[1] |
Zhang Leng, Shen Yu-Hao, Tang Chao-Yang, Wu Kong-Ping, Zhang Peng-Zhan, Liu Fei, Hou Ji-Wei.Effect of uniaxial strain on Hole mobility of Sb2Se3. Acta Physica Sinica, 2024, 73(11): 117101.doi:10.7498/aps.73.20240175 |
[2] |
Ji Ting-Wei, Bai Gang.Effect of biaxial misfit strain on properties of ferroelectric double gate negative capacitance transistors. Acta Physica Sinica, 2023, 72(6): 067701.doi:10.7498/aps.72.20222190 |
[3] |
Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei.Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2021, 70(21): 217301.doi:10.7498/aps.70.20210700 |
[4] |
Liu Nai-Zhang, Zhang Xue-Bing, Yao Ruo-He.The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances. Acta Physica Sinica, 2020, 69(7): 077302.doi:10.7498/aps.69.20191931 |
[5] |
Guo Ning, Zhou Zhou, Ni Jian, Cai Hong-Kun, Zhang Jian-Jun, Sun Yan-Yan, Li Juan.Thin film transistor based on two-dimensional organic-inorganic hybrid perovskite. Acta Physica Sinica, 2020, 69(19): 198102.doi:10.7498/aps.69.20200701 |
[6] |
Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong.Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement. Acta Physica Sinica, 2018, 67(17): 178501.doi:10.7498/aps.67.20180474 |
[7] |
An Xia, Huang Ru, Li Zhi-Qiang, Yun Quan-Xin, Lin Meng, Guo Yue, Liu Peng-Qiang, Li Ming, Zhang Xing.Research progress of high mobility germanium based metal oxide semiconductor devices. Acta Physica Sinica, 2015, 64(20): 208501.doi:10.7498/aps.64.208501 |
[8] |
Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin.Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica, 2015, 64(3): 038501.doi:10.7498/aps.64.038501 |
[9] |
Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu.A model of capacitance characteristic for uniaxially strained Si N-metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2015, 64(6): 067305.doi:10.7498/aps.64.067305 |
[10] |
Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen.Study on gate capacitance-voltage characteristics of strained-SiGe pMOSFET. Acta Physica Sinica, 2013, 62(12): 127102.doi:10.7498/aps.62.127102 |
[11] |
Chang Hu-Dong, Sun Bing, Lu Li, Zhao Wei, Wang Sheng-Kai, Wang Wen-Xin, Liu Hong-Gang.Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFET. Acta Physica Sinica, 2012, 61(21): 217304.doi:10.7498/aps.61.217304 |
[12] |
Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke.The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors. Acta Physica Sinica, 2011, 60(4): 047101.doi:10.7498/aps.60.047101 |
[13] |
Wang Xiao-Yan, Zhang He-Ming, Song Jian-Jun, Ma Jian-Li, Wang Guan-Yu, An Jiu-Hua.Electron mobility of strained Si/(001)Si1- x Ge x. Acta Physica Sinica, 2011, 60(7): 077205.doi:10.7498/aps.60.077205 |
[14] |
Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo.Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric. Acta Physica Sinica, 2010, 59(11): 8131-8136.doi:10.7498/aps.59.8131 |
[15] |
Niu Lian-Bin, Guan Yun-Xia.Fullerene-doped hole transport NPB layer in organic light-emitting devices. Acta Physica Sinica, 2009, 58(7): 4931-4935.doi:10.7498/aps.58.4931 |
[16] |
Yin Li-Qin, Peng Jun-Biao.Hole transport in polymer P3HT with different annealing temperatures. Acta Physica Sinica, 2009, 58(5): 3456-3460.doi:10.7498/aps.58.3456 |
[17] |
Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min.Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica, 2007, 56(7): 4117-4121.doi:10.7498/aps.56.4117 |
[18] |
Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan.An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica, 2006, 55(11): 6090-6094.doi:10.7498/aps.55.6090 |
[19] |
Li Ze-Hong, Li Zhao-Ji, Zhang Bo, Fan Jian.Mobility model of nonuniform channel MOS by radiation induced positive spatial charge. Acta Physica Sinica, 2004, 53(2): 561-565.doi:10.7498/aps.53.561 |
[20] |
Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia.Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica, 2003, 52(4): 830-833.doi:10.7498/aps.52.830 |