| [1] |
Li Jing-Hui, Cao Sheng-Guo, Han Jia-Ning, Li Zhan-Hai, Zhang Zhen-Hua.Electrical contact properties of 2D metal-semiconductor heterojunctions composed of different phases of NbS2and GeS2. Acta Physica Sinica, 2024, 73(13): 137102.doi:10.7498/aps.73.20240530 |
| [2] |
Huang Min, Li Zhan-Hai, Cheng Fang.Tunable electronic structures and interface contact in graphene/C3N van der Waals heterostructures. Acta Physica Sinica, 2023, 72(14): 147302.doi:10.7498/aps.72.20230318 |
| [3] |
Huang Ling-Qin, Zhu Jing, Ma Yue, Liang Ting, Lei Cheng, Li Yong-Wei, Gu Xiao-Gang.Research status and progress of metal contacts of SiC power devices. Acta Physica Sinica, 2021, 70(20): 207302.doi:10.7498/aps.70.20210675 |
| [4] |
Guo Li-Juan, Hu Ji-Song, Ma Xin-Guo, Xiang Ju.Interfacial interaction and Schottky contact of two-dimensional WS2/graphene heterostructure. Acta Physica Sinica, 2019, 68(9): 097101.doi:10.7498/aps.68.20190020 |
| [5] |
Wan Ya-Zhou, Gao Ming, Li Yong, Guo Hai-Bo, Li Yong-Hua, Xu Fei, Ma Zhong-Quan.First principle study of ternary combined-state and electronic structure in amorphous silica. Acta Physica Sinica, 2017, 66(18): 188802.doi:10.7498/aps.66.188802 |
| [6] |
Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi.Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica, 2013, 62(20): 207303.doi:10.7498/aps.62.207303 |
| [7] |
Jiang Zhong-Wei, Wang Wen-Xin, Gao Han-Chao, Li Hui, He Tao, Yang Cheng-Liang, Chen Hong, Zhou Jun-Ming.Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots. Acta Physica Sinica, 2009, 58(1): 471-476.doi:10.7498/aps.58.471 |
| [8] |
Ji Zi-Wu, Mino Hirofumi, Oto Kenichi, Muro Kiyofumi, Akimoto Ryoichi, Takeyama Shojiro.Magnetic field effect of charged excitons in n-doped ZnSe/BeTe type-Ⅱ quantum wells. Acta Physica Sinica, 2008, 57(10): 6609-6613.doi:10.7498/aps.57.6609 |
| [9] |
Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue.Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica, 2008, 57(7): 4487-4491.doi:10.7498/aps.57.4487 |
| [10] |
Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Huang Zhi-Ming, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Guo Shao-Ling, Chu Jun-Hao.Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands. Acta Physica Sinica, 2008, 57(4): 2481-2485.doi:10.7498/aps.57.2481 |
| [11] |
Gao Hong-Ling, Li Dong-Lin, Zhou Wen-Zheng, Shang Li-Yan, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping.Subband electron properties of InGaAs/InAlAs high-electron-mobility transistors with different channel chickness. Acta Physica Sinica, 2007, 56(8): 4955-4959.doi:10.7498/aps.56.4955 |
| [12] |
Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Cui Li-Jie, Li Dong-Lin, Gao Hong-Ling, Zeng Yi-Ping, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao.Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems. Acta Physica Sinica, 2007, 56(7): 4099-4104.doi:10.7498/aps.56.4099 |
| [13] |
Tang Lin, Huang Jian-Hua, Duan Zheng-Lu, Zhang Wei-Ping, Zhou Zhao-Ying, Feng Yan-Ying, Zhu Rong.Quantum tunnelling time of cold atom passing through a laser beam. Acta Physica Sinica, 2006, 55(12): 6606-6611.doi:10.7498/aps.55.6606 |
| [14] |
Zhou Wen-Zheng, Yao Wei, Zhu Bo, Qiu Zhi-Jun, Guo Shao-Ling, Lin Tie, Cui Li-Jie, Gui Yong-Sheng, Chu Jun-Hao.Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAlAs/InGaAs single quantum well. Acta Physica Sinica, 2006, 55(4): 2044-2048.doi:10.7498/aps.55.2044 |
| [15] |
Guo Ru-Hai, Shi Hong-Yan, Sun Xiu-Dong.The calculation of strain distribution in quantum dots with Green method. Acta Physica Sinica, 2004, 53(10): 3487-3492.doi:10.7498/aps.53.3487 |
| [16] |
Zhao Ji-Gang, Shao Bin, Wang Tai-Hong.. Acta Physica Sinica, 2002, 51(6): 1355-1359.doi:10.7498/aps.51.1355 |
| [17] |
LI HONG-WEI, WANG TAI-HONG.THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE. Acta Physica Sinica, 2001, 50(12): 2501-2505.doi:10.7498/aps.50.2501 |
| [18] |
LI HONG-WEI, WANG TAI-HONG.CURRENT TRANSPORT PROPERTIES OF GaAs SCHOTTKY DIODE CONTAINING InAs SELF-ASSEMBLED QUANTUM DOTS. Acta Physica Sinica, 2001, 50(2): 262-267.doi:10.7498/aps.50.262 |
| [19] |
LI HONG-WEI, WANG TAI-HONG.CORRELATED DISCHARGING OF InAs QUANTUM DOTS IN METAL-SEMICONDUCTOR-METAL STRUCTURE. Acta Physica Sinica, 2001, 50(10): 2038-2043.doi:10.7498/aps.50.2038 |
| [20] |
NIE YI-HANG, SHI YUN-LONG, ZHANG YUN-BO, LIANG JIU-QING, PU FU-KE.MACROSCOPIC QUANTUM EFFECT IN SINGLE DOMAIN ANTIFERROMAGNETIC PARTICLES IN AN EXTERNAL MAGNETIC FIELD. Acta Physica Sinica, 2000, 49(8): 1580-1585.doi:10.7498/aps.49.1580 |
下载: