[1] |
Fang Yu, Wu Xing-Zhi, Chen Yong-Qiang, Yang Jun-Yi, Song Ying-Lin.Study on two-photon induced ultrafast carrier dynamcis in Ge-doped GaN by transient absorption spectroscopy. Acta Physica Sinica, 2020, 69(16): 168701.doi:10.7498/aps.69.20200397 |
[2] |
Zhou Nan, Zheng Qiang, Hu Bei-Chen, Shi De-Quan, Miao Chun-Yu, Ma Chun-Yu, Liang Hong-Wei, Hao Sheng-Zhi, Zhang Qing-Yu.Effects of controlled surface states on the photoluminescence emission of GaN film. Acta Physica Sinica, 2014, 63(13): 137802.doi:10.7498/aps.63.137802 |
[3] |
Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui.Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica, 2013, 62(11): 117103.doi:10.7498/aps.62.117103 |
[4] |
Zhang Pan-Jun, Sun Hui-Qing, Guo Zhi-You, Wang Du-Yang, Xie Xiao-Yu, Cai Jin-Xin, Zheng Huan, Xie Nan, Yang Bin.The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells. Acta Physica Sinica, 2013, 62(11): 117304.doi:10.7498/aps.62.117304 |
[5] |
Wang Yan-Wen, Wu Hua-Rui.Exciton states and optical properties in zinc-blende GaN/AlGaN quantum dot. Acta Physica Sinica, 2012, 61(10): 106102.doi:10.7498/aps.61.106102 |
[6] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan.Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica, 2011, 60(12): 127901.doi:10.7498/aps.60.127901 |
[7] |
Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen.Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica, 2011, 60(2): 028503.doi:10.7498/aps.60.028503 |
[8] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Wang Xiao-Hui, Xu Yuan.Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica, 2011, 60(10): 107901.doi:10.7498/aps.60.107901 |
[9] |
Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun.Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica, 2010, 59(2): 1258-1262.doi:10.7498/aps.59.1258 |
[10] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Du Xiao-Qing, Zhang Yi-Jun, Gao Pin, Wang Xiao-Hui, Guo Xiang-Yang, Niu Jun, Gao You-Tang.Study of spectral response characteristics of negative electron affinity GaN photocathode. Acta Physica Sinica, 2010, 59(5): 3577-3582.doi:10.7498/aps.59.3577 |
[11] |
Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu.Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector. Acta Physica Sinica, 2010, 59(12): 8903-8909.doi:10.7498/aps.59.8903 |
[12] |
Zhou Mei, Zhao De-Gang.Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574.doi:10.7498/aps.57.4570 |
[13] |
Guo Liang-Liang, Feng Qian, Ma Xiang-Bai, Hao Yue, Liu Jie.Relation between breakdown voltage and current collapse in GaN FP-HEMTs. Acta Physica Sinica, 2007, 56(5): 2900-2904.doi:10.7498/aps.56.2900 |
[14] |
Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong.Study on optical properties of Er/Er+O doped GaN thin films. Acta Physica Sinica, 2007, 56(3): 1621-1626.doi:10.7498/aps.56.1621 |
[15] |
Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De.Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica, 2006, 55(5): 2476-2481.doi:10.7498/aps.55.2476 |
[16] |
Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong.Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica, 2006, 55(3): 1407-1412.doi:10.7498/aps.55.1407 |
[17] |
Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua.A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica, 2005, 54(9): 4273-4278.doi:10.7498/aps.54.4273 |
[18] |
Qin Qi, Yu Nai-Sen, Guo Li-Wei, Wang Yang, Zhu Xue-Liang, Chen Hong, Zhou Jun-Ming.Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition. Acta Physica Sinica, 2005, 54(11): 5450-5454.doi:10.7498/aps.54.5450 |
[19] |
Zhang Jin-Cheng, Hao Yue, Li Pei-Xian, Fan Long, Feng Qian.Thickness measurement of GaN film based on transmission spectra. Acta Physica Sinica, 2004, 53(4): 1243-1246.doi:10.7498/aps.53.1243 |
[20] |
Shao Jun.Spectroscopic derivative in optical study of GaInAs/InP and GaInP/AlGaInP multip le quantum wells. Acta Physica Sinica, 2003, 52(10): 2534-2540.doi:10.7498/aps.52.2534 |