According to density functional theory calculations, we elucidate the atomic and electronic structure of -(Zn, Cr)S(111) surface. The magnetic interaction between Cr atoms is via S atoms close to the Cr layer. This interaction is shown by the analysis of spin charge contour plot and partial density of states (DOS) of each atom. The DOSs of other S atoms are non magnetic and have no magnetic exchange with the Cr layer. E(q) and E(-q) are the dispersions between energy E and wave vector q of spin spiral in the opposite directions. They are calculated with generalized Bloch equations and all the magnetic moments of Cr atoms are arranged in the plane perpendicular to the -(Zn, Cr)S(111) film. The differences between E(q) and E(-q) are caused by the interface of -(Zn, Cr)S(111), where the symmetry of space perpendicular to the film is broken. Effective Heisenberg exchange interaction (HBI) and Dzyaloshinsky-Moriya interaction (DMI) parameters between different neighbors (Ji and di) are derived by well fitting the ab initio spin spiral dispersion E(q) to HBI with DMI model and E(q)-E(-q) to DMI model, respectively. The J2 plays a major role with a large negative value of -9.04 meV. The J1 is about 2/5 of J2, and J3 is about 1/4 of J2 with positive value. The DMI d1 is -0.53 meV, and d2 is 0.07 meV. With these HBI parameters, E(0) is the largest one at which -(Zn, Cr)S(111) has no ferromagnetic interface. The E(q) has its lowest energy with the q at M=b1/2 in the first Brillouin zone. Hence, -(Zn, Cr)S(111) is an M-type antiferromagnetic (AFM) material. In this type of AFM configuration, magnetic moments of Cr atom in a line along b2 are parallel to each other, and antiparallel to the magnetic moments in adjacent lines. The E(q) at K=b1/2+ b2/2 is almost as large as that at point. The value of DMI parameter d1 is about 1/5 of that on Co/Pt3 interface and 1/2 of Co/graphene. However, it is a negative number, which shows the clockwise chirality. The -(Zn, Cr)S(111) interface has obvious DMI, and skyrmion may be formed at this transition-metal/semiconductor (TM/S) interface. It is a good option to search for DMI in different kinds of TM/S heterojunctions. The material that combines the advantage of heterojunction, and DMI may have new magnetic phenomenon, which is usefulfor the magnetic storage. This paper enriches the research on DMI.