[1] |
Liu Ying, Guo Si-Lin, Zhang Yong, Yang Peng, Lyu Ke-Hong, Qiu Jing, Liu Guan-Jun.Review on 1/fnoise and its research progress in two-dimensional material graphene. Acta Physica Sinica, 2023, 72(1): 017302.doi:10.7498/aps.72.20221253 |
[2] |
Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian.Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2020, 69(20): 207301.doi:10.7498/aps.69.20200714 |
[3] |
Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei.Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model. Acta Physica Sinica, 2015, 64(13): 136104.doi:10.7498/aps.64.136104 |
[4] |
Liu Yu-An, Zhuang Yi-Qi, Du Lei, Su Ya-Hui.1/f noise characterization gamma irradiation of GaN-based blue light-emitting diode. Acta Physica Sinica, 2013, 62(14): 140703.doi:10.7498/aps.62.140703 |
[5] |
Chen Hai-Peng, Cao Jun-Sheng, Guo Shu-Xu.Temperature-dependent relation between junction temperature and 1/f noise in high power semiconductor laser. Acta Physica Sinica, 2013, 62(10): 104209.doi:10.7498/aps.62.104209 |
[6] |
Wu Shao-Bing, Chen Shi, Li Hai, Yang Xiao-Fei.Researching progress of the 1/f noise in TMR and GMR sensors. Acta Physica Sinica, 2012, 61(9): 097504.doi:10.7498/aps.61.097504 |
[7] |
Li Yang, Guo Shu-Xu.A new method to estimate the parameter of 1/f Noise of high power semiconductor laser diode based on sparse decomposition. Acta Physica Sinica, 2012, 61(3): 034208.doi:10.7498/aps.61.034208 |
[8] |
Sun Peng, Du Lei, Chen Wen-Hao, He Liang.A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica, 2012, 61(6): 067801.doi:10.7498/aps.61.067801 |
[9] |
Chen Wen-Hao, Du Lei, Yin Xue-Song, Kang Li, Wang Fang, Chen Song.Investigation on the low-freauency noise physical models and the defects' characterization of the PbS infrared dectector. Acta Physica Sinica, 2011, 60(10): 107202.doi:10.7498/aps.60.107202 |
[10] |
Bao Jun-Lin, Lin Li-Yan, He Liang, Du Lei.Noise as a characteriscic for current transmitting rateof optoelectronic coupled devicesfor ionization radiation damage. Acta Physica Sinica, 2011, 60(4): 047202.doi:10.7498/aps.60.047202 |
[11] |
Zhang Zhen-Guo, Gao Feng-Li, Guo Shu-Xu, Li Xue-Yan, Yu Si-Yao.A novel method to estimate the parameters of 1/f noise of semiconductor laser diodes. Acta Physica Sinica, 2009, 58(4): 2772-2775.doi:10.7498/aps.58.2772 |
[12] |
Liu Yu-An, Du Lei, Bao Jun-Lin.Research on correlation of 1/fγ noise and hot carrier degradation in metal oxide semiconductor field effect transistor. Acta Physica Sinica, 2008, 57(4): 2468-2475.doi:10.7498/aps.57.2468 |
[13] |
Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang.The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica, 2008, 57(9): 5869-5874.doi:10.7498/aps.57.5869 |
[14] |
Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua.Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Physica Sinica, 2008, 57(8): 5205-5211.doi:10.7498/aps.57.5205 |
[15] |
Li Rui-Min, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin.A 1/f noise based research of radiation induced interface trap buildup process. Acta Physica Sinica, 2007, 56(6): 3400-3406.doi:10.7498/aps.56.3400 |
[16] |
Zhong Chong-Xia, Yang Ting-Gao.Use of wiener filtration in wavelet domain in ensemble pulsar time algorithm. Acta Physica Sinica, 2007, 56(10): 6157-6163.doi:10.7498/aps.56.6157 |
[17] |
Hu Qin-Chun, He Yi-Gang, Guo Di-Xin, Li Hong-Min.Analog implementation of wavelet transform based on switched-current filter circuits. Acta Physica Sinica, 2006, 55(2): 641-647.doi:10.7498/aps.55.641 |
[18] |
Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang.Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389.doi:10.7498/aps.55.1384 |
[19] |
Sun Tao, Chen Xing-Guo, Hu Xiao-Ning, Li Yan-Jin.Analysis of surface leakage and 1/f noise on long-wavelength infrared HgCdTe photodiodes. Acta Physica Sinica, 2005, 54(7): 3357-3362.doi:10.7498/aps.54.3357 |
[20] |
Bao Jun-Lin, Zhuang Yi-Qi, Du Lei, Li Wei-Hua, Wan Chang-Xing, Zhang Ping.A unified model for 1/f noise in n-channel and p-channel MOSFETs. Acta Physica Sinica, 2005, 54(5): 2118-2122.doi:10.7498/aps.54.2118 |