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Lü Ling, Xing Mu-Han, Xue Bo-Rui, Cao Yan-Rong, Hu Pei-Pei, Zheng Xue-Feng, Ma Xiao-Hua, Hao Yue.Effect of heavy ion radiation on low frequency noise characteristics of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2024, 73(3): 036103.doi:10.7498/aps.73.20221360 |
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Liu Qing-Bin, Yu Cui, Guo Jian-Chao, Ma Meng-Yu, He Ze-Zhao, Zhou Chuang-Jie, Gao Xue-Dong, Yu Hao, Feng Zhi-Hong.Influence of polycrystalline diamond on silicon-based GaN material. Acta Physica Sinica, 2023, 72(9): 098104.doi:10.7498/aps.72.20221942 |
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Lei Zhen-Shuai, Sun Xiao-Wei, Liu Zi-Jiang, Song Ting, Tian Jun-Hong.Phase diagram prediction and high pressure melting characteristics of GaN. Acta Physica Sinica, 2022, 71(19): 198102.doi:10.7498/aps.71.20220510 |
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Wang Shun-Li, Wang Ya-Chao, Guo Dao-You, Li Chao-Rong, Liu Ai-Ping.NiO/GaN p-n junction ultraviolet photodetector and self-powered technology. Acta Physica Sinica, 2021, 70(12): 128502.doi:10.7498/aps.70.20210154 |
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Xie Fei, Zang Hang, Liu Fang, He Huan, Liao Wen-Long, Huang Yu.Simulated research on displacement damage of gallium nitride radiated by different neutron sources. Acta Physica Sinica, 2020, 69(19): 192401.doi:10.7498/aps.69.20200064 |
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Zhang Zhi-Rong, Fang Yu-Long, Yin Jia-Yun, Guo Yan-Min, Wang Bo, Wang Yuan-Gang, Li Jia, Lu Wei-Li, Gao Nan, Liu Pei, Feng Zhi-Hong.Highmobility AlGaN/GaN high electronic mobility transistors on GaN homo-substrates. Acta Physica Sinica, 2018, 67(7): 076801.doi:10.7498/aps.67.20172581 |
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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang.Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica, 2017, 66(15): 158501.doi:10.7498/aps.66.158501 |
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi.Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801.doi:10.7498/aps.64.107801 |
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Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate. Acta Physica Sinica, 2015, 64(17): 177804.doi:10.7498/aps.64.177804 |
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Liu Mu-Lin, Min Qiu-Ying, Ye Zhi-Qing.Efficiency droop in blue InGaN/GaN light emitting diodes on Si substrate. Acta Physica Sinica, 2012, 61(17): 178503.doi:10.7498/aps.61.178503 |
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Wang Xiao-Yong, Chong Ming, Zhao De-Gang, Su Yan-Mei.Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact. Acta Physica Sinica, 2012, 61(21): 217302.doi:10.7498/aps.61.217302 |
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Yan Qi-Rong, Zhang Yong, Yan Qi-Ang, Shi Pei-Pei, Zheng Shu-Wen, Niu Qiao-Li, Li Shu-Ti, Fan Guang-Han.Effect of an asymmetry n-AlGaN layer on performance of dual-blue wavelength light-emitting diodes. Acta Physica Sinica, 2012, 61(3): 036103.doi:10.7498/aps.61.036103 |
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Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi.Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica, 2011, 60(7): 078503.doi:10.7498/aps.60.078503 |
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Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie.A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica, 2011, 60(9): 098107.doi:10.7498/aps.60.098107 |
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Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di.Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica, 2010, 59(2): 1233-1236.doi:10.7498/aps.59.1233 |
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Jiang Yang, Luo Yi, Wang Lai, Li Hong-Tao, Xi Guang-Yi, Zhao Wei, Han Yan-Jun.Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structures. Acta Physica Sinica, 2009, 58(5): 3468-3473.doi:10.7498/aps.58.3468 |
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Zhou Mei, Zhao De-Gang.Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574.doi:10.7498/aps.57.4570 |
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Zou Ji-Jun, Chang Ben-Kang, Yang Zhi.Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes. Acta Physica Sinica, 2007, 56(5): 2992-2997.doi:10.7498/aps.56.2992 |
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Li Tong, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Xing Yan-Hui, Han Jun, Liu Ying, Gao Guo, Shen Guang-Di.Studies on electrical properties of delta-doping p-GaN films. Acta Physica Sinica, 2007, 56(2): 1036-1040.doi:10.7498/aps.56.1036 |
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
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