 |
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Yang Jin, Zhou Mao-Xiu, Xu Tai-Long, Dai Yue-Hua, Wang Jia-Yu, Luo Jing, Xu Hui-Fang, Jiang Xian-Wei, Chen Jun-Ning.Composite interfaces and electrode properties of resistive random access memory devices. Acta Physica Sinica, 2013, 62(24): 248501.doi:10.7498/aps.62.248501 |
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Zhang Xing-Yao, Guo Qi, Lu Wu, Zhang Xiao-Fu, Zheng Qi-Wen, Cui Jiang-Wei, Li Yu-Dong, Zhou Dong.Serial ferroelectric memory ionizing radiation effects and annealing characteristics. Acta Physica Sinica, 2013, 62(15): 156107.doi:10.7498/aps.62.156107 |
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Chen Qiang, Zhong Chong-Gui, Yuan Guo-Qiu, Dong Zheng-Chao, Fang Jing-Huai.Research on optical absorption and distortion driving in multiferroic HoMnO3 from the first principles. Acta Physica Sinica, 2013, 62(12): 127502.doi:10.7498/aps.62.127502 |
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Hao Jian-Hong, Gao Hui.Micromagnetic simulation of magnetization reversal on the annular free layer with nick in magnetic random access memory. Acta Physica Sinica, 2013, 62(5): 057502.doi:10.7498/aps.62.057502 |
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Guo Xi, Wang Xia, Zheng Wu, Tang Wei-Hua.Dielectric properties of Eu-doped polycrystalline TbMnO3. Acta Physica Sinica, 2010, 59(4): 2815-2819.doi:10.7498/aps.59.2815 |
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Peng Zi-Long, Han Xiu-Feng, Zhao Su-Fen, Wei Hong-Xiang, Du Guan-Xiang, Zhan Wen-Shan.Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM. Acta Physica Sinica, 2006, 55(2): 860-864.doi:10.7498/aps.55.860 |
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Sun Jin-Peng, Wang Tai-Hong.. Acta Physica Sinica, 2002, 51(9): 2096-2100.doi:10.7498/aps.51.2096 |