[1] |
Bai Wen-Qing, Yang Jiang-Tao, Yang Cui-Hong, Chen Yun-Yun.Interband optical conductivity in electromagnetic field modulated strained black phosphorene. Acta Physica Sinica, 2024, 73(13): 137803.doi:10.7498/aps.73.20240445 |
[2] |
Shi Yan, Zhang Tian-Hui.Control of self-organization: From equilibrium to non-equilibrium. Acta Physica Sinica, 2020, 69(14): 140503.doi:10.7498/aps.69.20200161 |
[3] |
Zhang Qiang-Qiang, Hu Jian-Yong, Jing Ming-Yong, Li Bin, Qin Cheng-Bing, Li Yao, Xiao Lian-Tuan, Jia Suo-Tang.Research on fluorescence lifetime dynamics of quantum dot by single photons modulation spectrum. Acta Physica Sinica, 2019, 68(1): 017803.doi:10.7498/aps.68.20181797 |
[4] |
Qiao Zhi-Xing, Qin Cheng-Bing, He Wen-Jun, Gong Ya-Ni, Xiao Lian-Tuan, Zhang Guo-Feng, Chen Rui-Yun, Gao Yan, Jia Suo-Tang.Lifetime modulation of graphene oxide film by laser direct writing for the fabrication of micropatterns. Acta Physica Sinica, 2018, 67(6): 066802.doi:10.7498/aps.67.20172331 |
[5] |
Wang Qian, Liu Wei-Guo, Gong Lei, Wang Li-Guo, Li Ya-Qing.Determination of carrier bulk lifetime and surface recombination velocity in semiconductor from double-wavelength free carrier absorption. Acta Physica Sinica, 2018, 67(21): 217201.doi:10.7498/aps.67.20181509 |
[6] |
Zhang Xi-Ren, Gao Chun-Ming.Time domain theory of the electronic transport property of semiconductors measured by means of square-wave-modulated free carrier absorption technique. Acta Physica Sinica, 2014, 63(13): 137801.doi:10.7498/aps.63.137801 |
[7] |
Sun Wei-Feng, Li Mei-Cheng, Zhao Lian-Cheng.First-principles investigation of carrier Auger lifetime and impact ionization rate in narrow-gap superlattices. Acta Physica Sinica, 2010, 59(8): 5661-5666.doi:10.7498/aps.59.5661 |
[8] |
Zhu Yi-Ming, Kaz Hirakawa, Chen Lin, He Bo-Yong, Huang Yuan-Shen, Jia Xiao-Xuan, Zhang Da-Wei, Zhuang Song-Lin.Terahertz power dissipation spectra of electrons in bulk GaAs under high electric fields at low temperature. Acta Physica Sinica, 2009, 58(4): 2692-2696.doi:10.7498/aps.58.2692 |
[9] |
Zhang Qing-Bin, Hong Wei-Yi, Lan Peng-Fei, Yang Zhen-Yu, Lu Pei-Xiang.Control of attosecond pulse generation with modulated polarization gating. Acta Physica Sinica, 2008, 57(12): 7848-7854.doi:10.7498/aps.57.7848 |
[10] |
Zhang Xi-Ren, Li Bin-Cheng, Liu Xian-Ming.Measurement of electronic transport property of semiconductors by three-dimensional modulated free carrier absorption technique. Acta Physica Sinica, 2008, 57(11): 7310-7316.doi:10.7498/aps.57.7310 |
[11] |
Shu Qiang, Shu Yong-Chun, Zhang Guan-Jie, Liu Ru-Bin, Yao Jiang-Hong, Pi Biao, Xing Xiao-Dong, Lin Yao-Wang, Xu Jing-Jun, Wang Zhan-Guo.Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure. Acta Physica Sinica, 2006, 55(3): 1379-1383.doi:10.7498/aps.55.1379 |
[12] |
Xing Xiu-San.Nonequilibrium statistical information theory. Acta Physica Sinica, 2004, 53(9): 2852-2863.doi:10.7498/aps.53.2852 |
[13] |
LI YAN-FEI.SUPERCONDUCTING FLUCTUATION AND PARACONDUCTIV-ITY IN AMORPHOUS ZrCo ALLOYS. Acta Physica Sinica, 1990, 39(6): 151-156.doi:10.7498/aps.39.151 |
[14] |
LI YU-ZHANG, XU ZHONG-YING, GE WEI-KUN, XU JI-SONG, ZHENG BAO-ZHEN, ZHUANG WEI-HUA.NONEQUILIBRIUM PHONON EFFECTS IN HOT CARRIER RELAXATION PROCESSES OF MULTIPLE QUANTUM WELL STRUCTURES. Acta Physica Sinica, 1989, 38(9): 1540-1544.doi:10.7498/aps.38.1540 |
[15] |
XIONG SHI-JIE.RELAXATION PROCESSES OF CARRIERS IN AMORPHOUS SEMICONDUCTOR SUPERLATTICES WITH MODULATEDLY DISTRIBUTED RECOMBINATION CENTERS. Acta Physica Sinica, 1986, 35(12): 1624-1633.doi:10.7498/aps.35.1624 |
[16] |
YUI SHOU-DUNG, WOO DAU-WEI, TON FU-DI, TAM HOA-YEN.MINORITY CARRIER LIFETIME IN SILICON CARBIDE BY THE ELECTROLUMINESCENCE METHOD. Acta Physica Sinica, 1966, 22(9): 976-981.doi:10.7498/aps.22.976 |
[17] |
WANG CHI-MING.THE PHASE-SHIFT LIFETIME OF EXCESS CARRIERS IN SEMICONDUCTORS UNDER SINUSOIDAL INJECTION. Acta Physica Sinica, 1966, 22(3): 318-324.doi:10.7498/aps.22.318 |
[18] |
HUNG GIAN.THE MEASUREMENT OF EXCESS CARRIERS LIFE-TIME IN SEMICONDUCTORS BY PHOTOCONDUCTIVE PHASESHIFT OF SPREADING RESISTANCE UNDER A POINT CONTACT. Acta Physica Sinica, 1966, 22(4): 385-403.doi:10.7498/aps.22.385 |
[19] |
ZHUANG WEI-HWA, PAN GUI-SHENG.MEASUREMENT OF MINORITY CARRIER LIFETIME IN Ge AND Si BY THE SPREADING-RESISTANCEPHOTO-DECAY METHOD. Acta Physica Sinica, 1963, 19(3): 191-201.doi:10.7498/aps.19.191 |
[20] |
WANG SHOU-WU.THE MEASUREMENT OF THE LIFE TIME OF MINORITY CURRENT CARRIERS IN SEMICONDUCTORS BY OBSERVING THE PHOTO-CONDUCTIVE DECAY OF THE SPREADING RESISTANCE UNDER A POINT CONTACT. Acta Physica Sinica, 1963, 19(3): 176-190.doi:10.7498/aps.19.176 |