[1] |
Meng Shao-Yi, Hao Qi, Lyu Guo-Jian, Qiao Ji-Chao.The β relaxation process of La-based amorphous alloy: Effect of annealing and strain amplitude. Acta Physica Sinica, 2023, 72(7): 076101.doi:10.7498/aps.72.20222389 |
[2] |
Zhang Jin-Shuai, Huang Qiu-Shi, Jiang Li, Qi Run-Ze, Yang Yang, Wang Feng-Li, Zhang Zhong, Wang Zhan-Shan.Stress and structure properties of X-ray W/Si multilayer under low temperature annealing. Acta Physica Sinica, 2016, 65(8): 086101.doi:10.7498/aps.65.086101 |
[3] |
Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua.Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica, 2015, 64(19): 198801.doi:10.7498/aps.64.198801 |
[4] |
Guo Shao-Qiang, Hou Qing-Yu, Zhao Chun-Wang, Mao Fei.First principles study of the effect of high V doping on the optical band gap and absorption spectrum of ZnO. Acta Physica Sinica, 2014, 63(10): 107101.doi:10.7498/aps.63.107101 |
[5] |
Xu Da-Qing, Zhang Yi-Men, Lou Yong-Le, Tong Jun.Influences of post-heat treatment on microstructures, optical and magnetic properties of unintentionally doped GaN epilayers implanted with Mn ions. Acta Physica Sinica, 2014, 63(4): 047501.doi:10.7498/aps.63.047501 |
[6] |
Luo Xiao-Dong, Di Guo-Qing.Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputtering. Acta Physica Sinica, 2012, 61(20): 206803.doi:10.7498/aps.61.206803 |
[7] |
Song Chao, Chen Gu-Ran, Xu Jun, Wang Tao, Sun Hong-Cheng, Liu Yu, Li Wei, Chen Kun-Ji.Properties of electric transport in crystallized silicon films under different annealing temperatures. Acta Physica Sinica, 2009, 58(11): 7878-7883.doi:10.7498/aps.58.7878 |
[8] |
Jia Lu, Xie Er-Qing, Pan Xiao-Jun, Zhang Zhen-Xing.Optical properties of amorphous GaN films deposited by sputtering. Acta Physica Sinica, 2009, 58(5): 3377-3382.doi:10.7498/aps.58.3377 |
[9] |
Deng Jin-Xiang, Wang Xu-Yang, Yao Qian, Zhou Tao, Zhang Xiao-Kang.Optical band gap of cubic boron nitride thin films deposited by sputtering. Acta Physica Sinica, 2008, 57(10): 6631-6635.doi:10.7498/aps.57.6631 |
[10] |
Pan Xiao-Jun, Zhang Zhen-Xing, Wang Tao, Li Hui, Xie Er-Qing.Room temperature visible photoluminescence from nanocrystalline GaN∶Er film prepared by sputtering. Acta Physica Sinica, 2008, 57(6): 3786-3790.doi:10.7498/aps.57.3786 |
[11] |
Xu Ying, Diao Hong-Wei, Zhang Shi-Bin, Li Xu-Dong, Zeng Xiang-Bo, Wang Wen-Jing, Liao Xian-Bo.Deposition of p-type nc-SiC:H thin films with subtle carbon incorporation for applications in p-i-n solar cells. Acta Physica Sinica, 2007, 56(5): 2915-2919.doi:10.7498/aps.56.2915 |
[12] |
Li Rong-Bin, Yu Zhong-Hai.Computer simulation of damage in diamond due to boron-nitrogen co-doping and its annealing. Acta Physica Sinica, 2007, 56(6): 3360-3365.doi:10.7498/aps.56.3360 |
[13] |
Liang Li-Ping, Zhang Lei, Sheng Yong-Gang, Xu Yao, Wu Dong, Sun Yu-Han, Jiang Xiao-Dong, Wei Xiao-Feng.Studies on the laser-induced damage resistance of sol-gel derived ZrO2-TiO2 composite high refractive index films. Acta Physica Sinica, 2007, 56(6): 3596-3601.doi:10.7498/aps.56.3596 |
[14] |
Xiao Jian-Rong, Xu Hui, Guo Ai-Min, Wang Huan-You.Study on FN-DLC thin films: (Ⅱ) effect of radio frequency power on the optical band gap of the thin films. Acta Physica Sinica, 2007, 56(3): 1809-1814.doi:10.7498/aps.56.1809 |
[15] |
Xiao Jian-Rong, Xu Hui, Li Yan-Feng, Li Ming-Jun.Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films. Acta Physica Sinica, 2007, 56(7): 4169-4174.doi:10.7498/aps.56.4169 |
[16] |
Zhang Xi-Jian, Ma Hong-Lei, Wang Qing-Pu, Ma Jin, Zong Fu-Jian, Xiao Hong-Di, Ji Feng.Effect of annealing on optical properties of MgxZn1-xO thin films deposited at low temperature. Acta Physica Sinica, 2006, 55(1): 437-440.doi:10.7498/aps.55.437 |
[17] |
Shang Shu-Zhen, Shao Jian-Da, Shen Jian, Yi Kui, Fan Zheng-Xiu.Effects of annealing on electron-beam evaporated 193nm Al2O3/MgF2 HR mirrors. Acta Physica Sinica, 2006, 55(5): 2639-2643.doi:10.7498/aps.55.2639 |
[18] |
Yang Shen-Dong, Ning Zhao-Yuan, Huang Feng, Cheng Shan-Hua, Ye Chao.. Acta Physica Sinica, 2002, 51(6): 1321-1325.doi:10.7498/aps.51.1321 |
[19] |
.. Acta Physica Sinica, 2002, 51(2): 439-443.doi:10.7498/aps.51.439 |
[20] |
Ye Chao, Ning Zhao-Yuan, Cheng Shan-Hua, Wang Xiang-Ying.. Acta Physica Sinica, 2002, 51(11): 2640-2643.doi:10.7498/aps.51.2640 |