| [1] |
Wu Fan-Fan, Ji Yi-Ru, Yang Wei, Zhang Guang-Yu.Experimental research progress of electronic band structure and low temperature transport based on molybdenum disulfide. Acta Physica Sinica, 2022, 71(12): 127306.doi:10.7498/aps.71.20220015 |
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Xu Jia-Ling, Jia Li-Yun, Liu Chao, Wu Quan, Zhao Ling-Jun, Ma Li, Hou Deng-Lu.Band structure of topological insulator Li(Na)AuS. Acta Physica Sinica, 2021, 70(2): 027101.doi:10.7498/aps.70.20200885 |
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Yang Wen, Song Jian-Jun, Ren Yuan, Zhang He-Ming.Band structure model of modified Ge for optical device application. Acta Physica Sinica, 2018, 67(19): 198502.doi:10.7498/aps.67.20181155 |
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Jin Feng, Zhang Zhen-Hua, Wang Cheng-Zhi, Deng Xiao-Qing, Fan Zhi-Qiang.Twisting effects on energy band structures and transmission behaviors of graphene nanoribbons. Acta Physica Sinica, 2013, 62(3): 036103.doi:10.7498/aps.62.036103 |
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Liu Zhu, Zhao Zhi-Fei, Guo Hao-Min, Wang Yu-Qi.Band structure and optical absorption in InAs/GaSb quantum well. Acta Physica Sinica, 2012, 61(21): 217303.doi:10.7498/aps.61.217303 |
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Sun Wei-Feng, Zheng Xiao-Xia.First-principles study of interface relaxation effects on interface structure, band structure and optical property of InAs/GaSb superlattices. Acta Physica Sinica, 2012, 61(11): 117301.doi:10.7498/aps.61.117301 |
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Gao Shang-Peng, Zhu Tong.Quasiparticle band structure calculation for SiC using self-consistent GW method. Acta Physica Sinica, 2012, 61(13): 137103.doi:10.7498/aps.61.137103 |
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Ma Jian-Li, Zhang He-Ming, Song Jian-Jun, Wang Guan-Yu, Wang Xiao-Yan.Energy band structure of uniaxial-strained silicon material on the (001) surface arbitrary orientation. Acta Physica Sinica, 2011, 60(2): 027101.doi:10.7498/aps.60.027101 |
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Lin Qi, Chen Yu-Hang, Wu Jian-Bao, Kong Zong-Min.Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons. Acta Physica Sinica, 2011, 60(9): 097103.doi:10.7498/aps.60.097103 |
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Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke.The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors. Acta Physica Sinica, 2011, 60(4): 047101.doi:10.7498/aps.60.047101 |
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Dong Hua-Feng, Wu Fu-Gen, Mu Zhong-Fei, Zhong Hui-Lin.Effect of basis configuration on acoustic band structure in two-dimensional complex phononic crystals. Acta Physica Sinica, 2010, 59(2): 754-758.doi:10.7498/aps.59.754 |
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Band structure of strained Si1-xGex. Acta Physica Sinica, 2009, 58(11): 7947-7951.doi:10.7498/aps.58.7947 |
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Wang Wei, Sun Jia-Fa, Liu Mei, Liu Su.First-principles calculations on the electronic band structure of β-Pyrochlore superconductors AOs2O6 (A=K,Rb,Cs). Acta Physica Sinica, 2009, 58(8): 5632-5639.doi:10.7498/aps.58.5632 |
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Liu Hong, Yin Hai-Jian, Xia Shu-Ning.Electrical properties of the deformed carbon nanotube field-effect transistors. Acta Physica Sinica, 2009, 58(12): 8489-8500.doi:10.7498/aps.58.8489 |
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Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi.Band structure of strained Si/(111)Si1-xGex: a first principles investigation. Acta Physica Sinica, 2008, 57(9): 5918-5922.doi:10.7498/aps.57.5918 |
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Shao Ming-Zhu, Luo Shi-Yu.The sine-squared potential and the band structure for channelling effects. Acta Physica Sinica, 2007, 56(6): 3407-3410.doi:10.7498/aps.56.3407 |
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Wu Yun-Wen, Hai Wen-Hua, Cai Li-Hua.Energy band structure of two ions in a one-dimensional Paul trap. Acta Physica Sinica, 2006, 55(2): 583-589.doi:10.7498/aps.55.583 |
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Chen De-Yan, Lü Tie-Yu, Huang Mei-Chun.GW quasiparticle band structure of BaSe. Acta Physica Sinica, 2006, 55(7): 3597-3600.doi:10.7498/aps.55.3597 |
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Yu Wei, Zhang Li, Wang Bao-Zhu, Lu Wan-Bing, Wang Li-Wei, Fu Guang-Sheng.Hydrogen bonding configurations and energy band structures of hydrogenated nanocrystalline silicon films. Acta Physica Sinica, 2006, 55(4): 1936-1941.doi:10.7498/aps.55.1936 |
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Li Shu-Ping, Wang Ren-Zhi.Average-bond-energy method in Schottky barrier height calculation. Acta Physica Sinica, 2003, 52(3): 542-546.doi:10.7498/aps.52.542 |
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