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Abstract

Advanced transmission electron microscopy combined with in situ techniques provides powerful ability to characterize the dynamic behaviors of phase transitions, composition changes and potential variations in the nanomaterials and devices under external electric field. In this paper, we review some important progress, in this field, of the explanation of structural transition path caused by the Joule heating in C60 nanowhikers, the clarification of electron storage position in charge trapping memory and the direct evidences of the oxygen vacancy channel and the conductive filament formation in resistive random access memory. These studies could improve an understanding of the basic mechanism of nanomaterial and device performance, and also demonstrate the diversity of the functions of transmission electron microscopy in microelectronic field.

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Corresponding author:Kang Jin-Feng,rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn; Liu Ming,rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn; Yu Ri-Cheng,rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn

Funds:Project supported by the National Key RD Program of China (Grant No. 2016YFA0300701), the National Basic Research Program of China (Grant Nos. 2013CB932904, 2012CB932302, 2010CB934202), and the National Natural Science Foundation of China (Grant Nos. 11374343, 61421005, 11574376, 11174336, 61334007, 10974235, 11274365).

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Vol. 67, Issue 12 - 2018-06-20

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Corresponding author:Kang Jin-Feng,rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn; Liu Ming,rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn; Yu Ri-Cheng,rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn

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Corresponding author:Kang Jin-Feng,rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn; Liu Ming,rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn; Yu Ri-Cheng,rcyu@iphy.ac.cn;kangjf@pku.edu.cn;liuming@ime.ac.cn

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