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Abstract

In order to solve the problem of low light absorption efficiency of single photon detectors based on quantum-dot gated field effect transistor (QDFET), a new type of quantum-dot gated field effect enhanced single-photon detectors (QDFEE-SPD) was proposed. QDFEE-SPD was designed with a resonant cavity, and the GaAs/AlAs multilayer was used as the basic mirror. The light absorption efficiency and responsivity of QDFEE-SPD were analyzed and simulated. Results show that, compared with that without cavity, the absorption efficiency and responsivity of the QDFEE-SPD is greatly improved. Also for the optimization of light absorption efficiency, the thickness of the absorption layer should normally be 0.10.5 m. Then the material samples of QDFEE-SPD were grown and tested. Reflection spectroscopy and PL spectroscopy testing results show that the light absorption efficiency has been significantly enhanced. The achievements in this article provide a new way for researching high-efficiency single-photon detection technology based on QDFET.

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Funds:Project supported by the National Natural Science Foundation of China (Grant No. 61274125), and the Natural Science Foundation of Beijing, China (Grant No. 11DB1262).

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Vol. 62, Issue 19 - 2013-10-05

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