[1] |
Li Wei, Fu Jing, Yang Yun-Yun, He Ji-Zhou.Quantum dot refrigerator driven by photon. Acta Physica Sinica, 2019, 68(22): 220501.doi:10.7498/aps.68.20191091 |
[2] |
Zhou Liang-Liang, Wu Hong-Bo, Li Xue-Ming, Tang Li-Bin, Guo Wei, Liang Jing.ZrS2quantum dots: Preparation, structure, and optical properties. Acta Physica Sinica, 2019, 68(14): 148501.doi:10.7498/aps.68.20190680 |
[3] |
Liang Yu-Hong, Li Hong-Juan, Yin Ji-Wen.Intraband relaxation process in PbSe quantum dot studied by lattice relaxation method. Acta Physica Sinica, 2019, 68(12): 127301.doi:10.7498/aps.68.20190187 |
[4] |
He Yue-Di, Xu Zheng, Zhao Su-Ling, Liu Zhi-Min, Gao Song, Xu Xu-Rong.Electroluminescent energy transfer of hybrid quantum dotsdevice. Acta Physica Sinica, 2014, 63(17): 177301.doi:10.7498/aps.63.177301 |
[5] |
Liu Zhi-Min, Zhao Su-Ling, Xu Zheng, Gao Song, Yang Yi-Fan.Luminescence characteristics of PVK doped with red-emitting quantum dots. Acta Physica Sinica, 2014, 63(9): 097302.doi:10.7498/aps.63.097302 |
[6] |
Zhang Pan-Jun, Sun Hui-Qing, Guo Zhi-You, Wang Du-Yang, Xie Xiao-Yu, Cai Jin-Xin, Zheng Huan, Xie Nan, Yang Bin.The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells. Acta Physica Sinica, 2013, 62(11): 117304.doi:10.7498/aps.62.117304 |
[7] |
Wang Ya-Qin, Wang Jin-Cheng, Li Jun-Jie.Phase field modeling of the growth and competition behavior of tilted dendrites in directional solidification. Acta Physica Sinica, 2012, 61(11): 118103.doi:10.7498/aps.61.118103 |
[8] |
Wang Qi-Wen, Hong Lan.Polaron spin relaxation in a two-dimensional quantum dot. Acta Physica Sinica, 2012, 61(1): 017107.doi:10.7498/aps.61.017107 |
[9] |
Hu Yi-Bin, Hao Zhi-Biao, Hu Jian-Nan, Niu Lang, Wang Lai, Luo Yi.Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy. Acta Physica Sinica, 2012, 61(23): 237804.doi:10.7498/aps.61.237804 |
[10] |
Ju Xin, Guo Jian-Hong.Influence of interdot-coupling on differentialconductance for a triple quantum dot. Acta Physica Sinica, 2011, 60(5): 057302.doi:10.7498/aps.60.057302 |
[11] |
Zhang Xue-Gui, Wang Chong, Lu Zhi-Quan, Yang Jie, Li Liang, Yang Yu.Evolution of Ge/Si quantum dots self-assembledgrown by ion beam sputtering. Acta Physica Sinica, 2011, 60(9): 096101.doi:10.7498/aps.60.096101 |
[12] |
Chen Chang, Luo Dai-Sheng, Gong Min, Ma Yao, Gao Bo, Shi Rui-Ying, Su Ping, Meng Xiang-Hao, Shi Tong-Fei, Cao Xian-Cun.The hole concentration and strain relaxation of ultrathin GaMnAs film. Acta Physica Sinica, 2011, 60(2): 027105.doi:10.7498/aps.60.027105 |
[13] |
Feng Hao, Yu Zhong-Yuan, Liu Yu-Min, Lu Peng-Fei, Jia Bo-Yong, Yao Wen-Jie, Tian Hong-Da, Zhao Wei, Xu Zi-Huan.Theoretical study on strain compensation layer for growth of quantum dots. Acta Physica Sinica, 2010, 59(2): 765-770.doi:10.7498/aps.59.765 |
[14] |
Wang Tian-Qi, Yu Zhong-Yuan, Liu Yu-Min, Lu Peng-Fei.Analysis of strain energy and relaxation degree in different-shaped quantum dots using finite element method. Acta Physica Sinica, 2009, 58(8): 5618-5623.doi:10.7498/aps.58.5618 |
[15] |
Zheng Rui-Lun.Energy of excitons and probability distribution of electrons in columned composite system composed of quantum dots and quantum wires. Acta Physica Sinica, 2007, 56(8): 4901-4907.doi:10.7498/aps.56.4901 |
[16] |
Cai Cheng-Yu, Zhou Wang-Min.The strain distribution and equilibrium morphology of Ge/Si semiconductor quantum dot. Acta Physica Sinica, 2007, 56(8): 4841-4846.doi:10.7498/aps.56.4841 |
[17] |
Deng Yu-Xiang, Yan Xiao-Hong, Tang Na-Si.Electron transport through a quantum dot ring. Acta Physica Sinica, 2006, 55(4): 2027-2032.doi:10.7498/aps.55.2027 |
[18] |
Hou Chun-Feng, Guo Ru-Hai.Energy structures of the elliptic cylindrical quantum dots. Acta Physica Sinica, 2005, 54(5): 1972-1976.doi:10.7498/aps.54.1972 |
[19] |
Zhou Wang-Min, Wang Chong-Yu.The strain distribution of lowdimensional semiconductor materials. Acta Physica Sinica, 2004, 53(12): 4308-4313.doi:10.7498/aps.53.4308 |
[20] |
Huang Jin-Song, Dong Xun, Liu Xiang-Lin, Xu Zhong-Ying, Ge Wei-Kun.A study of the growth and optical properties of AlInGaN alloys. Acta Physica Sinica, 2003, 52(10): 2632-2637.doi:10.7498/aps.52.2632 |