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Zhang Jie-Yin, Gao Fei, Zhang Jian-Jun.Research progress of silicon and germanium quantum computing materials. Acta Physica Sinica, 2021, 70(21): 217802.doi:10.7498/aps.70.20211492 |
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Guo Hui, Lu Hong-Liang, Huang Li, Wang Xue-Yan, Lin Xiao, Wang Ye-Liang, Du Shi-Xuan, Gao Hong-Jun.Intercalation and its mechanism of high quality large area graphene on metal substrate. Acta Physica Sinica, 2017, 66(21): 216803.doi:10.7498/aps.66.216803 |
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Zeng Xiang-An, Ai Bin, Deng You-Jun, Shen Hui.Study on light-induced degradation of silicon wafers and solar cells. Acta Physica Sinica, 2014, 63(2): 028803.doi:10.7498/aps.63.028803 |
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Zhou Nai-Gen, Hu Qiu-Fa, Xu Wen-Xiang, Li Ke, Zhou Lang.A comparative study of different potentials for molecular dynamics simulations of melting process of silicon. Acta Physica Sinica, 2013, 62(14): 146401.doi:10.7498/aps.62.146401 |
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Lan Hui-Qing, Xu Cang.Molecular dynamics simulation on friction process of silicon-doped diamond-like carbon films. Acta Physica Sinica, 2012, 61(13): 133101.doi:10.7498/aps.61.133101 |
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Li Bao-Jia, Zhou Ming, Zhang Wei.Femtosecond laser induced silicon surface cone microstructures by covering transparent films. Acta Physica Sinica, 2012, 61(23): 237901.doi:10.7498/aps.61.237901 |
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Yuan Chun-Hua, Li Xiao-Hong, Tang Duo-Chang, Yang Hong-Dao, Li Guo-Qiang.Evolution of silicon surface microstructure induced by Nd:YAG nanosecond laser. Acta Physica Sinica, 2010, 59(10): 7015-7019.doi:10.7498/aps.59.7015 |
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Gong Jia, Jiang Yi-Ming, Zhong Cheng, Deng Bo, Liu Ping, Li Jin.Revealing the transport mechanisms of silicon oxidation by H218O/H216O isotopic labeling. Acta Physica Sinica, 2009, 58(2): 1305-1309.doi:10.7498/aps.58.1305 |
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Liu Xing-Chong, Lu Zhi-Hai, Lu Zhong-Lin, Zhang Feng-Ming, Du You-Wei.Ferromagnetism in polycrystalline Si0.9654Mn0.0346:B thin films. Acta Physica Sinica, 2008, 57(11): 7262-7266.doi:10.7498/aps.57.7262 |
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Tang Xin-Xin, Luo Wen-Yun, Wang Chao-Zhuang, He Xin-Fu, Zha Yuan-Zi, Fan Sheng, Huang Xiao-Long, Wang Chuan-Shan.Non-ionizing energy loss of low energy proton in semiconductor materials Si and GaAs. Acta Physica Sinica, 2008, 57(2): 1266-1270.doi:10.7498/aps.57.1266 |
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Li Ai-Hua, Zhang Kai-Wang, Meng Li-Jun, Li Jun, Liu Wen-Liang, Zhong Jian-Xin.Novel silicon nanostructures based on graphene ribbons. Acta Physica Sinica, 2008, 57(7): 4356-4363.doi:10.7498/aps.57.4356 |
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Meng Li-Jun, Zhang Kai-Wang, Zhong Jian-Xin.Molecular dynamics simulation of formation of silicon nanoparticles on surfaces of carbon nanotubes. Acta Physica Sinica, 2007, 56(2): 1009-1013.doi:10.7498/aps.56.1009 |
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Liu Li-Feng, Lü Hui-Bin, Dai Shou-Yu, Chen Zheng-Hao.Rectifying characteristics of La0.9Sr0.1MnO3/Si p-n diodes. Acta Physica Sinica, 2005, 54(5): 2342-2345.doi:10.7498/aps.54.2342 |
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Li Wen-Jie, Jiang Jin-Long, Gai Zheng, Zhao Ru-Guang, Yang Wei-Sheng.Study of In/Si stable surfaces by LEED. Acta Physica Sinica, 2004, 53(2): 521-526.doi:10.7498/aps.53.521 |
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Jiang Jin-Long, Li Wen-Jie, Zhou Li, Zhao Ru-Guang, Yang Wei-Sheng.Investigation of stable high-index silicon surfacesby means of LEED pattern analysis. Acta Physica Sinica, 2003, 52(1): 156-162.doi:10.7498/aps.52.156 |
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DAI YONG-BING, SHEN HE-SHENG, ZHANG ZHI-MING, HE XIAN-CHANG, HU XIAO-JUN, SUN FANG-HONG, XIN HAI-WEI.A MOLECULAR DYNAMICS SIMULATION OF DIAMOND/SILICON(001) INTERFACE. Acta Physica Sinica, 2001, 50(2): 244-250.doi:10.7498/aps.50.244 |
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SHU HUNG-DAR, LIN LAN-YING.HEAT TREATMENT OF INDIUM ANTIMONIDE. Acta Physica Sinica, 1966, 22(6): 698-707.doi:10.7498/aps.22.698 |
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SHAW NAN, LIU YI-HUAN.X-RAY MEASUREMENT OF THE THERMAL EXPANSION OF GERMANIUM, SILICON, INDIUM ANTIMONIDE AND GALLIUM ARSENIDE. Acta Physica Sinica, 1964, 20(8): 699-704.doi:10.7498/aps.20.699 |
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