[1] |
Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng.Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays. Acta Physica Sinica, 2021, 70(11): 116102.doi:10.7498/aps.70.20202028 |
[2] |
Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong.Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement. Acta Physica Sinica, 2018, 67(17): 178501.doi:10.7498/aps.67.20180474 |
[3] |
Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei.Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402.doi:10.7498/aps.65.038402 |
[4] |
Zhu Le-Yong, Gao Ya-Na, Zhang Jian-Hua, Li Xi-Feng.High mobility thin-film transistor with solution-processed hafnium-oxide dielectric and zinc-indium-tin-oxide semiconductor. Acta Physica Sinica, 2015, 64(16): 168501.doi:10.7498/aps.64.168501 |
[5] |
Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang.Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2014, 63(23): 237304.doi:10.7498/aps.63.237304 |
[6] |
Yu Chen-Hui, Luo Xiang-Dong, Zhou Wen-Zheng, Luo Qing-Zhou, Liu Pei-Sheng.Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs. Acta Physica Sinica, 2012, 61(20): 207301.doi:10.7498/aps.61.207301 |
[7] |
Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue.A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2012, 61(4): 047301.doi:10.7498/aps.61.047301 |
[8] |
Shi Wei-Wei, Li-Wen, Yi Ming-Dong, Xie Ling-Hai, Wei-Wei, Huang Wei.Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modification. Acta Physica Sinica, 2012, 61(22): 228502.doi:10.7498/aps.61.228502 |
[9] |
Wang Xiong, Cai Xi-Kun, Yuan Zi-Jian, Zhu Xia-Ming, Qiu Dong-Jiang, Wu Hui-Zhen.Study of zinc tin oxide thin-film transistor. Acta Physica Sinica, 2011, 60(3): 037305.doi:10.7498/aps.60.037305 |
[10] |
, Zhao Su-Ling, Xu Zheng, Yao Jiang-Feng, Zhang Fu-Jun, Tian Xue-Yan.Non-solvent addition induced self-organization for enhancement of performance of poly(3-hexylthiophene) organic field-effect transistors. Acta Physica Sinica, 2011, 60(3): 037201.doi:10.7498/aps.60.037201 |
[11] |
Xu Tian-Ning, Wu Hui-Zhen, Zhang Ying-Ying, Wang Xiong, Zhu Xia-Ming, Yuan Zi-Jian.Fabrication and performance of indium oxide based transparent thin film transistors. Acta Physica Sinica, 2010, 59(7): 5018-5022.doi:10.7498/aps.59.5018 |
[12] |
Sun Qin-Jun, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Gao Li-Yan, Tian Xue-Yan, Wang Yong-Sheng.Contact effect in organic thin film transistors. Acta Physica Sinica, 2010, 59(11): 8125-8130.doi:10.7498/aps.59.8125 |
[13] |
Chen Yue-Ning, Xu Zheng, Zhao Su-Ling, Sun Qin-Jun, Yin Fei-Fei, Dong Yu-Hang.Research on least-squares fitting calculation of the field-effect mobility. Acta Physica Sinica, 2010, 59(11): 8113-8117.doi:10.7498/aps.59.8113 |
[14] |
Yuan Guang-Cai, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Xu Na, Sun Qin-Jun, Xu Xu-Rong.Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage. Acta Physica Sinica, 2009, 58(7): 4941-4947.doi:10.7498/aps.58.4941 |
[15] |
Liu Yu-Rong, Wang Zhi-Xin, Yu Jia-Le, Xu Hai-Hong.High mobility polymer thin-film transistors. Acta Physica Sinica, 2009, 58(12): 8566-8570.doi:10.7498/aps.58.8566 |
[16] |
Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong, Wang Jin.The impact of high-k dielectrics on the performance of Schottky barrier source/drain (SBSD) ultra-thin body (UTB) SOI MOSFET. Acta Physica Sinica, 2008, 57(7): 4476-4481.doi:10.7498/aps.57.4476 |
[17] |
Sa Ning, Kang Jin-Feng, Yang Hong, Liu Xiao-Yan, Zhang Xing, Han Ru-Qi.Negative bias temperature instability of HfN/HfO2 gated p-MOSFETs. Acta Physica Sinica, 2006, 55(3): 1419-1423.doi:10.7498/aps.55.1419 |
[18] |
Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng.2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects. Acta Physica Sinica, 2006, 55(7): 3670-3676.doi:10.7498/aps.55.3670 |
[19] |
Guo De-Feng, Geng Wei-Gang, Lan Wei, Huang Chun-Ming, Wang Yin-Yue.Fabrication and properties of the Y-doped Al2O3 high-k gate dielectric films. Acta Physica Sinica, 2005, 54(12): 5901-5906.doi:10.7498/aps.54.5901 |
[20] |
Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia.Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica, 2003, 52(4): 830-833.doi:10.7498/aps.52.830 |