[1] |
Liu Qing-Bin, Yu Cui, Guo Jian-Chao, Ma Meng-Yu, He Ze-Zhao, Zhou Chuang-Jie, Gao Xue-Dong, Yu Hao, Feng Zhi-Hong.Influence of polycrystalline diamond on silicon-based GaN material. Acta Physica Sinica, 2023, 72(9): 098104.doi:10.7498/aps.72.20221942 |
[2] |
Lei Zhen-Shuai, Sun Xiao-Wei, Liu Zi-Jiang, Song Ting, Tian Jun-Hong.Phase diagram prediction and high pressure melting characteristics of GaN. Acta Physica Sinica, 2022, 71(19): 198102.doi:10.7498/aps.71.20220510 |
[3] |
Yuan Ying-Kuo, Guo Wei-Ling, Du Zai-Fa, Qian Feng-Song, Liu Ming, Wang Le, Xu Chen, Yan Qun, Sun Jie.Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode. Acta Physica Sinica, 2021, 70(19): 197801.doi:10.7498/aps.70.20210122 |
[4] |
Xie Fei, Zang Hang, Liu Fang, He Huan, Liao Wen-Long, Huang Yu.Simulated research on displacement damage of gallium nitride radiated by different neutron sources. Acta Physica Sinica, 2020, 69(19): 192401.doi:10.7498/aps.69.20200064 |
[5] |
Wang Bo, Fang Yu-Long, Yin Jia-Yun, Liu Qing-Bin, Zhang Zhi-Rong, Guo Yan-Min, Li Jia, Lu Wei-Li, Feng Zhi-Hong.Effect of surface pretreatment on GaN van der Waals epitaxy growth on graphene. Acta Physica Sinica, 2017, 66(24): 248101.doi:10.7498/aps.66.248101 |
[6] |
Wang Guang-Xu, Chen Peng, Liu Jun-Lin, Wu Xiao-Ming, Mo Chun-Lan, Quan Zhi-Jue, Jiang Feng-Yi.Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate. Acta Physica Sinica, 2016, 65(8): 088501.doi:10.7498/aps.65.088501 |
[7] |
Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate. Acta Physica Sinica, 2015, 64(17): 177804.doi:10.7498/aps.64.177804 |
[8] |
Feng Jia-Heng, Tang Li-Dan, Liu Bang-Wu, Xia Yang, Wang Bing.Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition. Acta Physica Sinica, 2013, 62(11): 117302.doi:10.7498/aps.62.117302 |
[9] |
Zhang Li-Li, Liu Zhan-Hui, Xiu Xiang-Qian, Zhang Rong, Xie Zi-Li.Optimization of the parameters for growth high-qulity GaN film by hydride vapor phase epitaxy. Acta Physica Sinica, 2013, 62(20): 208101.doi:10.7498/aps.62.208101 |
[10] |
Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie.A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica, 2011, 60(9): 098107.doi:10.7498/aps.60.098107 |
[11] |
Mao Qing-Hua, Jiang Feng-Yi, Cheng Hai-Ying, Zheng Chang-Da.p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substrates. Acta Physica Sinica, 2010, 59(11): 8078-8082.doi:10.7498/aps.59.8078 |
[12] |
Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao.Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193.doi:10.7498/aps.58.7189 |
[13] |
Lü Hui-Min, Shi Zhen-Hai, Chen Guang-De.Synthesis of pure hexagonal phase aluminium nitride foam. Acta Physica Sinica, 2009, 58(9): 6403-6407.doi:10.7498/aps.58.6403 |
[14] |
Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling.Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2008, 57(1): 472-476.doi:10.7498/aps.57.472 |
[15] |
Liu Jie, Hao Yue, Feng Qian, Wang Chong, Zhang Jin-Cheng, Guo Liang-Liang.Characterization of Ni/Au GaN Schottky contact base on I-V-T and C-V-T measurements. Acta Physica Sinica, 2007, 56(6): 3483-3487.doi:10.7498/aps.56.3483 |
[16] |
Li Tong, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Xing Yan-Hui, Han Jun, Liu Ying, Gao Guo, Shen Guang-Di.Studies on electrical properties of delta-doping p-GaN films. Acta Physica Sinica, 2007, 56(2): 1036-1040.doi:10.7498/aps.56.1036 |
[17] |
Guo Bao-Zeng, Gong Na, Shi Jian-Ying, Wang Zhi-Yu.Monte Carlo simulation of the hole transport properties for wurtzite GaN. Acta Physica Sinica, 2006, 55(5): 2470-2475.doi:10.7498/aps.55.2470 |
[18] |
Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
[19] |
Li Yong-Hua, Xu Peng-Shou, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun.First-principle study on GaN(1010) surface structure. Acta Physica Sinica, 2005, 54(1): 317-322.doi:10.7498/aps.54.317 |
[20] |
Fang Kun, Gao Shan-Min, Qiu Hai-Lin, Cao Chuan-Bao, Zhu He-Sun.Synthesis of β-GaN nanocrystals with a cubic structure by gas-phase chemical reaction. Acta Physica Sinica, 2005, 54(5): 2267-2271.doi:10.7498/aps.54.2267 |